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同位体を用いたナノCMOSにおけるシリコン-不純物相互作用の研究

Research Project

Project/Area Number 08J05039
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Applied physics, general
Research InstitutionKeio University

Principal Investigator

清水 康雄  Keio University, 理工学部, 特別研究員(PD)

Project Period (FY) 2008 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2009: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2008: ¥600,000 (Direct Cost: ¥600,000)
Keywordsシリコン / 同位体 / 超格子 / イオン注入 / 拡散 / 半導体デバイス / 二次イオン質量分析法 / アトムプローブ法
Research Abstract

本研究の目的は、ナノスケールのCMOSデバイスに対応するプロセスシミュレータ開発に向け、不純物導入およびその後の熱処理による母体シリコン原子と添加不純物原子の相互作用を調べることである。結論として、シリコン結晶中のホウ素拡散シミュレータに用いる物性値・モデルの決定に至った。不純物原子の活性化およびイオン照射による母体シリコン原子の挙動をさらに厳密に調べるため、以下の実験を遂行した。
1.シリコン中の不純物挙動および活性化メカニズムを調べるため、32ナノメートルサイズ以下のCMOSデバイス開発を推進するIMEC(ベルギー)にて研究を行った。ここで不純物導入として用いた気相ドーピング法は不純物照射による欠陥形成のない手法として注目されており、且つ複雑に立体加工を施した基板に対して均一な導入が可能な手法である。今年度は、シリコン中のホウ素および砒素の活性化のメカニズムを調べた。
2.異なる同位体シリコンの周期構造を二次イオン質量分析法(SIMS)およびアトムプローブ法(AP)を用いて構造評価し、最終的にシリコンに対するSIMSの深さ分解能と分析時におけるミキシングの定量評価、さらにはAPの高分解能性を示す結果を得た。SIMSは試料表面にイオンを照射して削りながら深さ方向の質量分布を得る手法であり、分析時の照射エネルギーがSIMSの分解能を決定する主要パラメータであるため、分解能評価をする上で照射による損傷度合を定量的に知ることは重要である。一方でAPは分析中にミキシングの影響を受けずに原子配列を空間的に知る手法として近年注目されており、同位体を用いた分解能の導出はAPの分野において先行した研究である。この時に用いた同位体シリコン周期構造は、すべてシリコンで構成されているが深さ方向に質量分布を持つことが特長であり、これがSIMSの深さ標準試料として利用可能であることを提案した。

Report

(2 results)
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (24 results)

All 2010 2009 2008

All Journal Article (8 results) (of which Peer Reviewed: 7 results) Presentation (16 results)

  • [Journal Article] Quantitative evaluation of germanium displacement induced by arsenic implantation using germanium isotope superlattices2009

    • Author(s)
      Yoko Kawamura
    • Journal Title

      Physica B : Condensed Matter 404

      Pages: 4546-4548

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Probing the behaviors of point defects in silicon and germanium using isotope superlattices2009

    • Author(s)
      Masashi Uematsu
    • Journal Title

      ECS Transactions 25

      Pages: 51-54

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Atom probe microscopy of three-dimensional distribution of silicon isotopes in ^<28>Si/^<30>Si isotope superlattices with sub-nanometer spatial resolution2009

    • Author(s)
      Yasuo Shimizu
    • Journal Title

      Journal of Applied Physics 106

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices2009

    • Author(s)
      Yasuo Shimizu
    • Journal Title

      Journal of Applied Physics 105

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Silicon isotope superlattices : Ideal SIMS standards for shallow junction characterization2008

    • Author(s)
      Yasuo Shimizu
    • Journal Title

      Applied Surface Science 255

      Pages: 1345-1347

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Film thickness determining method of the silicon isotope superlattices by SIMS2008

    • Author(s)
      Akio Takano
    • Journal Title

      Applied Surface Science 255

      Pages: 1430-1432

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion2008

    • Author(s)
      Miki Naganawa
    • Journal Title

      Applied Physics Letters 93

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon : The influence of SiO_2 films2008

    • Author(s)
      Miki Naganawa
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 6205-6207

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] レーザ支援型アトムプローブ法によるシリコン同位体超格子中の同位体シリコン分布の高分解能測定2010

    • Author(s)
      清水康雄
    • Organizer
      第57回春季応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] シリコンナノCMOS拡散シミュレーションの課題と展望2010

    • Author(s)
      植松真司
    • Organizer
      第57回春季応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices2010

    • Author(s)
      Matty Caymax
    • Organizer
      5th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2010-01-30
    • Related Report
      2009 Annual Research Report
  • [Presentation] Probing the behaviors of point defects in silicon and germanium using isotope superlattices2009

    • Author(s)
      植松真司
    • Organizer
      216th Electrochemical Society Meeting
    • Place of Presentation
      Vienna, Austria
    • Year and Date
      2009-10-05
    • Related Report
      2009 Annual Research Report
  • [Presentation] Evaluation of atomic mixing for silicon atoms in silicon isotope superlattices under cesium and oxygen ion bombardments2009

    • Author(s)
      Mitsuhiro Tomita
    • Organizer
      17th International Conference on Secondary Ion Mass Spectrometry
    • Place of Presentation
      Toronto, Canada
    • Year and Date
      2009-09-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ge同位体超格子を用いた砒素イオン注入によるGe原子のミキシング評価2009

    • Author(s)
      河村踊子
    • Organizer
      第70回秋季応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Quantitative evaluation of germanium displacement induced by arsenic implantation using germanium isotope superlattices2009

    • Author(s)
      河村踊子
    • Organizer
      25th International Conference on Defects in Semiconductors
    • Place of Presentation
      St Petersburg, Russia
    • Year and Date
      2009-07-23
    • Related Report
      2009 Annual Research Report
  • [Presentation] Deactivation mechanism of ion-implanted arsenic in germanium2009

    • Author(s)
      植松真司
    • Organizer
      25th International Conference on Defects in Semiconductors
    • Place of Presentation
      St Petersburg, Russia
    • Year and Date
      2009-07-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] Absence evidence of transient enhanced diffusion in ion-implanted Ge revealed by isotope superlattices2009

    • Author(s)
      植松真司
    • Organizer
      European Materials Research Society 2009 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 同位体超格子を用いたSi格子間原子のSi中拡散への寄与の精密化2009

    • Author(s)
      植松真司
    • Organizer
      第56回春季応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] CMOS process monitoring using silicon isotopes [Invited talk]2008

    • Author(s)
      Yasuo Shimizu
    • Organizer
      Companion Workshop for 2008 International Conference on Simulation of Semiconductor Processes and Devices
    • Place of Presentation
      Hakone, Japan
    • Year and Date
      2008-09-08
    • Related Report
      2008 Annual Research Report
  • [Presentation] Ge同位体超格子を用いたGe自己拡散と砒素拡散の同時観測によるGe中の拡散機構の解明2008

    • Author(s)
      長縄美樹
    • Organizer
      第69回秋季応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] 過渡的増速拡散中におけるシリコン格子間原子の挙動2008

    • Author(s)
      清水康雄
    • Organizer
      第69回秋季応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Accurate determination of the intrinsic diffusivities of B, P, and As in Si : The influence of SiO_2 films2008

    • Author(s)
      Yoko Kawamura
    • Organizer
      Materials Research Society International Materials Research Conference (China)
    • Place of Presentation
      Chongqing, China
    • Year and Date
      2008-06-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] Nanoscale implantation-induced mixing and transient enhanced diffusion of silicon revealed by isotope superlattices2008

    • Author(s)
      Yasuo Shimizu
    • Organizer
      European Materials Research Society 2008 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2008-05-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Process monitoring using silicon isotope superlattices [Invited talk]2008

    • Author(s)
      Kohei M. Itoh
    • Organizer
      6th EU-Japan Joint Symposium on Plasma Processing
    • Place of Presentation
      Okinawa, Japan
    • Year and Date
      2008-04-22
    • Related Report
      2008 Annual Research Report

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Published: 2008-04-01   Modified: 2024-03-26  

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