原子レベルで平坦なシリコン表面の初期酸化過程のX線光電子分光法による解明

• Project/Area Number: 04855005
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Applied materials
• Research Institution: Musashi Institute of Technology
• Principal Investigator: 野平 博司 武蔵工業大学, 助手
• Project Period (FY): 1992
• Project Status: Completed (Fiscal Year 1992)
• Budget Amount: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 1992: ¥1,000,000 (Direct Cost: ¥1,000,000)