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Development of blue-green semiconductor lasers by metalorganic vapor phase epitoxy

Research Project

Project/Area Number 06555006
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

FUJITA Shigeo  Graduate School of Engineering, Kyoto Univ, Professor, 工学研究科, 教授 (30026231)

Co-Investigator(Kenkyū-buntansha) KAWAKAMI Yoichi  Graduate School of Engineering, Kyoto Univ, Instructor, 工学研究科, 助手 (30214604)
FUJITA Shizyo  Graduate School of Engineering, Kyoto Univ, Associate Professor, 工学研究科, 助教授 (20135536)
Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 1995: ¥2,700,000 (Direct Cost: ¥2,700,000)
Keywordsphotocatalysis / hydrogen passivation / impurity doping / quanturn structure / rapid thermal annealing / 青緑半導体レーザ / 有機金属気相成長法 / ZnCdSe / p型ZnSe / 窒素添加 / 熱処理
Research Abstract

For the development of II-VI semiconductor laser grown by metalorganic vapor phase epitaxy (MOVPE) , novel structural control and doping techniques have been investigated. The results are summarized as follows ;
1.Photo-assisted MOVPE with alkyl-sources was proved to be the promising technology, where photo-generated carriers can assist the p-type doping.
2.Tertiarybutylamine was found to be the ptomising p-type doping precursor.
3.The maximum net acceptor concentration in p-type ZnSe was 5*10^<17>cm^<-3>, which was achieved by the post-growth thermal annealing.
4.Laser operation with double heterostructure could not be observed, because of unexpected interdiffusion during the annealing.
5.Metal/GaAs/ZnSe structures were proposed as a novel electrode configuration.
6.A guideline towards MOVPE-grown laser, i.e., source precursors, growth conditions, structures on p-type substrates, acceptor activation by rapid thermal annealing, etc., has been clearly identified.

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] 藤田静雄: "Thermal annealing on p-type conductivity of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy" Journal of Electronic Materials. 24. 137-141 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 藤田静雄: "Photoassisted growth of II-VI semiconductor films" Applied Surface Science. 86. 431-436 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 藤田茂夫: "Eletrical and optical properties of p-type ZnSe: N grown by MOVPE" Proc. Int. Symp. Blue Lase and Light Emitting Diodes. 176-179 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 藤田茂夫: "Effects of annealing atmosphere and temperature on acceptor activation in ZnSe: N grown by photo-assisted MOVPE" Journal of Crystal Growth. (発表予定).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Shizuo Fujita: "Thermal annealing on p-type conductivity of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy" Journal of Electronic Materials. Vol.24. 137-141 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Shizuo Fujita: "Photoassisted growth of II-VI semiconductor films" Applied Surface Science. Vol.86. 431-436 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Shigeo Fujita: "Electrical and optical properties of p-type ZnSe : N grown by MOVPE" Proc.Int.Symp.Blue Laser and Light Emitting Diodes. 176-179 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Shigeo Fujita: "Effects of annealing atmosphere and temperature on acceptor activation in ZnSe : N grown by photo-assisted MOVPE" Journal of Crystal Growth. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 藤田静雄: "Thermal annealing on p-type conductivity of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy" Journal of Electronic Materials. 24. 137-141 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 藤田静雄: "Photoassisted growth of II-VI semiconductor films" Applied Surface Science. 86. 431-436 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 藤田茂夫: "Electrical and optical properties of p-type ZnSe: N grown by MOVPE" Proc. Int. Symp. Blue Lase and Light Emitting Diodes. 176-179 (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] 藤田茂夫: "Effects of annealing atmosphere and temperature on acceptor activation in ZnSe: N grown by photo-assisted MOVPE" Journal of Crystal Growth. (発表予定).

    • Related Report
      1995 Annual Research Report
  • [Publications] Sg.Fujita: "MOVPE of p-ZnSe and p/n junction diodes" Journal of Crystal Growth. 145. 552-556 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Sg.Fujita: "Thermal annealing effects on p-type conductivity of nitrogen-doped ZnSe grown by MOVPE" Journal of Electronic Materials. (発表予定).

    • Related Report
      1994 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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