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Crystal Structures and their phase stabilities of mesoscopic order and disorder phases in III2VI3 compound semiconductor containint structural vacancy

Research Project

Project/Area Number 08455011
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

NAKAMURA Yoshio  Tokyo Institute of technology, Department of Engineering, Associate Professor, 工学部, 助教授 (00164351)

Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 1997: ¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 1996: ¥4,600,000 (Direct Cost: ¥4,600,000)
Keywordscompound semiconductor / long period superstructure / mesoscopic / structural vacancy / satellite reflection / X ray diffraction / electron microscopy / X線回析 / 相変態
Research Abstract

One of the basic structures of III2VI3 compound semiconductors is zincblend structure and one third of cation sites of III2VI3 compounds are vacant. We have found a long period super structure appears in the Ga2Te3 annealed at 785゚C having 3 dimensional planer defects with periodicity of every ten {111} planes. On the basis of image contrast calculation and geometrical consideration, the origin of the periodic planer defects is found to be agregated structural vacancies which locate in 1/3 of cation sublattice. That is, although Se sublattice is perfect FCC,the crystal consists of tetrahedraons anf octahedrans whose outer surfaces are all {111} vacancy planres, and structure of the area which are surrounded by vacancy planes is nomal zincblend structure.
In this structure, vacancy content is imhpmogenious on the unit cell scale, but homogenious on the mesoscopic area in which several ten thousands of exsists. The phase is no longer simple order phase and is recognized by mesoscopic or mesoscopic order phase. The main stabilization mechanism of the mesoscopic compound semiconductor is to form four fold group VI atoms as much as possible. For the question why the vacancy planes periodically aline, however, clear explanation is not given.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (25 results)

All Other

All Publications (25 results)

  • [Publications] 中村 吉男, 花田 剛: "構造空孔を含む化合物半導体の規則-メソスコピック転移" 電子顕微鏡. 32. 150-154 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hanada, A.Yamana, Y.Nakamura, O.Nittono and T.Wada: "Crystal structure of CuIn3Se5 semiconductor studied by Electron and X-ray diffraction" Jpn.J.Appl.Phys.36. L1494-L1497 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Suzuki, T.Uenoyama, T.Wada, T.Hanada and Y.Nakamura: "Effect of crystal symmetry on electronic structures of CuInSe2 and CuIn3Se5" Jpn.J.Appl.Phys.36. L1139-L1141 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hanada, F.Izumi, Y.Nakamura, O.Nittono, Q.Huang and A.Santoro: "NEUTRON AND ELECTRON DIFFRACTION STUDIES OF ZnGa2Se4" phisica B. (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Tanaka, S.Nagakura, Y.Nakamura and Y.Hirotsu: "Electron Crystallography study of Tempered Iron-Nitrogen Martensite and Structure Refinement of Precipitated α″-Fe16N2" Acta Mater.45. 1401-1410 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Nakamura and T.Hanada: "Order-mesoscopic transition in compound semiconductor containind structural vacancies (Japanese)" Denshi-kenbikyo. 32. 150-154 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hanada, A.Yamana, Y.Nakamura, O.Nittono and T.Wada: "Crystal structure of CuIn3Se5 semiconductor studied by Electron and X-ray diffraction" Jpn.J.Appl.Phys.36. L1494-L1497 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Suzuki, T.Uenoyama, T.Wada, T.Hanada and Y.Nakamura: "Effect of crystal symmetry on electronic structures of CuInSe2 and CuIn3Se5" Jpn.J.Appl.Phys.36. L1139-L1141 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hanada, F.Izumi, Y.Nakamura, O.Nittono, Q.Huang and A.Santoro: "NEUTRON AND ELECTRON DIFFRACTION STUDIES OF ZnGa2Se4" phisica B. (in print). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Tanaka, S.Nagakura, Y.Nakamura and Y.Hirotsu: "Electron Crystallography study of Tempered Iron-Nitrogen Martensite and Structure Refinement of Precipitated alpha"-Fe16N2" Acta Mater.45. 1401-1410 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hanada, A.Yamana, Y.Nakamura, O.Nittono and T.Wada: "A norvel Structure model for CuIn3Se5" Technical Digest of PVSEC-9, Miyazaki/Japan. 595-596 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] O.Nittono, T.Hanada and Y.Nakamura: "Crystal Structure of Vacancy Ordered ZnGa2Se4" Collected Abstracts of IUCr., Seattle/USA. c-391 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Ye, T.Yoshida, Y.Nakamura and O.Nittono: "Realization of Giant Optical Rotatory Power for Red and Infrared Light using III2VI3 Compound Semiconductor ; (Ga_XIn_<1-X>)_2Se_3" Jpn.J.Appl.Phys.35. 4395-4400 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hanada, Y.Nakamura, Y.Watanabe and O.Nittono: "Two Distinct Phases in Ga2Se3 Compound Semiconductor" Trans.MRS Japan. 20. 743-746 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Ye, Y.Nakamura and O.Nittono: "Vacancy ordered Structure of the III2VI3 Compound Semiconductor (Ga0.3In0.7) 2Se3 Studied by Electron Diffraction and Microscopy" Phil.Mag.A. 73. 18-169 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 中村吉男,花田 剛: "構造空孔を含む化合物半導体の規則-メソスコピック転移" 電子顕微鏡. 32. 150-154 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Hanada, A.Yamana, Y.Nakamura, O.Nittono and T.Wada: "Crystal structure of CuIn3Se5 Semiconductor studied by Electron and X-ray diffraction" Jpn.J.Appl.Phys.36. L1494-L1497 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Suzuki, T.Uenoyama, T.Wada, T.Hanada and Y.Nakamura: "Effect of crystal symmetry on electronic structures of CuInSe2 and CuIn3Se5" Jpn.J.Appl.Phys.36. L1139-L1141 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Hanada, F.Izumi, Y.Nakamura, O.Nittono, Q.Huang and A.Santoro: "NEUTRON AND ELECTRON DIFFRACTION STUDIES OF ZnGa2Se4" phisica B. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Tanaka, S.Nagakura, Y.Nakamura and Y.Hirotsu: "Electron Crystallography study of Tempered Iron-Nitrogen Martensite and Structure Refinement of Precipitated a″-Fe16N2" Acta Mater.45. 1401-1410 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Hanada,A.Yamana,Y.Nakamura,O.Nittono and T.Wada: "A novel structure model for CuIn_3Se_5" Technical Digest of Intel PVSEC-9. 595-596 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] O.Nittono,T.Hanada and Y.Nakamura: "Crystal Structure of Vacancy Ordered ZnGa2Se4" Acta.Cryst.A52. C-391 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] J.Ye,T.Yoshida,Y.Nakamura and O.Nittono: "Realization of giant Optical Rototory Power for Red and Infrared Light using III2VI3 Compound Semiconductor(Ga_xIn_<1-x>)_2Se_3" Jpn.J.Appl.Phys.35. 4395-4400 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Hanada,Y.Nakamura,Y.Watanabe and O.Nittono: "Two Distinct Phases in Ga2Se3 Compound Semiconductor" Trans.MRS-J,. 20. 743-746 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] J.Ye,Y.Nakamura and O.Nittono: "Vacancy ordered Structure of the III2VI3 Compound Semiconductor(Ga0.31M0.7)2Se3 Studied by Electron Diffraction and Microscopy" Phil.Mag.A73. 169-186 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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