アモルファス半導体超格子のヘテロ界面構造と光電特性

• Project/Area Number: 03750677
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 化学工学
• Research Institution: The University of Tokyo
• Principal Investigator: 本間 格 東京大学, 工学部, 助手
• Project Period (FY): 1991
• Project Status: Completed (Fiscal Year 1991)
• Budget Amount: ¥900,000 (Direct Cost: ¥900,000); Fiscal Year 1991: ¥900,000 (Direct Cost: ¥900,000)