化合物半導体-絶縁体界面の光励起プラズモンに関する研究

• Project/Area Number: 04750251
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子材料工学
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: 市村 正也 名古屋工業大学, 工学部, 助手
• Project Period (FY): 1992
• Project Status: Completed (Fiscal Year 1992)
• Budget Amount: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 1992: ¥800,000 (Direct Cost: ¥800,000)