走査型トンネル電子分光による金属-半導体界面の形成過程の研究

• Project/Area Number: 01750654
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Physical properties of metals
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 富取 正彦 東京工業大学, 総合理工学研究科, 助手
• Project Period (FY): 1989
• Project Status: Completed (Fiscal Year 1989)
• Budget Amount: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 1989: ¥800,000 (Direct Cost: ¥800,000)