Grant-in-Aid for Developmental Scientific Research (B).
|Research Institution||KYOTO UNIVERSITY|
ISHIKAWA Junzo Kyoto University, Electronics, Professor, 工学部, 教授 (80026278)
酒井 滋樹 日新電機(株), 研究開発本部, 研究員
松田 耕自 日新電機(株), 研究開発本部, 副本部長
GOTOH Yasuhito Kyoto University, Electronics, Assistant, 工学部, 助手 (00225666)
TSUJI Hiroshi Kyoto University, Electronics, Assistant, 工学部, 助手 (20127103)
MATSUDA Kouji Nissin Electric Co., Ltd., R&D Head Office, Vice-Head Director
SAKAI Shigeki Nissin Electric Co., Ltd., R&D Head Office, Researcher
|Project Fiscal Year
1993 – 1994
Completed(Fiscal Year 1994)
|Budget Amount *help
¥16,600,000 (Direct Cost : ¥16,600,000)
Fiscal Year 1994 : ¥3,800,000 (Direct Cost : ¥3,800,000)
Fiscal Year 1993 : ¥12,800,000 (Direct Cost : ¥12,800,000)
|Keywords||Negative-Ion Implantation / Charge-up / Reduction of Charging / Secondary Electron Emission Yield / Electron Energy Distribution / Negative-Ion Source / Negative-Ion Beam Transport / Gate Oxide Layr / 負イオン注入 / 負イオンビーム輸送 / チャージアップ / 二次電子エネルギー分布 / 二次電子放出比 / 帯電緩和 / 絶縁物 / ゲート酸化膜 / 負イオン / イオン注入 / 無帯電 / 帯電電位 / 負イオン源 / 二次負イオン生成|
This research has been accomplished with following results : (1) It was found that negative-ion implantation makes it remarkably low the charge-up voltage of the implanted surface, and (2) the large possibillity was obtained to put the negative-ion implantation to practical use in the LSI fabrication process and as a charge-up free ion implantation technique. Five main subjects of the research and obtained results are described as follows.
1.Development of High Current Negative Ion Source for Negative-Ion Implantation
RF plamsa-sputter-type heavy negative-ion source has been developed which was able to deliver several mA negative-ion current of boron, phosphorus and silicon elements desired in negative-ion implantation for the semiconductor fabrication process.
2.Development of the Mesuring System of Charg-up Potential of Insulators during Negative-Ion Implantation
The method for measuring charge-up potential of insulators during implantation has been developed by using secondary-electron-
energy analysis. Charge-up potential of negative-ion implantated insulators was revealed to be within only several volts of negative-polarity.
3.Analytical Research of Charging Mechanism in Negative-Ion Implantation
The charging mechanism of isolated electrode during negative-ion implantation has been revealed, where the charging voltage was determined by two factors of secondary-electron-emission yield and electron-energy distribution. As for the insulators, the charging mechanism of insulators is not made clear yet, but we have presented a model of electric-double-layr formed in near surface of insulator.
4.Development of Negative-Ion Beam Transport System for a Large Area Implantation
For negative-ion implanter, the beam transport system has been developed for a large silicon substrate of 6 inch in diameter.
5.Evaluation of Negative-Ion Implanted Device
The test devices (TEG : test element group) for testing gate oxide layr were implanted with negative-ion beam, and as a result, almost all devices performed well after the negative-ion implantation without any external apparatus for charge-up compensation. Less