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Physics.Crystal Structure of Heavily Doped GaAs and In GaAs

Research Project

Project/Area Number05044087
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research InstitutionTOKYO Institute of Technology

Principal Investigator

TAKAHASHI Kiyoshi  Tokyo Institute of Technology, Profrssor, 工学部, 教授 (10016313)

Co-Investigator(Kenkyū-buntansha) HANEMAN Dan  New South Wales University, Professor, 物理学部, 教授
WEBER Eicke  University of California Berkeley, Professor, 材料科学, 教授
NOZAKI Shinji  University of Electro-Communications, Associate Professor, 電気通信学部, 助教授 (20237837)
MORISAKI Hiroshi  University of Electro-Communications, Professor, 電気通信学部, 教授 (00029167)
KONAGAI Makoto  Tokyo Institute of Technology, Professor, 工学部, 教授 (40111653)
Project Period (FY) 1993 – 1994
Project Status Completed(Fiscal Year 1994)
Budget Amount *help
¥7,000,000 (Direct Cost : ¥7,000,000)
Fiscal Year 1994 : ¥3,500,000 (Direct Cost : ¥3,500,000)
Fiscal Year 1993 : ¥3,500,000 (Direct Cost : ¥3,500,000)
KeywordsMOMBE / Carbon-doping / GaAs / InGaAs / thermal stability / 熱安定性
Research Abstract

Heavily carbon-doped GaAs (C-GaAs) was grown by metalorganic molecular beam epitaxy (MOMBE), and the material properties of the as-grown and annealed C-GaAs were mainly studied by transmission electron microscopy (TEM), photoluminescence (PL), electroluminescence (EL), X-ray diffraction, and Hall measurements. In the as-grown sample, carbon is electrically active as an acceptor, and the hole concentration as high as 10^<21>cm^<-3> was obtained. Because of a small size of a carbon atom, heavy carbon doping decreases the lattice constant and results in a misfit with that of a GaAs substrate. The tensile strain in a plane is found to be incompletely relaxd even with formation of misfit dislocations.
Annealing of C-GaAs at high temperature was found to reduce the hole concentration and increases the lattice constant. The detailed TEM analysis revealed carbon precipitates and an increased number of misfit dislocations. We proposed a model to explain a decrease of the hole concentration as fo … More llows. In the early stage of annealing, the residual strain is further relaxd by formation of misfit dislocations. In the later stage, the carbon atoms at arsenic slowly move to the interstitial sites and form precipitates. Since the diffusivity of carbon in GaAs is extremely small, this process is slow. The movement of carbon atoms from the arsenic sites results in a decrease of the hole concentration. It also increases the lattice constant. However, the formed misfit dislocations have already relaxd the tensile strain which resulted from the lattice mismatch between C-GaAs and GaAs substrate. Therefore, the already-formed misfit dislocations must be canceled. For this purpose, more misfit dislocations with the Burgers vector opposite to those of the already-formed misfit dislocations are formed.
The above model well explains the TEM and XRD results. Electrominescence was observed from C-GaAs before and after the anneal, and the origin of EL was attributed to the misfit dislocations. This study helps us understand thermal instability of heavily C-doped GaAs. Less

Report

(2results)
  • 1994 Final Research Report Summary
  • 1993 Annual Research Report

Research Products

(19results)

All Other

All Publications

  • [Publications] S.X.Tina: "Electroluminescence from carbon-doped GaAs junctions with semi-insulating GaAs" Applied Physics Letters. (印刷中). (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Sohn: "Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metaloganic molecular beam epitaxy after annealing" Applied Physics Letters. (印刷中). (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Nagao: "Low-temperature growth of heavily carbon-doped GaAs by metalorganic molecular beam epitaxy with elemental gallium" Japanese Journal of Applied Physics. 33. 6090-6094 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Takahashi: "From intelligent sensors to fuzzy sensors" Sensors and Actuators A. 40. 89-91 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nozaki: "Research activities on intelligent materials in Japan" Proceedings of the 2nd International Conference on Intelligent Materials. 1230-1241 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nozaki: "Ambient Scanning tunneling microscopy and atomic force microscopy on GaAs (100) treated with (NH_4)_2S_X and SeS_2 solutions" Journal of Vacuum Science and Technology B. (印刷中). (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.X.Tina: "Electroluminescence from carbon-doped GaAS junctions with semi-insulating GaAs" Applied Physics letters. (to be published). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Sohn: "Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing" Applied Physics Letters. to be published. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Nagao: "Low-temperature growth of heavily carbon-doped GaAs by metalorganic molecular beam epitaxy with elemental gallium" Japanese Journal of Applied Physics. 33. 6090-6094 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Takahashi: "From intelligent sensors to fuzzy sensors" Sensors and Actuators A. 40. 89-91 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nozaki: "Research activities on intelligent materials in Japan" Proceedings of the 2nd International Conference on Intelligent Materials. 1230-1241 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nozaki: "Ambient Scanning tunneling microscopy and atomic force microscopy on GaAs (100) treated with (NH_4)_2S_X and SeS_2 solutions" Journal of Vacuum Science and Technology B. to be published. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Takahashi M.Konagai: "Low-temperature epitaxial growth of undoped and n-doped si by photochemical vapor deposition using SiH4/SiH2C12/H2PH3 mixtures" Thin Solid Films. 237. 98-104 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Takahashi M.Konagai: "Low-temperature Si epitaxy by photochemical vapor deposition with SiH2C12" Jnp.J.Appl.Phys.33. 153-155 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Dan Haneman: "Possible quantum effects in amorphous silicon doble schottky diodes" Phys.Rev.B. 45. 1261-1267 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Nozaki K.Takahashi: "Design of futrue electron devices with intelligent materials" J. Int. Material Syst. and Struct.5. 136-140 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Nozaki: "Study on thermal stability of carbon-doped GaAs using novel metalorganic molecular beam epitaxial structures" Appl.Phys.Lett.62. 176-178 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] H.Morisaki: "Strong blue light emission from oxygen-containing Si fine structure" J.Appl.Phys.74. 1014-1017 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 高橋 清: "光励起プロセスの基礎" 工業調査会, 266 (1994)

    • Related Report
      1993 Annual Research Report

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Published : 1993-04-01   Modified : 2016-04-21  

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