| Project/Area Number | 03555058 |
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Toyama university |
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Principal Investigator |
TAKAHASHI Takakazu Toyama university, Faculty of Engineering, Research Associate, 工学部, 助手 (80019223)
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| Co-Investigator(Kenkyū-buntansha) |
HIRATA Toyoaki Osaka Vacuum Company, Manager, 開発本部, 開発課長代理
IKEDA Nagayasu Toyama university, Faculty of Engineering Professor, 工学部, 教授 (10222895)
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| Project Period (FY) |
1991 – 1992
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| Project Status |
Completed(Fiscal Year 1992)
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| Budget Amount *help |
¥11,900,000 (Direct Cost : ¥11,900,000)
Fiscal Year 1992 : ¥3,000,000 (Direct Cost : ¥3,000,000)
Fiscal Year 1991 : ¥8,900,000 (Direct Cost : ¥8,900,000)
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| Keywords | Toroidal plasma / Plasma-free / Sputtering apparatus / Thin films / Semiconductor electrode materials / Denseness and homogeneity / Electromigration / Stressmigration / プラズマフリ- / エレクトロマイグレ-ション / ストレスマイグレ-ション |
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| Research Abstract |
A New type of sputtering method which can form a stable toroidal plasma has been developed in order to prepare Al films with homogeneous and dense structure and excellent properties on the plasma-free substrates.
A toroidal plasma (TP) sputtering apparatus with a pair of targets has been developed in order to deposit the multilayers. The magnetic field was induced by the NdFeB permanent magnet.
At first, dc discharge and sputtering characteristics were investigated by using a planar ring target of Al with a purity of 99.999%. Ar gas was used as a sputtering gas. In the case of the permanent magnet attached behind the target, the applied voltage was lower to 300V at Ar gas pressure of 0.5mTorr.
The structure and the properties of Al films have been investigated. In the films with the thickness below 0.5 mum, the film surface was extremely smooth and its reflectivity was reached to 90%. The as-deposited films were composed of fcc phase crystallites with Al (111), Al (200) and Al (200) planes normal to the film plane.
The resistivity of the as-deposited films decreased from 5 to 2.5 muOMEGA.cm with increasing the film thickness from 0.07 to 1 mum. On the other hand, that increased from 2.5 to 5 muOMEGA.cm with increasing the Ar gas pressure from 0.5 to 10mTorr.
Accordingly, this method may be useful for depositing the aluminum with a smmoth Accordingly, this method may be useful for depositing the aluminum with a smooth and flat surface and homogeneous and dense structure.
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