Project/Area Number |
05558053
|
Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
|
Allocation Type | Single-year Grants |
Research Field |
プラズマ理工学
|
Research Institution | Tohoku University |
Principal Investigator |
SATO Noriyoshi Dept. of Elactronic Eng. Tohoku Univ., Professor, 工学部, 教授 (40005252)
|
Co-Investigator(Kenkyū-buntansha) |
NAKAGAWA Yukihito Res. and Develop. Anelva Corp., Chief, 研究開発本部, 主任
TSUKUDA Tsutomu Res. and Develop. Anelva Corp., Head, 研究開発本部, 部長
HATAKEYAMA Rikizo Dept. of Elactronic Eng. Tohoku Univ., Assis. Prof, 工学部, 助教授 (00108474)
IIZUKA Satoru Dept. of Elactronic Eng. Tohoku Univ., Assis. Prof, 工学部, 助教授 (20151227)
|
Project Period (FY) |
1993 – 1995
|
Project Status |
Completed (Fiscal Year 1995)
|
Budget Amount *help |
¥16,200,000 (Direct Cost: ¥16,200,000)
Fiscal Year 1995: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1994: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 1993: ¥11,000,000 (Direct Cost: ¥11,000,000)
|
Keywords | Large-diameter uniform plasma / ECR plasma / Slotted antenna / Plasma processing / Etching / Energy control / Radical control / Electron temperature control / 大口径プラズマ / ECRプラズマ / 均一プラズマ / マイクロ波 |
Research Abstract |
The results using plane slotted ECR (Electron Cyclotron Resonance) antenna are summarized as follows ; (1)A uniform plasma with a diameter larger than 45cm is easily produced by using a smaller slotted sntenna of 15cm in diameter. This has an advantage in a practical use. (2)The plasma density increases with the microwave power in the range of 1kW owing to the antenna water-cooling system. A new type the ECR antenna structure which can be placed outside the vacuum chamber is discussed and designed for the high power operation. (3)Good plasma uniformity is obtained even in reactive plasma with O_2, CF_4, and N_2. (4)The uniformities of the plasma processing such as photoresist ashing in O_2 plasma, polysilicon etching in SF_6 plasma, and silicon and silicon dioxide etchings in CF_4 plasma are obtained within 5% over 45cm in diameter. (6)A new method for controlling electron and ion energy distribution functions is developed for a qualified plasma processing with radical and ion-assist chemical reactions, respectively. The electron and ion temperatures are found to be varied by one order of magnitude.
|