Grant-in-Aid for General Scientific Research (A)
|Allocation Type||Single-year Grants|
|Research Institution||KYOTO UNIVERSITY|
ISHIKAWA Junzo Kyoto Univ., Graduate School of Engineering, Professor, 工学研究科, 教授 (80026278)
GOTOH Yasuhito Kyoto Univ., Graduate School of Engineering, Res.Ass., 工学研究科, 助手 (00225666)
TSUJI Hiroshi Kyoto Univ., Graduate School of Engineering, Res.Ass., 工学研究科, 助手 (20127103)
|Project Period (FY)
1993 – 1995
Completed(Fiscal Year 1995)
|Budget Amount *help
¥30,000,000 (Direct Cost : ¥30,000,000)
Fiscal Year 1995 : ¥5,200,000 (Direct Cost : ¥5,200,000)
Fiscal Year 1994 : ¥7,800,000 (Direct Cost : ¥7,800,000)
Fiscal Year 1993 : ¥17,000,000 (Direct Cost : ¥17,000,000)
|Keywords||Nagative-ion source / Negative-ion implantation / Charged up / Insulator / Charge-up free / Particle-scattering / Electric double layr / Material modification / 負イオンビーム蒸着 / イオンビーム減速 / チャージアップ / 帯電緩和 / 低エネルギー / 負イオン / イオンビーム輸送 / 空間電荷中和 / 二次電子 / 二次負イオン生成|
1.Development of High-Current Negative-Ion Source and Negative-Ion implanter :
(1) We developed an intense RF plasma-sputter-type heavy negative-ion source (RFNIS) which can deliver high-current negative-ion beams in a dc-mode with an intensity of several mA of various elements required in the semiconductor fabrication, such as B,P,Si, and C.
(2) Besides, we also developed a medium-current type negative-ion implanter equipped a small-type RFNIS.of which clean booth makes to implant ions in the clean condition as well as in the real implantation process.
2.Investigation of Charging Phenomena of Substrates during Negative-Ion Implantation.
(1) We found that the charging voltage of isolated electrodes at negative-ion implantation was only several volts positive. This charging mechanism with a low voltage was revealed to result from returning of emitted electrons with a low energy. (2) We developed a new method to measure the charging voltage of insulator surface by the analysis of secondary e
lectron energy distribution and showed the charging potential of negative-ion implanted insulators was several volts negative. Besides, we proposed an electric double layr model as a low charging mechanism of insulators during negative-ion implantation.
3.Evaluation of Negative-Ion Implanted Devices
From the evaluation of test devices of gate oxide after negative-ion implanted, the negative-ion implantation was found to be applicable in the future ULSI fabrication with low charging.
4.Formation of This Film by a Low-Energy Negative-Ion Beam Deposition
We developed a negative-ion beam deposition system with a low energy in which a negative ion beam has a low energy spread of about 10eV.This system has a good energy controllability for the low energy beam of 30eV.Besides, the deposited a carbon film with a low carbon negative ions was found to be an amorphous diamond-like carbon film from XPS.
5.Development of Non-Scattering Implantation Method into Powders
We clarified the scattering phenomenon of powders during implantation by theoretically and experimentally with a positive ion implantation. On the contrary, even in the negative-ion implantation with an energy of 20keV,there was no scattering resulted. This shows the negative-ion implantation is non scattering implantation method. Less