The phase diagrams of the CdS-CdSe-CdTe pseudoternary system at 708ﾟC, 758ﾟC and 808ﾟC
Grant-in-Aid for General Scientific Research (C)
|Allocation Type||Single-year Grants|
|Research Institution||Waseda University|
KATO Eiichi Waseda University, Department of Material Science and Engineering, Professor, 理工学部, 教授 (30063233)
加藤 栄一 早稲田大学, 理工学部, 教授
|Project Period (FY)
1990 – 1991
Completed(Fiscal Year 1991)
|Budget Amount *help
¥2,100,000 (Direct Cost : ¥2,100,000)
Fiscal Year 1991 : ¥400,000 (Direct Cost : ¥400,000)
Fiscal Year 1990 : ¥1,700,000 (Direct Cost : ¥1,700,000)
|Keywords||Phase Diagram / X-Ray diffraction / Mass spectorometry / II-VI Compound Semiconductors / Lattice constant|
The phase diagrams of the CdS-CdSe-CdTe pseudoternary system at 708ﾟC, 758ﾟC and 808ﾟC were investigated by X-ray diffraction measurement.
The samples were annealed at each temperatures for 1000 hours and quenched.
zincblende type single-phase region, wurtzite single-phase region and two two-phase regions exist.
At 758ﾟC and 708ﾟC
zincblend type single-phase region, wurtzite type single-phase region and a two-phase region exist.
And an isothermal evaporation method by means of a Knudsen cell-mass spectrometer combination has been applied to the determination of the phase boundary of the CdS rich side in the CdS-CdSe-CdTe system at the temperature of 688ﾟC.
The phase boundary was determined by measuring the change of ion intensities as a function of composition.
Research Output (4results)