暗減衰過渡分光法による高抵抗非晶質シリコン系半導体の局在準位分布の決定

• Project/Area Number: 01750271
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Osaka Prefecture University
• Principal Investigator: 秋田 成司 大阪府立大学, 工学部, 助手
• Project Period (FY): 1989
• Project Status: Completed (Fiscal Year 1989)
• Budget Amount: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 1989: ¥800,000 (Direct Cost: ¥800,000)