III-V族化合物半導体原子層ドーピングを利用した高移動度トランジスタの研究

• Project/Area Number: 01750266
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Kobe University
• Principal Investigator: 小川 真人 神戸大学, 工学部, 助手
• Project Period (FY): 1989
• Project Status: Completed (Fiscal Year 1989)
• Budget Amount: ¥900,000 (Direct Cost: ¥900,000); Fiscal Year 1989: ¥900,000 (Direct Cost: ¥900,000)