MORI Yusuke Faculty of Engineering, Osaka University Assistant, 工学部, 助手 (90252618)
HATTA Akimitsu Faculty of Engineering, Osaka University Assistant, 工学部, 助手 (50243184)
ITO Toshimichi Faculty of Engineering, Osaka University Associate Professor, 工学部, 助教授 (00183004)
KATODA Takashi Faculty of Engineering, University of Tokyo Associate Professor, 工学部, 助教授 (90013739)
SASAKI Takatomo Faculty of Engineering, Osaka University Professor, 工学部, 教授 (50029237)
LEE Chongmu Department of Metallurgical Engineerig, Inha University Professor, 工学大学, 教授
Prof. Hiraki and Dr. Hatta visited Korea from Oct. 16 to 21, 1995. They visited ETRI to discuss about the Korean project aiming at flat display panel of diamond. Because some interesting results about electron emission from diamond had been already reported by Hiraki's group in Osaka university, some collaborations were proposed from both country. After that, they moved to Seoul to attend the 3rd IUMRS International Conference in Asia, in which some papers about diamond and its related materials were presented. They went to Inchon city to visit Inha university. Basing on the recent results in Korea and Japan, they discussed with Prof. Lee about their collaboration project in this fiscal year.
From March 1 to 5, 1996, Prof. Hiraki, Prof. Ito, Dr. Hatta, and Dr. Mori visited Korea with Prof. Murakami and Prof. Koide of Kyoto university. They visited Cheju National university, where one of the biggest project for diamond electronics device was starting. The researchers in Cheju National University were very interested in the diamond growth at low temperature by ECR plasma CVD method which would be an important technique for their goal of SOD device. After that, they moved to Inchon to visit Inha university for discussion about experimental results obtained in the research project in this fiscal year. Prof. Murakami and Prof. Koide were also invited to have presentations about their recent works on metal electorodes on diamond.
In Osaka university, studies on the following topics were carried out ; low temperature synthesis of diamond films with nanocrystal seeding, bias enhanced nucleation by microwave plasma CVD, charactrization of highly oriented diamond films, high speed deposition of diamond at low temperature by pulse modulated plasma, high speed deposition of highly oriented diamond films on silicon by DC arc plasma jet CVD, and nucleation of diamond on silicon over large area by ECR plasma CVD.