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New electric functionality of lattice matched ferroelectric semiconductor heterostructures

Research Project

Project/Area Number 08455014
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKYUSHU INSTITUTE OF TECHNOLOGY

Principal Investigator

WATANABE Yukio  Kyushu Institute of Technology, Engineering, Associate professor, 工学部, 助教授 (40274550)

Project Period (FY) 1996 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥6,100,000 (Direct Cost: ¥6,100,000)
Fiscal Year 1998: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1997: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1996: ¥5,000,000 (Direct Cost: ¥5,000,000)
Keywordsferroelectric / surface / size effect / field effect / domain / pn junction / diode / memory device / 薄膜 / サイズ効果 / 理論 / FET / 分域 / (Ba,Sr)TiO_3 / 半導体構造 / BaTiO_3 / トンネル電流 / Bi_4Ti_3O_<12> / 極薄膜 / 応力 / 緩和電流 / メモリー
Research Abstract

1) Current transport through ferroelectric heterostructures
Current through (Pb, La)(Zr, Ti)0_3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally deternuned by the carrier conduction type of the semiconductors. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a pn or a pp junction at the ferroelectric semiconductor interface. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged states. A reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in (Pb, La)(Zr, Ti)0_3/SrTiO_3 : Nb due to a possible band bending by the spontaneous polarization (P) switching. (p : hole conduction type, a : electron conduction type).
Additionally, an anomalous increase of el … More ectric conduction with decreasing temperature was found in the current through Pb(Ti, Zr)0_3 ferroelectric/SrTiO_3 epitaxial heterostructures. Comparison with current-voltage characteristics of other ferroelectric epitaxial heterostructures and the analysis using the band diagram indicate that the current is tunneling through the Rn lunction formed by Pb(Ti, Zr)O_3 and SrTiO_3.
Furthermore, properties of nm-scale electrical contact on single domained part of ferroelectric is investigated.
2) Construction of theoretical frame work
Ideal ferroelectrics have mostly been modeled as insulators, i.e., infinite band gap materials, having a spontaneous polarization. Based on this assumption, theories for the finite size effect, the domain configuration, and the depolarization field instability have been proposed. However, most of oxide perovskite ferroelectrics have finite band gaps of 3 to 4 eV.We show that the inclusion of the finite band gap effect changes drastically conventional understanding of the finite size effect, domain structares and others. The conclusions extracted from the present approach are consistent with recent experimental results. Less

Report

(4 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • 1996 Annual Research Report
  • Research Products

    (61 results)

All Other

All Publications (61 results)

  • [Publications] Y.Watanabe: "Theoretical stability of the polarization in a thin semiconducting ferroelectric." Phys.Rev.B. 57・2. 789-804 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Tunneling current through a possible all-perovskite oxide pn junction" Phys.Rev.B (Rapid Commun). 57・10. R5563-R5566 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Theoretical stability of the polarization in insulating-ferroelectric/semicoductor structures." J.Appl.Phys.83・4(84・6). 2179-2193(3428) (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe ら: "Recurrent local resistance breakdown of an epitaxial BaTiO_3/SrTiO_3 heterostructure" Appl.Phys.Lett.72・19. 2415-2417 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Electrical transport through Pb(Zr,Ti)O_3 pn and pp heterostructures modulated by bound charges at a ferroelectric surface: Ferroelectric pn diode" Phys.Rev.B. (発表予定). (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe ら: "Memory effect in Ferroelectric/Perovskite-Semiconductor Heterostructures" Ext.Abst.3^<rd> Pac.Rim Conf.on Ferroelectric Applications. 192-195 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe ら: "Epitaxial stress effect on crystallographic properties of Bi_4Ti_3O_<12> heterostructures and their leakage current behaviors" Jpn.J.Appl.Phys.35・11. 5745-5751 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe ら: "Memory effect in Ferroelectric/Perovskite-Semiconductor Heterostructures" Integrated Ferroelectrics. 13-1-3. 433-440 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 渡部: "銅酸化物ペロブスカイト及びその周辺物質による強誘電体ヘテロ構造"" 電子セラミック・プロセス研究会エキスト. 42-47 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 渡部: "強誘電体薄膜の集積メモリー応用とその物理的基礎に向けて" 固体物理. 33・3. 223-232 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Theory of stability and size effect of semiconducting ferroelectric and the feasibility of ferroelectric FET" J.Korean Phys.Soc.32. S130-S132 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe ら: "Highly resolved conduction properties of ferroelectric/semiconductor diode exhibiting memory effect" J.Korean Phys.Soc.32. S1361-S1363 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Energy band diagram of the ferroelectric heterostructures and its application to the thermodynamic feasibility of the ferroelectric FET" Solid State Ionics. 108・1-4. 59-65 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Evolution of memory effect of current through ferroelectric p/p and p/n heterostructures" Solid State Ionics. 108・1-4. 109-115 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Theoretical investigation of the thickness effect of ferroelectric incorporating semiconducting properties" Applied Surface Science. 130-132・1-4. 610-615 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe ら: "Leakage current spectroscopy of epitaxial ferroelectric/semiconductor heterostructures and their memory effect" Applied Surface Science. 130-132・1-4. 682-688 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe and D.Sawamura: "Thermodynamic Stability of he Spontaneous Polarization and the Space Charge layer in Ferroelectric/Semiconductor Heterostructures" Jpn.J.Appl.Phys.36・9B. 6162-6166 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Okano, Y.Watanabe ら: "Electrode material dependence of leakage current characteristics of epitaxial BaTiO_3 films on p- and n-type electrodes" Jpn.J.Appl.Phys.37・9B. 1501-1503 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe and A.Masuda: "Self-field effect,∇P,and thermodynamic stability of spontaneous polarization in thin ferroelectric platelets" Ferroelectrics. 217. 53-64 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe and A.Masuda: "Ferroelectric self-field effect:Implications for size effect and memory device" Integrated Ferroelectrics. (発表予定).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: ""Towards the application of the ferroelectric thin film in integrated circuits and its physical foundation" (in Japanese)" Kotaibutsuri. 33 (3). 223-232 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: ""Ferroelectric heterostructures using copper oxide perovskites and the related materials" (in Japanese)" Text of Densi ceramic/process symposium. 42-47 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe, Y.Matsumoto, and M.Tanamura: ""Memory effect in Ferroelectric/Perovskite-Semiconductor Heterostructures"" Ext.Abst.3^<rd> Pac.Rim Conf.on Ferroelectric Applications. 192-195 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe, Y.Matsumoto, and M.Tanamura: ""Epitaxial stress effect on crystallographic properties of Bi_4Ti_3O_<12> heterostrctures and their leakage current behaviors"" Jpn.J.Appl.Phys.35 (11). 5745-5751 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe, Y.Matsumoto, and M.Tanamura: ""Memory effect Ferroelectric/Perovskite-Semiconductor Heterostructures"" Integrated Ferroelectrics. 13 (1-3). 433-440 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe and D.Sawamura: ""Thermodynamic Stability the Spontaneous Polarization and the Space Charge layer Ferroelectric/Semiconductor Heterostructures"" Jpn.J.Appl.Phys.36 (9B). 6162-6166 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Theory of stability and size effect of semiconducting ferroelectric and the feasibility of ferroelectric FET" J.Korean Phys.Soc.32. S130-S132 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe, D.Sawamura, N.Toyama, and M.Okano: "Highly resolved conduction properties of ferroelectric/semiconductor diode exhibiting memory effect." J.Korean Phys.Soc.32. S1361-S1363 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Theoretical stability of the polarization in a thin semiconducting ferroelectric" Phys.Rev.B. 57 (2). 789-804 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Theoretical stability of the polarization in insulating ferroelectric/semiconductor structures" J.Appl.Phys. 83 (4), 84 (6). 2179-2193, 3428 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Tunneling current through a possible all-perovskite oxide pn junction" Phys.Rev.B. 57 (10) (Rapid Commun.). R5563-R5566 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe, D.Sawamura, and M.Okano: "Recurrent local resistance breakdown of an epitaxial BaTiO_3/SrTiO_3" Appl.Phys.Lett.72 (19). 2415-2417 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Energy band diagram of the ferroelectric heterostructures and is application to the thermodynamic feasibility of the ferroelectric FET" Solid State Ionics. 108/1-4. 59-65 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe, D.Sawamura, and M.Okano: "Evolution of memory effect of current through ferroelectric p/p and p/n heterostructures" Solid State Ionics. 108/1-4. 109-115 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe, D.Sawamura, M.Okano, and N.Toyama: "Leakage current spectroscopy of epitaxial ferroelectric/semiconductor heterostructures and their memory effect" Applied Surface Science. 130-132 (1-4). 682-688 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Theoretical investigation of the thickness effect of ferroelectric incorporating semiconducting properties" Applied Surface Science. 130-132 (1-4). 610-615 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe and A.Masuda: "Self-field effect, *P, and thermodynamic stability of spontaneous polarization in thin ferroelectric platelets" Ferroelecrics. 217. 53-64 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Okano, D.Sawamura, Y.Watanabe: "Electrode material dependence of leakage current characteristics of epitaxial BaTiO_3 films on p- and n-type electrodes" Jpn.J.Appl.Phys.37 (9B). 1501-1503 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe: "Electrical transport through Pb (Zr, Ti)O_3 pn and pp heterostructures modulated by bound charges at a ferroelectric surface : Ferroelectric pn diode" Phys.Rev.B. (in press). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe and A.Masuda: "Ferroelectric self-field effect : Implications for size effect and memory device" Integratd Ferroelectrics. (accepted).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Watanabe etal: "Local Recurront resistance breakoown of epitaxial BaTiO_3 /SrtiO_3 heterostructures" Applied Physccs Letters. 72(19). 2415-2417 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Watanabe etal: "Evolution of memory effect of current thronugh terrcelectric" Solid State Ionics. 108・1-4. 59-65 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Watanabe etal: "Leakage current spectroseopy of epitaxoni ferroelectric/semiconduetor" Applied Surface Science. 130-132・1-4. 682-688 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Watanabe and A.Masuda: "Self fielt effect JP,and thermodynaneie stability of spontaneous" Ferroelectric. 217. 53-64 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Okano et al: "Electrode material dependonce of leakage current characterosites" Jpn.Journal of Applied Physics. 37・9B. 1501-1503 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Watanabe: "Electrocal transport through Pb(Zr,Ti)O_3 pnond ppheterostructures" Physical Review B. (5月号予定). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Watanabe: "Energy bond diagrom of the ferroeiectine hetero structures" Solid State Ionics. 108・1-4. 59-65 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Watanabe: "Theoretical Investigation of the thickness effect of ferroelectrics" Applied Surface Science. 130-132・1-4. 610-615 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Watanabe and Sawamura: "Thermodynamic stability of the Sponteneous Polarization and the space charge layer in Ferroelectric/semiconductor Heterostructures" Jpn.J.Appl.Phys.36・9B. 6162-6166 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe: "Theory of stability and Size effect of semiconducting ferroelectric and the feasibility of ferroelectric FET" J.Korean.Phys.Soc.(Proc.IMF-9). (予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe et al: "Highly resolved conductance proparties of ferroelectric/semiconductor diole exhibiting memory effect" J.Korean.Phys.Soc.(Proc.IMF-9). (予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe: "Theoretical stability of the polarization in insulatry ferroelectric/semiconductor structurs" J.Appl.Phys.83・4. 2179-2193 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe: "Theoretical stability of the polarization in a thin semiconducting ferroellectric" Phys.Rev.B. 57・2. 789-804 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe: "Energy band diagram of the ferroelectric heterostructures and its application to the thermodynamic teasibility of the …" Solid State Ionics. (予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe et al.: "Evolution of memory effect of current through ferroelectric p/p and p/n heterostructures" Solid State Ionics. (予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe: "Theoretical investigation of the thickness effect of ferroeleotric in corporating semiconducting properties" Appl.Surface Science. (予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe: "Tunneling current through a possible all perovskile pn function" Phys.Rev.B(Rapid com). 57・10(印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 渡部: "強誘電体薄膜の集積メモリー応用とその物理的基礎に向けて" 固体物理. 33・3(予定). 223-232 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Watanabe et al.: "Expitaxial stress effect on crystallographic properties of heterostructures and their leakage current behaviors" Jpn.J.Appl.Phys.35・11. 5745-5751 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Watanabe et al.: "Memory effects in ferroelectric/perovskite-semiconductor heterostructures." Ext. Absts. PacRimFerro3. 192-195 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Watanabe et al.: "Memory effects in ferroelectric/perovskite-semiconductor heterostructures" Integrated Ferroelectrics. (印刷中).

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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