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Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display

Research Project

Project/Area Number 08555083
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOSHIDA Nobuyoshi  Tokyo Univ.of A&T,Prof., 工学部, 教授 (50143631)

Co-Investigator(Kenkyū-buntansha) KOYAMA Hidaki  Tokyo Univ.of A&T,Res.Assoc., 工学部, 助手 (40234918)
SERIKAWA Tadashi  NTT,Senior Researcher, 主幹研究員
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥17,700,000 (Direct Cost: ¥17,700,000)
Fiscal Year 1997: ¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 1996: ¥14,400,000 (Direct Cost: ¥14,400,000)
Keywordspoly-Si film / anodization / quantum confinement / electroluminescence / light-emitting diode / flat-panel display / thin film transistor
Research Abstract

To develop large-area light-emissive flat panel display devices, light-emitting porous silicon diodes have been fabricated using studied for poly-crystalline silicon (poly-Si) films. The characteristics of poly-Si devices as light-emitting diodes (LED) are clarified. The major results and their significances are summarized as follows.
1. Process technology of poly-Si-based LEDs
Appropriate dervice confifuration of poly-Si diodes as LEDs was determined by detailed investigations of the anodization conditions of poly-Si films, sstructuring of the active layr, formation of injection electrodes. On a basis of these studies, poly-Si LEDs with an efficiency comparable to that of conventional porous silicon diodes foramed on single-crystlline substrates were successfully obtained.
2. Charaacteristics of poly-Si-based LEDs
Form some electrical and optical measurements, it has been shown that the electroluminescence (EL) in porous poly-Si diodes is based on the same injection mechanism as in the case of single-crystalline substrates. Advantageous features of porous poly-Si diodes over the conventional porous silicon ones were made clear regarding the stability and uniformity of the EL emission.
3. Fundamental aspects toward large-area display devices
The compatibilty of poorous poly-Si LEDs with a poly-Si thin film transistor was examined using a planar-type poly-Si TFT fabricated on the glass substrate based on a laser annealing technique. As the gate voltage is increased under a constant drain voltage, the driving current was supplied into the LRDs, and then significant EL emission was observed through the top contact. This result indicates the posiibility of porous poy-Si as an active component for integrated LED arrays on glass substrates with a large-area.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (48 results)

All Other

All Publications (48 results)

  • [Publications] N.Koshida, E.Takizawa, H.Mizuno, H.Koyama, and T.Sameshima: "Electroluminescent devices basedon polycrystalline silicon films for large-area applications" Mat.Res.Soc.Symp.Proc.486(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] X.Sheng, H.Koyama, and N.Koshida: "Efficient surface-emitting cold cathodes based on electroluminescent porous" J.Vac.Sci.& Technol.B. 16(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Araki, M.Takahashi, H.Koyama, and N, Koshida: "Performances of Buried-Type Porous Silicon Optical Waveguides," Mat.Res.Soc.Symp.Proc.486(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ueno and N.Koshida: "Negative-resistance effects in electroluminescent porous silicon diodes," Jpn.J.Appl.Phys.37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Koyama, Y.Matsushita, and N, Koshida: "Activation of blue emission fromoxidized porous silicon by annealing inwater vapor," J.Appl.Phys.82(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Matsumoto, Y.Masumoto, and N.Koshida: "Photo-and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes" Mat.Res.Soc.Symp.Proc.486(in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Matsumoto, Y.Masumoto, T.Nakagawa, M.Hashimoto, K.Ueno, and N.Koshida: "Electroluminescence from deuterium-terininated porous silicon" Jpn.J.Appl.Phys.36,. L1089-L1091 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] X.Sheng, T.Ozaki, H.Koyama, and N.Koshida: "Improved cold electron emission charactersitics of electroluminescent porous silicon diodes" J.Vac.Sci.& Technol.B. 15,. 1661-1665 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Araki, H.Koyama, and N.Koshida: "Precisely Tuned Emission from Porous Silicon Vertical Optical Cavity in the Visible Region" J.Appl.Phys.80. 4841-4844 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] N.Koyama, N.Shima, and N.Koshida: "Large and Irregular Shift of Photoluminescence Excitation Spectra Observed in Photochemically Etched Porous Silicon" Phys.Rev.B. 53. 13291-13294 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda, T.Koizumi, K.Obata, Y.Tezuka, S.Shin, and N.Koshida: "Surface Electronic Structures and Luminescence Mechanisms of Porous Si" J.Electrochem.Soc.143. 2502-2507 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Araki, H.Koyama, and N.Koshida: "Controlled Electroluminescence Spectra of Porous sSlicon Diodes with a Vertical Optical Cavity," Appl.Phys.Lett.52. 2956-2958 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Nakagawa, H.Koyama, and N.Koshida: "Control of structure and opticalanisotropy of luminescent porous silicon by magnetic-field assistec anodization," Appl.Phys.Lett.69. 3206-3208 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Mizuno, H, Koyama, and N.Koshida: "Oxide-Free Blue Photoluminescence from Photochemicall Etched Porous Silicon" Appl.Phys.Lett.69. 3779-3781 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Oguro, H.Koyama, T.Ozaki, and N.Koshida: "Mechanism of the Electroluminescence from Metal/Porous Si/n-Type Si" J.Appl.Phys.81. 1407-1412 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ueno, H.Koyama, and N, Koshida: "Nonlinear Electrical Functions of Porous Silicon Light-Emitting Diodes" Mat.Res.Soc.Symp.Proc.458(in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Araki, H.Koyama and N.Koshida: "Precisely tuned emission from porous silicon optical cavity in the visible region" J.appl.Phys.80. 4841-4844 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Koyama, N.Shima, and N.Koshida: "Large and irregular shift of photoluminescence excitaion spectra observed in photochemically etched porous silicon" Phys.Rev.B. 53(20). R13291-R13294 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda, t.Koizumi, K.Obata, Y.Tezuka, S.Shin and N.Koshida: "Electronic surface structures and photoluminescence mechanisms of porous Si" J.Electrochem.Soc.143. 2502-2507 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Akrke, H.Koyama, and N.Koshida: "Controlled electroluminescence of porous silicon diodes with a vertical optical cavity" Appl.Phys.Lett.52. 2956-2958 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Nakagawa, H.Koyama, and N.Koshida: "Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization" Appl.Phys.Lett.69. 3206-3208 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Mizuno, H.Koyama, and N.Koshida: "Oxide-free blue photoluminescence from photochemically etched porous silicon" Appl.Phys.Lett.69. 3779-3781 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Oguro, H.Koyama, T.Ozaki, and N.Koshida: "Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices" J.Appl.Phys.81. 1407-1412 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ueno, H.Koyama, and N,Koshida: "Nonlinear electrical functions of porous silicon lightemitting diodes" Mat.Res.Soc.Symp.Proc.452. 699-704 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Matsumoto, Y.Masumoto, T.Nakagawa, M.Hashimoto, K.Ueno, and N.Koshida: "Electroluminescence for deuterium-terminated porous silicon" Jpn.J.Appl.Phys.36. L1089-L1091 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] X.Sheng, T.Okazaki, H.Koyama, and N.Koshida: "Improved cold electron emission charactersitics of electroluminescent porous silicon diodes" J.Vac.Sci. & Technol.B. 15. 1661-1665 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Koyama, Y.Matsushita, and N.Koshida: "Activation of blue emission from oxidized porous silicon by annealing in water vapor" J.Appl.Phys.82(in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] X.Sheng, H.Koyama, and N.Koshida: "Efficient surface-emitting cold cathodes based on electroluminescent porous diodes" J.Vac.Sci.&Technol.B. 16(in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ueno and N.Koshida: "Negative-resistance effects in electroluminescent porous silicon diodes" Jpn.J.Appl.Phys.37(in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Araki, M.Takahashi, H.Koyama, and N.Koshida: "Performances of Buried-Type Porous Silicon Optical Waveguides" Mat.Res.Soc.Symp.Proc.486(9n press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Matsumoto, Y.Masumoto, and N.Koshida: "Photo-and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes" Mat.RES.Soc.Symp.Proc.486(in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] N.Koshida, E.Takizawa, H.Mizuno, H.Koyama, and T.Sameshima: "Electroluminescent devices based on polycrystalline silicon films for large-area applications" Mat.Res.Soc.Symp.Proc.486(in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] N.Koshida, E.Takizawa, H.Mizuno, H.Koyama, and T.Sameshima: "Electroluminescent devices based on polycrystalline silicon films for large-area applications" Mat.Res.Soc.Symp.Proc.486(in press). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] X.Sheng, H.Koyama, and N.Koshida: "Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes" J.Vac.Sci. & Technol.B. 16(in press). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Araki, M.Takahashi, H.Koyama, and N.Koshida: "Performances of Buried-Type Porous Silicon Optical Waveguides," Mat.Res.Soc.Symp.Proc.486(in press). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Ueno and N.Koshida: "Negative-resistance effects in electroluminescent porous silicon diodes," Jpn.J.Appl.Phys.37(in press). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Koyama, Y.Matsushita, and N.Koshida: "Activation of blue emission from oxidized porous silicon by annealing in water vapor," J.Appl.Phys.82(in press). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Matsumoto, Y.Masumoto, and N.Koshida: "Photo-and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes" Mat.Res.Soc.Symp.Proc.486(in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Matsumoto, Y.Masumoto, T.Nakagawa, M.Hashimoto, K.Ueno, and N.Koshida:"Electroluminescence from deuterium-terininated porous silicon" Jpn.J.Appl.Phys.36. L1089-L1091 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] X.Sheng, T.Ozaki, H.Koyama, and N.Koshida: "Improved cold electron emission charactersitics of electroluminescent porous silicon diodes" J.Vac.Sci. & Technol.B. 15,. 1661-1665 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Araki,H.koyama,and N.koshida: "Precisely Tuned Emission from Porous Silicon Vertical Optical Cavity in the Visible Region" J.Appl.Phys.80. 4841-4844 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] N.koyama,N.Shima,and N.Koshida: "Large and Irregular Shift of Photoluminescence Excitation Spectra Observed in Photochemically Etched Porous Silicon" Phys.Rev.B. 53. 13291-13294 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Suda,T.Koizumi,K.Obata,Y.Tezuka,S.Shin,and N.Koshida: "Surface Electronic Structures and Luminescence Mechanisms of Porous Si" J.Electrochem.Soc.143. 2502-2507 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Araki,H.Koyama,and N.Koshida: "Controlled Electroluminescence Spectra of Porous sSlicon Diodes with a Vertical Optical Cavity," Appl.Phys.Lett.52. 2956-2958 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Nakagawa,H.Koyama,and N.Koshida: "Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization," Appl.Phys.Lett.69. 3206-3208 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Mizuno,H.Koyama,and N.Koshida: "Oxide-Free Blue Photoluminescence from Photochemicall Etched Porous Silicon" Appl.Phys.Lett.69. 3779-3781 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Oguro,H.Koyama,T.Ozaki,and N.Koshida: "Mechanism of the Electroluminescence from Metal/Porous Si/n-Type Si" J.Appl.Phys.81. 1407-1412 (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Ueno,H.Koyama,and N.Koshida: "Nonlinear Electrical Functions of Porous Silicon Light-Emitting Diodes" Mat.Res.Soc.Symp.Proc.458(in press). (1997)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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