反応性スパッタリング法による薄膜作製時のグロー放電計測と窒化物薄膜の物性制御

• Project/Area Number: 02750555
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 金属材料(含表面処理・腐食防食)
• Research Institution: Himeji Institute of Technology
• Principal Investigator: 井上 尚三 姫路工業大学, 工学部, 助手
• Project Period (FY): 1990
• Project Status: Completed (Fiscal Year 1990)
• Budget Amount: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 1990: ¥800,000 (Direct Cost: ¥800,000)