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Modeling of Nano-Scale Semiconductor Devices

Research Project

Project/Area Number 08650412
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionShibaura Institute of Technology

Principal Investigator

HORIO Kazushige  Shibaura Institute of Peofessor Technology, Faculty of Systems Engineering, システム工学部, 教授 (10165590)

Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1997: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1996: ¥1,000,000 (Direct Cost: ¥1,000,000)
Keywordsnonequilibrium carrier transport / heterojunction bipolar transistor / energy transport model / cutoff frequency / gallium arsenide / device simulation
Research Abstract

The purpose of this work is to refine the device simulation model for ultra-small-sized semiconductor devices. We have tried to refine the energy transport model that can be used to treat the nonequilibrium carrier transport in nano-scale devices.
Heterojunction bipolar transistors (HBTs) are the semiconductor devices where the nonequilibrium carrier transport becomes particularly remarkable, and some analyzes by the energy transport model have been made. However, the methods of giving transport parameters were too rude. For an example, the composition- and doping-dependences of transport parameters were often neglected, and their energy dependence was not adequately incorporated. Therefore, in this work, we have developed a new method to give transport parameters (such as energy relaxation time, carrier mobility, and upper-valley fraction) for any composition, doping density and carrier energy. This is realized by using the Monte Carlo method and the linear extraporation method. This approach is applied to the simulation of AlGaAs/GaAs HBTs. As a result, we have found that the simplified conventional approaches lead to overestimation or underestimation of the velocity overshoot effects and to the inaccurate evaluation of the cutoff frequency characteristics, indicating the importance of giving adequate transport parameters. The method developed here can be easily applied to other devices that have position-dependent band structures.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] K. Okada, A. Nakatani, and K. Horio: "Energy transport modeling of graded AlGaAs/GaAs HBTs : Importance of giving adequate transport parameters" Proceedings of 1997 International Conference on Simulation of Semiconductor Processes and Devices. 51-52 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K. Horio, T. Okada, and A. Nakatani: "Energy transport simulation for graded HBT's : Importance of setting adequate values for transport parameters" IEEE Trans. Electron Devices. 45. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T. Okada and K. Horio: "Study on possible double peaks in cutoff frequency characteristics of AlGaAs/GaAs HBTs by energy transport simulation" VLSI Design. 6. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Okada, A.Nakatani and K.Horio: "Energy transport modeling of graded AlGaAs/GaAs HBTs : Importance of giving adequate transport parameters" Proceedings of 1997 International Conference on Simulation of Semiconductor Processed and Devices. 51-52 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Horio, T.Okada and A.Nakatani: "Energy transport simulation for graded HBT's : Importance of setting adequate values for transport parameters" IEEE Trans.Electron Devices. Vol.45. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Okada and K.Horio: "Study on possible double peaks in cutoff frequency characteristics of AlGaAs/GaAs HBTs by energy transport simulation" VLSI Design. Vol.6. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Okada and K.Horio: "Study on Possible Double Peaks in Cutoff Frequency characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation" Proceedings of the Sth International Workshop on Computationa1 Electronics. (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Horio, T.Okada and A.Nakatani: "Energy Transport Simulation for Graded HBT^1s : Inportance of Setting Adequate Values for Transgport Parameters" IEEE Trans.Electron Devices. Vol.45. (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Okada,A.Nakatani,and K.Horio: "Energy Transport Modeling of Graded AlGaAs/GaAs HBTs : Importance of Giving Adequate Transport Parameters" Proceeding of 1996 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'96). 51-52 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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