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Investigation and control of a directional atomic flow induced by a high density electron current in an ultra fine metalic interconnection

Research Project

Project/Area Number 03555061
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

SHINGUBARA Shoso  Hiroshima University, Electrical Engineering, Associate Professor, 工学部, 助教授 (10231367)

Co-Investigator(Kenkyū-buntansha) KANEKO Hisashi  Toshiba, ULSI Research Center, Senior Researcher, ULSI研究所, 主任研究員
SAKAUE Hiroyuki  Hiroshima University, Electrical Engineering, Research Associate, 工学部, 助手 (50221263)
SHINDO Haruo  Fukuyama University, Engineering, Associate Professor, 工学部, 助教授 (20034407)
HORIIKE Yasuhiro  Tokyo University, Electrical Engineering, Professor, 工学部, 教授 (20209274)
Project Period (FY) 1991 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥15,900,000 (Direct Cost: ¥15,900,000)
Fiscal Year 1993: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1992: ¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 1991: ¥8,500,000 (Direct Cost: ¥8,500,000)
Keywordselctromigration / void / molecular dynamics simulation / sustained self-sputtering / ECR sputtering / in-situ SEM observation / grain boundary / alloy precipitation / ECRスパッタ / 抵抗振動 / マグネトロンスパッタ / 分子動力学計算 / ボイド移動 / 結晶粒界拡散 / コンタクト埋め込み / STM / エレクトロマイグレ-ション / マイクロ波プラズマ / 金属薄膜 / CuAl合金 / 表面拡散 / アルミニウム / スパッタリング
Research Abstract

Directional atomic flow which is caused by a momentum exchange by eletron collision is called electromigration. Observable electromigration related phenomena are macroscopic statitical ones which causes a severe reliability problem in narrow metallic interconnections. The aims of the present work are to understand the mechanisms of the elctromigration related phenomena from atomistic point of view, and to controll thin film structures for improving life time against electromigration induced failures. We have carried out in-situ observation of electromigration of A1-2%Cu interconections, and found that AlCu alloy precipitates moved to anode direction and these precipitates becames to be origines of void formations. We also found nonlinear oscillation of the resistance induced by a direct current electromigration for the first time. They are considered to come from annihilation and formation of voids or vacancies, and certainly are sign of the early stage of the failures. We investigated two new methods of physical vapor depositions ; ECR sputtering at high magnetic field, and sustained self sputtering. The former is operated at the newly observed electron cyclotron resonance at 2 times higher magnetic field, and enables a highly ionized sputtering. We have succeeded in filling of Al into a lateral trench by this methods and established a methods to form highly reliable via holes. The latter one efficient to eliminate any gaseous contamination in a film since sputtering plasma is maintained only by metal ions. We have confilrmed Ar inclusion is negligible, and obtained epitaxial Cu (110) film of Si (100) substrate by this method. Thus, new methods for improving electromigration life time in thin film interconnections are proposed, and important progress for basic understanding of electromigration are made.

Report

(4 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • 1991 Annual Research Report
  • Research Products

    (41 results)

All Other

All Publications (41 results)

  • [Publications] K.Fujiki,A.Sano,K.Inoue,H.Sakaue,S.Shingubara and Y.Horiike: "Resistance Oscillations Induced by a Direct Current Electromigration" Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials. 922-924 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 新宮原正三、宇都宮勇夫、藤井泰三: "アルミニウム配線中のボイドのエレクトロマイグレーション挙動の分子動力学シミュレーション" 電気情報通信学会論文誌. J78-CII. 294-304 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara,I.Utsunomiya and T.Takahagi: "Interaction of a Void and a Grain Boundary under a High Electric Current Stress Employing Three Dimensional Molecular Dynamics Simulation" Applied Surface Science. (accepted for publication).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara,T.Fujii,I.Utsunomiya,and Y.Horiike: "Three Dimensional Molecular Dynamics Study of Void Electromigration in a Strained Bicrystal with a Grain Boundary" Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. 186-188 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara,N.Morimoto,I.Utsunomiya,H.Shindo,and Y.Horiike: "Sputtering of TiN/Ti Films into Submicron Contact Holes Employing ECR Sputtering with High Magnetic Field" The Electrochemical Sciety Proceedings. 96-25. 246-255 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara,T.Fujii,and Y.Horiike: "Molecular Dynamics Study of Void Movement due to Electromigration" The Electrochemical Society Proceedings. 93-6. 263-270 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Morimoto,S.Takehiro,Y.Matsui,I.Utsunomiya,H.Shindo,S.Shingubara,and Y.Horiike.: "Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field" Mat.Res.Soc.Conf.Proc.ULSI-VIII. 257-266 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Morimoto,S.Takehiro,Y.Matsui,I.Utsunomiya,H.Shindo,S.Shingubara,and Y.Horiike.: "Vertical and Lateral Hole Aluminum Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field" Appl.Phys.Lett. 63. 737-739 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara,Y.Nakasaki,and H.Kaneko.: "Electromigration in a Single Crystalline Submicron Width Aluminum Interconnection" Appl.Phys.Lett.58. 42-44 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara,H.Kaneko,and M.Saitoh.: "Electromigration-Induced Abrupt Changes in Electrical Resistance Associated with Void Dynamics in Aluminum Interconnections" J.Appl.Phys.69. 207-212 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Takehiro,N.Yamanaka,H.Shindo,S.Shingubara,and Y.Horiike: "Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field" Jpn.J.Appl.Phys.30. 3657-3661 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Kawanoue,H.Kaneko,M.Hasunuma,and M.Moyauchi: "Electromigration-induced Void Growth in Bamboo Structures" J.Appl.Phys.74. 4423-4429 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Takehiro,N.Yamanaka,H.Shindo,S.Shingubara,and Y.Horiike.: "Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 129-131 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara,H.Nishida,A.Fukukawa,H.Sakaue,and Y.Horiike.: "Observation of a Copper-Aluminum Precipitate Electromigration in a Submicron Width Aluminum Interconnection"" Proc.of 1991 VLSI Multilevel Interconnection Conference. 265-271 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Morimoto,S.Takehiro,Y.Matsui,I.Utsunomiya,H.Shindo,S.Shingubara,and Y.Horiike.: "Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field"" Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.96-98 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, K.Fujiki, A.Sano, K.Inoue, H.Sakaue, and Y.Horiike: "Resistance Oscillations Induced by a Direct Current Electromigration" Jpn.J.Appl.Phys.vol.34. 1030-1036 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, I.Utsunomiya, and T.Takahagi: "Interaction of a Void and a Grain Boundary under a High Electric Current Stress Employing Three Dimensional Molecular Dynamics Simulation" Applied Surface Science accepted for publication. (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Shoso Shingubara: "Migration Problems in Submicron Metal Interconnections" Trans.Mat.Res.Soc.Jpn.vol.14B. 1317-1322 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, A.Sano, I.Utsunomiya, Y.Horiike, Z.J.Radzimski, W.N.Posadowski.: "Sustained Self-Sputtering of Copper Film Employing DC Magnetron Source" Advanced Metallization for ULSI Applications 1993, MRS Conference Proceedings. 87-94 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, H.Nishida, H.Sakaue and Y.Horiike: "Electromigration Characteristics of Cu-Al Precipitate in AlCu Interconnection" Jpn.J.Appl.Phys.vol.33. 3860-3863 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, K.Fujiki, A.Sano, H.Sakaue and Y.Horiike: "Electromigration Characteristics of Cu and Al Interconnections" Mater.Res.Soc.Symp.Proc.vol.338. 441-451 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, I.Utsunomiya and Y.Horiike: "Simulation of Void Dynamics Caused by Atom Migration Under High Electric Current and Stress in Metal Interconnections" Proc.of 1994 VMIC Conference. 518-520

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Morimoto, S.Takehiro, Y.Matsui, I.Utsunomiya, H.Shindo, S.Shingubara, and Y.Horiike.: "Vertical and Lateral Hole Aluminum Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field" Appl.Phys.Lett.vol.63. 737-739 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Morimoto.S.Takehiro, Y.Matsui, I.Utsunomiya, H.Shindo, S.Shingubara, and Y.Horiike.: "Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field" Mat.Res.Soc.Conf.Proc.ULSI-VIII. 257-266 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Kawanoue, H.Kaneko, M.Hasunuma, and M.Moyauchi: "Electromigration-induced Void Growth in Bamboo Structures" J.Appl.Phys.vol.74. 4423-4429 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, T.Fujii, I.Utsunomiya, and Y.Horiike: "Three Dimensional Molecular Dynamics Study of Void Electromigraion in a Strained Bicrystal with a Grain Boundary" Extended Abstracts of the Conference on Solid State Devices and Materials. 186-188 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, Y.Nakasaki, and H.Kaneko: "Electromigration in a Single Crystalline Submicron Width Aluminum Interconnection" Appl.Phys.Lett.vol.58. 42-44 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Shingubara, H.Kaneko, and M.Saitoh: "Electromigration-Induced Abrupt Changes in Electrical Resistance Associated with Void Dynamics in Aluminum Interconnections" J.Appl.Phys.vol.69. 207-212 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Takehiro, N.Yamanaka, H.Shindo, S.Shingubara, and Y.Horiike: "Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field" Jpn.J.Appl.Phys.vol.12B. 3657-3661 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Morimoto: "Vertical and Lateral Hole Aluminum Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field" Appl.Phys.Lett.63. 737-739 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] N.Morimoto: "Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field" Mat.Res.Soc.Conf.Proc.ULSI-VIII. ULSI-VIII. 257-266 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Shingubara: "Three Dimensional Molecular Dynamics Study of Void Electromigration in a Strained Bicrystal with a Grain Boundary" Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. 186-188 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Shingubara: "Molecular Dynamics Study of Void Movement due to Electromigration" Proc.of the 3rd Int.Symp.on Process Physics and Modelling in Semiconductor Technology,ECS. 93-6. 263-270 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Shingubara: "Sputtering of TiN/Ti Films into Submicron Contact Holes Employing ECR Sputtering with High Magnetic Field" Proc.ECS Symp.,Reliability for Semiconductor Devices,Interconnects,and Thin Insulator Materials. 93-25. 246-255 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Shingubara: "Sustained Self-Sputtering of Copper Film Employing DC Magnetron Source" Proc.MRS,Advanced Metallization for ULSI Applications 1993. 87-94 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] N.Morimoto,S,Takahiro,Y.Matsui,I,Utsuniomiya,H.Shindo,S.Shingubara,and Y.Horiike: "Submicron SiO_2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field" Extended Abstracts of the 1992 International Conference on Solid State devices and Materials. 96-98 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Shoso Shingubara, Taizo Fujii,and Y.Horiike: "Molecular Dynamics Study of Void Movement due to Electromigration --to be published" Abstracts of 183rd Meeting of the Electrochemical Society,Inc.8

    • Related Report
      1992 Annual Research Report
  • [Publications] S.Shingubara,N.morimoto,S.Takehiro,H.shindo,and Y.Horiike: "Submicron Hole Filling Characteristics Employing ECR Sputtering with High Magnetic Field --being published--" Proceedings of the Advanced Metallization for ULSI Applications 1992. 10

    • Related Report
      1992 Annual Research Report
  • [Publications] S Takehiro;S Shingubara;N Yamanaka;Y Horiike;H Shindo: "Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field" Jpn.J.Appl.Phys.30. 3657-3661 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] S Shingubara;A Fukukawa;H Nishida;Y Horiike;H Sakaue: "Observation of a Copper-Aluminum Precipitate Electromigration in a Submicron Width Aluminum Interconnection" Proc.International IEEE VLSI Multilevel Interconnection Conference. 8. 265-271 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] S Takehiro;H Shindo;N Yamanaka;S Shingubara;A Narai;Y Horiike: "Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field" Extended Abstracts of 23rd Conference of Solid State Devices and Materials. 129-131 (1991)

    • Related Report
      1991 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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