超高真空STM/STSによる化合物半導体表面の内因性欠陥の研究

• Project/Area Number: 02855163
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Physical properties of metals
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 富取 正彦 東京工業大学, 総合理工学研究科, 助手
• Project Period (FY): 1990
• Project Status: Completed (Fiscal Year 1990)
• Budget Amount: ¥600,000 (Direct Cost: ¥600,000); Fiscal Year 1990: ¥600,000 (Direct Cost: ¥600,000)