分子線エピタキシー法による金属/半導体ヘテロ接合の形成

• Project/Area Number: 03855051
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: The University of Tokyo
• Principal Investigator: 田中 雅明 東京大学, 工学部, 講師
• Project Period (FY): 1991
• Project Status: Completed (Fiscal Year 1991)
• Budget Amount: ¥900,000 (Direct Cost: ¥900,000); Fiscal Year 1991: ¥900,000 (Direct Cost: ¥900,000)