| Project/Area Number |
06452140
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied physics, general
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| Research Institution | HIROSHIMA UNIVERSITY |
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Principal Investigator |
SASAKI Minoru HIROSHIMA UNIVERSITY,FACULTY OF SCIENCE ASSOCIATE PROFESSOR, 理学部, 助教授 (10116593)
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| Co-Investigator(Kenkyū-buntansha) |
NEGISHI Hiroshi HIROSHIMA UNIVERSITY,FACULTY OF SCIENCE RESEARCH ASSOCIATE, 理学部, 助手 (80164656)
INOUE Masasi HIROSHIMA UNIVERSITY,FACULTY OF SCIENCE PROFESSOR, 理学部, 教授 (10020223)
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| Project Period (FY) |
1994 – 1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥4,600,000 (Direct Cost: ¥4,600,000)
Fiscal Year 1995: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1994: ¥4,100,000 (Direct Cost: ¥4,100,000)
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| Keywords | Pulsed laser / Conduction carrier spectroscopy / High temperature superconductors / Transient thermoelectric effect / Dynamic transport properties |
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| Research Abstract |
Our newly developed technique is a "dynamical" one, called the pulsed-laser induced "Transient Thermoelectric Effect (TTE) " method, in which after a pulsed laser is irradiated upon one end of a sample, one measures an induced voltage across both ends of the sample and analyzes its decay profile, from which we can obtain valuable information about thermal diffusions of photo-generated carriers (and phonons) drifting along the concentration and temperature gradient in the sample. This technique is particularly useful for a multicarrier system consisting of both conduction electrons and holes, ---we refer to as "conduction-carrier spectroscopy". For a more general application of this technique, we are undertaking the TTE experiments under an applied magnetic field and under a steady flow of adc electric current to get further information about transport properties of various materials, such as high T_c oxide superconductors, semiconductors and quasi-two-dimensional molybdenum oxides that show a metal-semiconductor transition due to charge-density-wave instabilities. We have improved the hitherto-made TTE apparatus with the fixed laser wavelength of 1064 nm with a Nd : YAG to a variable range of 690-1320 nm using a combined laser source of Ti : Sapphire/Foresterite with the Nd : YAG source, a detectable time range from 50 ns down to as fast as 1 ns with a digital oscilloscope, and laser intensity reduced by one tenths of the previous one as well. With this improved apparatus we have obtained valuable information about the carrier generation/recombination processes in a p-type GaAs crystal, as a test sample, due to band-band and band-EL2 centers transitions. Computer simulation of the photogenerated carrier diffusion under an ambipolar internal field for n-type GaAs has also been performed to understand the TTE process.
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