Studies of Plasma Etching and Radical Reaction Mechanism Employing Radical Injection Technique
Grant-in-Aid for Scientific Research (C)
|Allocation Type||Single-year Grants|
|Research Institution||Nagoya University|
HORI Masaru NAGOYA UNIVERSITY ASSOCIATE PROFESSOR, 工学部, 助教授 (80242824)
|Project Period (FY)
1995 – 1996
Completed(Fiscal Year 1996)
|Budget Amount *help
¥2,200,000 (Direct Cost : ¥2,200,000)
Fiscal Year 1996 : ¥300,000 (Direct Cost : ¥300,000)
Fiscal Year 1995 : ¥1,900,000 (Direct Cost : ¥1,900,000)
|Keywords||RADICAL / PLASMA / ETCHING / FLUOROCARBON / SILICON / CF_2 / INFRARED LASER / ECR / レーザー分光 / 酸化シリコン|
1. Development of Etching Apparatus Employing Radical Injection Technique
Radical source was newly developed to generate CF_2 radicals selectively by using pyrolysis of HFPO gas.
Radical source was evaluated by infrared laser absorption spectroscopy and so CF_2 radical density was 1x 10^<13>cm^<-3> at 0.67Pa and 900K of the wall of radical source.
Therefore, we have successfully developed the CF^2 radical source.
2. Controlling of Radical Species and Clarification of Radical Reaction Mechanism Employing Radical Injection Technique
The radical source was attached to the ECR etching apparatus and CF_2 radicals were injected into ECR Ar or Ar/H_2 downstream plasma. The fluorocarbon films were analyzed by XPS and FT-IR method.
It was found that CF_2 radical was the important precursor for the formation of fluorocarbon films with irradiation of ions.
In the case of ECR Ar plasma, fluorine-rich films were formed. Onthe other hand, carbon-rich films were formed in ECR Ar/H_2 plasma.
3. High Selectively Etching of SiO_2/Si Employing Radical Injection Technique
SiO_2/Si Etching was performed by CF_2 radical injection into ECR ECR Ar or Ar/H_2 downstream plasma. With-200V of 400kHz rf biases, the etching selectivity was about 3 in Ar plasma with CF_2 radical injection. On the other hand, the selectivity was infinite in Ar/H_2 plasma.
Consequently, we found the high selectively etching of SiO_2/Si was obtained by controlling the CF_2 radicals.
Research Products (35results)