重水素添加光CVD法による超高濃度・高品質Si薄膜の低温結晶成長

• Project/Area Number: 03750213
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 山田 明 東京工業大学, 工学部, 講師
• Project Period (FY): 1991
• Project Status: Completed (Fiscal Year 1991)
• Budget Amount: ¥900,000 (Direct Cost: ¥900,000); Fiscal Year 1991: ¥900,000 (Direct Cost: ¥900,000)