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Electron density distrubution and physical properties in chalcogenide ceramics semiconductors

Research Project

Project/Area Number 08455298
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

ISHIZAWA Nobuo  Tokyo Institute of Technology, Materials and Structures Laboratory, associate professor, 応用セラミックス研究所, 助教授 (90151365)

Project Period (FY) 1996 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥5,800,000 (Direct Cost: ¥5,800,000)
Fiscal Year 1998: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1997: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1996: ¥4,200,000 (Direct Cost: ¥4,200,000)
Keywordschalcogenide / area detector / pressure induced phase transition / structure analysis / single crystal X-ray diffraction / electron density distribution / diamond anvil cell / 単結晶X線回析
Research Abstract

Symmetry of AgGaS_2 high-pressure phase has been determined by the single crystal method using a diamond anvil pressure cell. The crystal was monoclinic with space group Cc. Intensity data of a specimen in the diamond anvil cell were collected at 5.5 GPa, using a horizontal-type four-circle diffractometer at the beam line 14A, Photon Factory, KEK, with synchrotron radiation of 0.5 * wavelength. The structure has been determined from the three-dimensional X-ray diffraction data. The phase transition at 4.2 GPa was reversible. A most conspicuous structural feature accompanying the phase transition was a characteristic compression of one of the octahedral large interstices formed by sulfur atoms. It was also found that the difference of bonding nature between the ionic Ag-S and the more covalent Ga-S plays an important roll in the high-pressure phase transition. Development of the software to control the diffractometer for the high-pressure measurement has been undertaken. The performance of the diffractometers, including the four-circle diffractometers with Ag rotating anode, that with synchrotron radiation, and the two-axis diffractometer with the CCD area detector, were compared using a CuInSe_2 crystal, for more accurate structural investigation under high pressures. The structure of Cu_2In_4Se_7, a key material to govern the development of solar device based on CuInSe_2 was first solved in this study.

Report

(4 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • 1996 Annual Research Report

Research Products

(23 results)

All Other

All Publications

  • [Publications] K.SUDA: "Structure refinement of CuInSe_2 by CCD camera" Acta Cryst.Suppl. A52. C332-C332 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.KITAHARA: "Pressure-Induced Phased Transition of AgGaS_2" Acta Cryst.Suppl. A52. C358-C358 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Kitahara: "A new phase of chalcopyrite-type AgGaS_2 under high pressures" Transactions of the Materials Resrearch Society of Japan. 20. 719-722 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Kitahara: "A CCD Camera System for X-ray Diffraction Studies of Single Crystals" Report of RLEM, Tokyo Institute of Technology. 21. 13-19 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.KITAHARA: "Monoclinic High-Pressure Phase of AgGaS_2" Phys.Rev.B. 55[5]. 2690-2692 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.KITAHARA: "Distorted chalcopyrite-type structure of AgGaS2 under high pressure" Materials Science and Engineering Serving Society, Elsevier Science B.V.Netherlands. 265-268 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Suda, H.Kitahara, N.Ishizawa & Y.Noda: "Structure refinement of CuInSe_2 by CDD camera" Acta Cryst.Suppl.A52C331. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Kitahara, N.Ishizawa, F.Marumo & Y.Noda: "Pressure-Induced Phase Transition of AgGaS_2" Acta Cryst.Suppl.A52C538. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Kitahara, N.Ishizawa, F.Marumo & Y.Noda: "A new phase of chalcopyrite-type AgGaS_2 under high pressures" Transactions of the Materials Research Society of Japan. 20. 719-722 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Kitahara, K.Suda & N.Ishizawa: "A CCD Camera System for X-ray Diffraction Studies of Single Crystals" Report of RLEM,Tokyo Institute of Technology. 21. 13-19 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Kitahara, N.Ishizawa, F.Marumo & Y.Noda: "Monoclinic High-Pressure Phase of AgGaS_2" Phys.Rev.B. 55[5]. 2690-2692 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Kitahara, N.Ishizawa, F.Marumo & Y.Noda: "Distorted chalcopyrite-type structure of AgGaS_2 under high pressure" Materials Science and Engineering Serving Society, Ed S.Somiya, M.Dpyama & R.Roy, Elsevier Science B.V.265-268 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.KITRAGARA: "Pressure-Induced Phase Transition of AgGaS_2" Acta Crystallographica. A52. C538-C538 (1996)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.SUDA: "Structure Refinement of CuInSe_2 by CCD camera" Acta Crystallographica. A52. C331-C331 (1996)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.KITAHARA: "A CCD camera System for X-ray Diffraction Studies of Single Crystals" Repoer of RLEM,Tokyo Institute of Technology. 21. 13-19 (1996)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.KITAHARA: "A new Phase of Charcopyrite-Type AgGaS_2 under High Pressures" Transactions of the Materials Research Society of Japan. 20. 719-722 (1996)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.KITAHARA: "Monoclinic High-Pressure Phase of AgGaS_2" Phys.Rev.B. 55[5]. 2690-2692 (1997)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.KITAHARA: "Distorted charcopyrite-type structure of AgGaS_2 under high pressure" Materials and Science and Engineerng Serving Society. 265-268 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.KITAHARA: "Monoclinic High-Pressure Phase of AgGaS" Phys.Rev.B. 55[5]. 2690-2692 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.SUDA: "Structure refinement of Culise CCD camera" Acta Cryst. Suppl. A52. C332-C332 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.KITAHARA: "Pressure-Induced Phased Transition of AgGaS" Acta Cryst. Suppl.A52. C358-C358 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Kitahara: "A CCD Camera System for X-ray Diffraction Studies of Single Crystals" Report of RLEM,Tokyo Institute of Techology. 21. 13-19 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Kitahara: "A new phase of chalcopyrite-type AgGaS2 under high pressures" Transactions of the Materials Resrearch Society of Japan. 20. 719-722 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-03-31   Modified: 2016-04-21  

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