| Project/Area Number | 02555181 |
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
高分子物性・高分子材料（含機械材料）
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| Research Institution | Tohoku University |
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Principal Investigator |
MATSUDA Minoru Institute for Chemical Reaction Science Tohoku University, Professor, 反応化学研究所, 教授 (90006297)
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| Co-Investigator(Kenkyū-buntansha) |
ITO Seiki ibid., Member of Research Staff, 横浜研究所, 研究員
ONO Hiroshi ibid., Team Reader of R & D Group, 横浜研究所, 主席研究員
HIGASHI Hiromi Chisso Corp., Group Reader, 横浜研究所, グループリーダー
WATANABE Akira Institute for Chemical Reaction Science Tohoku University, Research Associate, 反応化学研究所, 助手 (40182901)
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| Project Period (FY) |
1990 – 1992
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| Project Status |
Completed(Fiscal Year 1991)
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| Budget Amount *help |
¥8,200,000 (Direct Cost : ¥8,200,000)
Fiscal Year 1991 : ¥1,200,000 (Direct Cost : ¥1,200,000)
Fiscal Year 1990 : ¥7,000,000 (Direct Cost : ¥7,000,000)
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| Keywords | Resist Polymers / Polysulfones / EB Resists / Photo Resists / O_2 RIE / Si-containing Polymers / ケイ素ポリマ- / 耐ドライエッチング |
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| Research Abstract |
Soluble 1 : 1 alternating copolymers of p-trimethylsilylstyrene (1) and p-pentamethyldisilylstyrene (2) with sulfur dioxide have been synthesized by free-radical copolymerization at T < -50ﾟC. Both coplymes had very high molecular weights and exhibited good film-forming properties. Their thermal stability in nitrogen (5 % wt loss) was ca. 210-230ﾟC. The etch rate under O_2 RIE conditions (15 mTorr O_2, -400 V) was 3.4 and 2.5 nm/min, and their electron beam sensitivity was 3 and 6mu C/cm^2 at 20 and 50 kV, respectively, using a 40/60 v/v toluene/2-propanol solution as the developer. 200-nm-pitch gratings for advanced optoelectronic devices were fabricated n various planarizing materials and InP using poly (1 sulfone)(P1S) sa a top imaging layer.
Photodegradation and electron-beam-induced degradation of poly[(pentamethyldisilyl) styrene sulfone]s were investigated by flash and pulse radiolysis techniques. The transient absorption spectra obtained by the flash photolysis for the solution
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of nonalternationg poly[(pentamethyldisilyl) styrene sulfone]s in THF (tetrahydrofuran) showed the formation of benzyl radical as a transient intermediate. On the other hand, the transient absorption spectra for an alternating poly[(pentamethyldisilyl) styrene sulfone] did not show the absorption of benzyl radical but showed that of p-(pentamethyldisilyl) styrenemonomer. The decay curve for an alternating poly[(pentamethyldisilyl) styrene sulfone] exhibited fast depropagation after the under electron-beam irradiation. The transient absorption spectra of a radical anion of the sulfonyl group was observed by pulse radiolysis for the solution of poly[(pentamethyldisilyl) styrene sulfone]s in THF.
Poly (P-tert-butylstyrene), poly (p-tert-butylstyrene sulfone), poly (p-trimethylsilylstyrene), and poly (p-trimethylsilylstyrene sulfone) films were ablated with a 248nm excimer laser. Emission Spectra of decomposed species such as Si atom and C_2 as well as CN molecules were observed, while no information of S atom was obtained. The effects of contained Si and S atoms upon laser ablation were examined, and the ablation mechanism was discussed. Less
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