Grant-in-Aid for Developmental Scientific Research (B).
|Research Institution||Department of Physics, Gakushuin University|
OGAWA Tomoya Gakushuin Univ., Dept.of Phys., Professor, 理学部, 教授 (50080437)
南郷 脩史 ラトック, システム・エンジニャリング, 社長
坂井 一文 学習院大学, 理学部, 助手 (40205703)
楢岡 清威 学習院大学, 理学部, 客員研究員
馬 敏雅 学習院大学, 理学部, 客員研究員 (60255263)
雄山 泰直 学習院大学, 理学部, 助手 (20265573)
MA Minya Gakushuin Univ., Dept.of Phys., Guest Researcher
OYAMA Yasunao Gakushuin Univ., Dept.of Phys., Assistant
NARAOKA Kiyoiki Gakushuin Univ., Dept.of Phys., Guest Researcher
|Project Fiscal Year
1992 – 1994
Completed(Fiscal Year 1994)
|Budget Amount *help
¥17,900,000 (Direct Cost : ¥17,900,000)
Fiscal Year 1994 : ¥3,600,000 (Direct Cost : ¥3,600,000)
Fiscal Year 1993 : ¥6,000,000 (Direct Cost : ¥6,000,000)
Fiscal Year 1992 : ¥8,300,000 (Direct Cost : ¥8,300,000)
|Keywords||Si wafer / SIMOX / denuded zone / Cz-Si / intrinsic gettering / GaAs wafer / multi-quantum layr / diffraction of light / CZ-Siウエハ- / 析出酸化物微粒子の粒径 / 高温超伝導被膜の均質性 / 多重量子井戸構造積層膜 / 光の回折 / 面の粗さ / Interference Fringes / Diffraction / Surface Roughness / Integrated Circuits / Liquid Crystal Display / Device Technology / 干渉縞 / 超薄膜干渉縞 / 固体表面状態 / 半導体レーザー / チタン・サファイャー・レーザ|
A new fringe method was developed for characterization of "roughness" of inner layrs and interfaces in semiconductor devices because the roughness are very important for semiconductor technologies. Here, brightness and clearness, or visibility, of the fringe pattern are determined by scattering from the objects to be surveyed, because size and density of dots and spots which compose the fringes are proportional to size and density of particles and grains located at the interfaces or roughness on the layrs while their scattered intensities are dependent upon refractive index difference between matrix and the objects.
(1) A SIMOX wafer is prepared by proper heat treatments from a silicon wafer showered by heavy but homogeneous implantation of oxygen ions, and thus a thin and flat oxide layr is generated in the wafer. The layr is made of fine oxide particles which efficiently act as light scatterers. The fringe patterns obtained by SIMOX wafers are usually bright and clear with fine dots w
hich inform us the layr is a homogeneous assemble of fine oxide particles.
(2) when denuded zone and oxide particles for intrinsic gettering (IG) are generated in a CZ-Si wafer after application of proper heat treatments to the wafer, an interface between the zone and the IG region is clearly observed by this fringe method. Oxide particles located near the interface are quantitatively measured, which is very important for planar circuits on the wafer.
(3) Optical quality of multi-layrs with quantum well structure was comprehensively checked by this fringe method because this fringe pattern will be observed only when any optical inhomogeneity is present in the layrs grown on substrate.
(4) Since etch pits and steps on crystal faces indicate crystallographic anisotropy, the light intensities scattered by the pits and steps are dependent upon the direction of incident light against their crystallographic orientations, which has been clearly observed by some GaAs wafers.
To measure "roughness" of inner layrs or interfaces which are unable to measure before this fringe method, a new method has been developed here, which is, of course, governed by an electronic system. Less