精密電子制御したシリコン系ナノ結晶の立体集積構造作成と光電子融合デバイス応用

• Project/Area Number: 06J08251
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 国内
• Research Field: Electronic materials/Electric materials
• Research Institution: Hiroshima University
• Principal Investigator: 牧原 克典 Hiroshima University, 大学院・先端物質科学研究科, 特別研究員(PD)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥3,300,000 (Direct Cost: ¥3,300,000); Fiscal Year 2008: ¥1,100,000 (Direct Cost: ¥1,100,000); Fiscal Year 2007: ¥1,100,000 (Direct Cost: ¥1,100,000); Fiscal Year 2006: ¥1,100,000 (Direct Cost: ¥1,100,000)
• Keywords: Si量子ドット / 金属ナノドット / 仕事関数制御 / AFM / ケルビンプローブ / 価電子制御 / デルタドーピング / 発光ダイオード

Research Abstract

本年度は,ナノドット形成メカニズム解明およびシリサイドナノドットとSi量子ドット積層構造フローティングゲートに着目し、下記3点に力点をおいて研究を推進した。
1.リモートプラズマ支援による金属ナノドット形成メカニズム
Si-OH終端した膜厚3.5nmのSiO_2膜上に、Arスパッタにより極薄Pt膜を形成し、外部加熱無で、Ar、H_2、ガスおよびそれらの混合ガスのリモートプラズマ(RP)処理を5分間施した。また、Pt箔で覆った熱電対をSi基板上に固定し、同条件でRP処理した際の表面温度を計測した。純Ar RP処理では、表面温度は約50℃であるのに対して、H_2を混合するとH_2濃度の増加に伴い、表面温度が顕著に増加し、純H_2 RP処理で、約500℃に達する。RP支援によるPtナノドットの形成は、Pt表面における原子状水素の再結合に起因した局所加熱によるPt原子の凝集であることが分かった。
2.高密度Si量子ドット/SiO2の核密度制御
p-Si(100)基板上に1000℃、2%O_2で膜厚〜3.6nmのSiO_2を形成後、0.1%HF処理によりSiO_2表面をOH終端し、その後、室温でHe希釈10%GeH_4に暴露した。圧力、暴露時間はそれぞれ0.2〜100Torr、1.0〜10minで変化させた。その後、同一チャンバー内でSi_2H_6-LPCVD(400℃)によりSi量子ドットを自己組織化形成した結果、GeH_4照射することにより、ドット密度が未照射のSiO_2上に比べ約40倍に増加した。Si_2H_6-LPCVD直前にOH終端した熱SiO_2表面に室温、100Torrで10min GeH_4を吸着させることで、面密度1.2×10^<13>cm^<-2>で均一サイズ(半値幅**nm)のSi量子ドットを形成できた。
3.NiSiドット/Si量子ドットハイブリドフローティングゲートMOSキャパシタにおける電荷注入特性
多段階電子注入および安定電荷保持の両立が期待できるNiSiドット/Si量子ドット積層ハイブリッドフローティングゲートMOSキャパシタにおいて、多数電子および正孔注入が反映して、最大印加ゲート電圧の増加に対して線形に増大することが分かった。また、パルスゲート電圧印加においては、電子注入レートが段階的に変化することからNiSiナノドットへの電子注入がSi量子ドットの離散化したエネルギー状態を反映することが明らかとなった。

Research Products

• [Journal Article] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics (2008)
  • Author(s): K. Makihara
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 3099-3102
  • Peer Reviewed
• [Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM (2008)
  • Author(s): K. Makihara
  • Journal Title: Institute of Electronics, Information and Communication Engineers Trans. on Electronics E91-C Pages: 712-715
  • Peer Reviewed
• [Journal Article] Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate (2008)
  • Author(s): T. Hosoi
  • Journal Title: Surface and Interface Analysis 40 Pages: 1126-1130
  • Peer Reviewed
• [Journal Article] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO_2 (2008)
  • Author(s): K. Makihara
  • Journal Title: Electrochemical Society Transaction 16 Pages: 255-260
  • Peer Reviewed
• [Journal Article] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics (2008)
  • Author(s): K. Makihara
  • Journal Title: Thin Solid Films 517 Pages: 306-308
  • Peer Reviewed
• [Journal Article] Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application (2008)
  • Author(s): S. Miyazaki
  • Journal Title: Thin Solid Films 517 Pages: 41-44
  • Peer Reviewed
• [Journal Article] Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH_4 (2008)
  • Author(s): T. Sakata
  • Journal Title: Thin Solid Films 517 Pages: 216-218
  • Peer Reviewed
• [Journal Article] Characterization of Chemical Bonding Features and Defect State Density in HfSiO_xN_y/SiO_2 Gate Stack (2007)
  • Author(s): A. Ohta
  • Journal Title: Microelectronic Engineering 84 Pages: 2386-2389
  • Peer Reviewed
• [Journal Article] High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH_4 + H_2 (2007)
  • Author(s): T. Sakata
  • Journal Title: Materials Science Forum 561-565 Pages: 1209-1212
  • Peer Reviewed
• [Journal Article] Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique (2007)
  • Author(s): R. Nishihara
  • Journal Title: Materials Science Forum 561-565 Pages: 1213-1216
  • Peer Reviewed
• [Journal Article] Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application (2007)
  • Author(s): S. Miyazaki
  • Journal Title: Electrochemical Society Transaction 11-6 Pages: 233-243
  • Peer Reviewed
• [Journal Article] Light Emitting, Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots (2007)
  • Author(s): J.Xu
  • Journal Title: Solid State Phenomena 121-123 Pages: 557-560
• [Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe (2006)
  • Author(s): K.Makihara
  • Journal Title: Thin Solid Films 508・1-2 Pages: 186-189
• [Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique (2006)
  • Author(s): J.Nishitani
  • Journal Title: Thin Solid Films. 508・1-2 Pages: 190-194
• [Journal Article] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories (2006)
  • Author(s): S.Miyazaki
  • Journal Title: Electrochemical Society Transaction 2・1 Pages: 157-164
• [Journal Article] Study of Charged states of Si Quantum Dots with Ge Core (2006)
  • Author(s): K.Makihara
  • Journal Title: Electrochemical Society Transaction 3・7 Pages: 257-262
• [Journal Article] Phosphorus Doping to Quantum Dots and Its Floating Gate Application (2006)
  • Author(s): K.Makihara
  • Journal Title: Abst of 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Pages: 135-138
• [Journal Article] Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique (2006)
  • Author(s): K.Makihara
  • Journal Title: Abst. of International Union Material Research Society (IUMRS) International Conference in Asia 2006. Pages: 82-82
• [Journal Article] Charging and Discharging Characteristics of P-doped Si Quantum Dots Floating Gate (2006)
  • Author(s): K.Makihara
  • Journal Title: Abst. of The 2006 International Meeting for Future of Electron Devices Pages: 67-68
• [Journal Article] Control of Electronic Charged States of Si-based Quantum Dots for Floating Gate Aplication (2006)
  • Author(s): S.Miyazaki
  • Journal Title: Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics Pages: 49-50
• [Journal Article] Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories (2006)
  • Author(s): S.Miyazaki
  • Journal Title: Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology Pages: 736-739
• [Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system (2009)
  • Author(s): M. Muraguchi
  • Organizer: 13th Advanced Heterostructures and Nanostructures Workshop
  • Place of Presentation: Hawaii, USA
• [Presentation] Capacitance measurements on quantum dots coupled to a two-dimensional electron system (2009)
  • Author(s): S. Nomura
  • Organizer: 13th Advanced Heterostructures and Nanostructures Workshop
  • Place of Presentation: Hawaii, USA
• [Presentation] Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO_2 (2009)
  • Author(s): A. Kawanami
  • Organizer: The 2^<nd> International Conference on Plasma-Nano Technolo2v & Science
  • Place of Presentation: 名古屋
• [Presentation] Temperature Dependence of Electron Transport between Quantum Dots and Electron Gas (2009)
  • Author(s): Y. Sakurai
  • Organizer: International Symposium on Nanoscale Transport and Technology
  • Place of Presentation: 神奈川
• [Presentation] Selective Growth of Self-Assembling Si and SiGe Quantum Dots (2008)
  • Author(s): K. Makihara
  • Organizer: 4th International SiGe Technology and Device Meeting
  • Place of Presentation: Hsinchu, 台湾
• [Presentation] Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories (2008)
  • Author(s): M. Ikeda
  • Organizer: The 2008 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: 大阪
• [Presentation] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories (2008)
  • Author(s): K. Shimanoe
  • Organizer: 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: 札幌
• [Presentation] Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4 (2008)
  • Author(s): H. Kaku
  • Organizer: 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: 札幌
• [Presentation] Electrical Detection of Si-tagged Proteins on HF-last Si(100) and Thermally Grown SiO_2 Surfaces (2008)
  • Author(s): S. Mahboob
  • Organizer: 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: 札幌
• [Presentation] Characteristics tunneling of Si quantum dot floating gate at low temperature and in magnetic fields (2008)
  • Author(s): Y. Sakurai
  • Organizer: 25^<th> International Conference on Low Temperature Physics
  • Place of Presentation: Amsterdam, Netherlands
• [Presentation] Formation of Metal Silicide Nanodots on Ultrathin SiO_2 for Floating Gate Application (2008)
  • Author(s): S. Miyazaki
  • Organizer: The European Materials Research Society 2008 Fall Meeting
  • Place of Presentation: Warszawa, Poland
• [Presentation] Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots (2008)
  • Author(s): M. Ikeda
  • Organizer: 2008 International Conference on Solid State Devices and Materials
  • Place of Presentation: 筑波
• [Presentation] Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO_2 (2008)
  • Author(s): K. Makihara
  • Organizer: 4th International Workshop in New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: 仙台
• [Presentation] AFM/KFM Detection of Si-tagged ProteinA on HF-last Si(100), Thermally Grown SiO_2 and Si-QDs Surfaces (2008)
  • Author(s): K. Makihara
  • Organizer: 4th International Workshop in New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: 仙台
• [Presentation] Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H_2-plasma Treatment and Its Application to Floating Gate Memories (2008)
  • Author(s): S. Miyazaki
  • Organizer: 4th International Workshop in New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: 仙台
• [Presentation] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO_2 (2008)
  • Author(s): K. Makihara
  • Organizer: 214th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing, and Device Symposium
  • Place of Presentation: Honolulu, USA
• [Presentation] Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H_2-Plasma Assisted Technique (2008)
  • Author(s): K. Makihara
  • Organizer: The 4^<th> Vacuum and Surface Sciences Conference of Asia and Australia
  • Place of Presentation: 松江
• [Presentation] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique (2008)
  • Author(s): K. Makihara
  • Organizer: International Union Material Research Society (IUMRS)-International Conference in Asia
  • Place of Presentation: 名古屋
• [Presentation] Metal Nanodots Formation Induced by Remote Plasma Treatment-Comparison between the effects of H_2 and rare gas plasmas- (2008)
  • Author(s): K. Shimanoe
  • Organizer: International Union Material Research Society (IUMRS)-International Conference in Asia
  • Place of Presentation: 名古屋
• [Presentation] Plasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO_2 for Floating Gate Application (2008)
  • Author(s): S. Miyazaki
  • Organizer: International Union Material Research Society (IUMRS)-International Conference in Asia
  • Place of Presentation: 名古屋
• [Presentation] Luminescence Study of Multiply-Stacked Structures Consisting of Impudty-Doped Si Quantum Dots and Ultrathin SiO_2 (2007)
  • Author(s): K. Makihara
  • Organizer: The 2007 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: 大阪
• [Presentation] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Elecrical Charging Characteristics (2007)
  • Author(s): K. Makihara
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
• [Presentation] Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH_4 (2007)
  • Author(s): T. Sakata
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
• [Presentation] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories (2007)
  • Author(s): S. Miyazaki
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
• [Presentation] Formation of Ni Nanodots Induced by Remote Hydrogen Plasma (2007)
  • Author(s): K. Makihara
  • Organizer: The European Materials Research Society 2007 Spring Meeting
  • Place of Presentation: Strasbourg, France
• [Presentation] Phosphorus Doping to Si Quantum Dots for Floating Gate Application (2007)
  • Author(s): K. Makihara
  • Organizer: 2007 Silicon Nanoelectronics Workshop
  • Place of Presentation: 京都
• [Presentation] Impact of Boron Doping to Si Quantum Dots on Light Emission Properties (2007)
  • Author(s): K. Okuyama
  • Organizer: 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Gyeongju, Korea
• [Presentation] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM (2007)
  • Author(s): K. Makihara
  • Organizer: 2007 Asia-Pacific Workshop on Fundamentals and Aaalications of Advanced Semiconductor Devices
  • Place of Presentation: Gyeongju, Korea
• [Presentation] Characterization of Chemical Bonding Features and Defect State Density in HfSiO_xN_y/SiO_2 Gate Stack (2007)
  • Author(s): A. Ohta
  • Organizer: Conference on Insulating Films on Semiconductors 2007
  • Place of Presentation: Glyfada, Greece
• [Presentation] Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots (2007)
  • Author(s): K. Okuyama
  • Organizer: 2007 International Conference on Solid State Devices and Materials
  • Place of Presentation: 筑波
• [Presentation] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-Plasma Treatment and Their Electrical Charging Characteristics (2007)
  • Author(s): K. Makihara
  • Organizer: 2007 International Conference on Solid State Devices and Materials
  • Place of Presentation: 筑波
• [Presentation] High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH_4+H_2 (2007)
  • Author(s): T. Sakata
  • Organizer: The Sixth Pacific Rim International Conference on Advanced Materials and Processing
  • Place of Presentation: Jeju, Korea
• [Presentation] Characterization of Electronic Charged States of Nickel Sikicide Nanodots Using AFM/Kelvin Probe Technique (2007)
  • Author(s): R. Nishihara
  • Organizer: The Sixth Pacific Rim International Conference on Advanced Materials and Processing
  • Place of Presentation: Jeju, Korea
• [Presentation] Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors (2007)
  • Author(s): M. Ikeda
  • Organizer: 3nd International Workshop in New Group IV Semicond uctor Nanoelectronics
  • Place of Presentation: 仙台
• [Presentation] High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz Inductively-Coupled Plasma of H_2-diluted GeH_4 (2007)
  • Author(s): S. Miyazaki
  • Organizer: 3nd International Workshop in New Group IV Semicond uctor Nanoelectronics
  • Place of Presentation: 仙台
• [Presentation] Formation of PtSi Nanodots Induced by Remote H_2 Plasma (2007)
  • Author(s): K. Simanoe
  • Organizer: 3nd International Workshop in New Group IV Semicond uctor Nanoelectronics
  • Place of Presentation: 仙台
• [Presentation] Electron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memories (2007)
  • Author(s): S. Miyazaki
  • Organizer: 3nd International Workshop in New Group IV Semicond uctor Nanoelectronics
  • Place of Presentation: 仙台
• [Remarks]
  • URL: http://semimaki.web.fc2.com/
• [Remarks]
  • URL: http://semimaki.web.fc2.com/
• [Patent(Industrial Property Rights)] 測定装置および測定方法 (2008)
  • Inventor(s): 牧原克典, 宮崎誠一, 東清一郎
  • Industrial Property Rights Holder: 広島大学
  • Filing Date: 2008-07-31
  • Overseas