• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

STUDY ON MECHANISM OF CLUSTER FORMATION THROUGH ELECTRONIC SPUTTERING INDUCED BY SWIFT HEAVY IONS

Research Project

Project/Area Number 09480099
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field エネルギー学一般・原子力学
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

IMANISHI Nobutsugu  Kyoto University, Graduate School of Engineering, Department of Nuclear Engineering, Professor, 工学研究科, 教授 (10027138)

Co-Investigator(Kenkyū-buntansha) IMAI Makoto  Kyoto University, Graduate School of Engineering, Department of Nuclear Engineering. Res. Associate, 工学研究科, 助手 (60263117)
ITOH Akio  Kyoto University, Graduate School of Engineering, Department of Nuclear Engineering. Associate Prof., 工学研究科, 助教授 (90243055)
Project Period (FY) 1997 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1999: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1998: ¥3,000,000 (Direct Cost: ¥3,000,000)
KeywordsElectronic Sputtering / Heavy Ion Beam / Cluster Ion / Multiple Monoatomic Ion / Emission Yield / Emission Energy / Time of Flight Measurement / Irradiation Effect / 単原子多価イオン / 2次イオン初期エネルギー / 放出角度分布
Research Abstract

The yield and emission energy distribution of secondary ions have been systematically measured for Al Si AlィイD22ィエD2OィイD23ィエD2 and SiOィイD22ィエD2 bombarded by Si, Cu and Ag ions at an impact energy region of MeV, where the electronic stopping power dominates over the nuclear stopping power. Singly charged cluster ions as well as multiply charged monatomic ions were observed in the case of the insulator targets. Dominant species of the cluster ions were Si(SiOィイD22ィエD2)ィイD1+ィエD1ィイD2xィエD2 and SiO(SiOィイD22ィエD2)ィイD1+ィエD1ィイD2xィエD2 (x is an integer )for SiOィイD22ィエD2 and (AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2, AlO(AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2and AlィイD22ィエD2OィイD22ィエD2(AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2 for AlィイD22ィエD2OィイD23ィエD2. For the conductive targets only singly and multiply charged monatomic ions were observed. The obtained emission energy for atomic ions depends not only on projectiles but also on the electric charge q. The energy distribution of the atomic ions emitted from the conductive targets is asymmetric extending to a high-energy side and is rather high compared with that for the insulators. The energy distribution for cluster ions is very narrow compared with that for the atomic ions. The mean energy for the cluster ions hardly depends on the size of cluster. These results combined with the yield dependence on the electronic stopping power show that the atomic ions are produced from the hot track region through the sequential process of ionization and recoil caused by the projectiles and forced to move by the electric repulsive force. The cluster ions are formed in the periphery of the track region.

Report

(4 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • Research Products

    (27 results)

All Other

All Publications (27 results)

  • [Publications] 今西信嗣: "Cluster-Ion Formation by Heavy-Ion-Induced Electronic Sputtering"Proceedings of 14 International Conference on the Application of Accelerators in Research and Industry. 507-510 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "Electronic Sputtering Process of SiO2under Heavy Ion Bombardment"Nuclear Instruments and Methods in Physics Research B. 135. 424-429 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "Neutralization of Intermediate-Velocity L1 Emerging from Cs-and Oxygen-Covered Si(100) and GaAs(110) Surfaces"Nuclear Instruments and Methods in Physics Research B. 135. 413-418 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "Crystallographic Azimuthal-Angle Dependence of the Neutral Fraction of Hydrogen Emerging from GaAs(110)"Nuclear Instruments and Methods in Physics Research B. 1135-1139 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "Electronic Sputtering from an SiO2 Target Bombarded by Heavy Ions"Proceedings of the 2nd Japan-Russia Symposium on Interaction of Fast Charged Particles. 94-105 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "TOF Study on Electronic Sputtering of SiO2 Bombarded by MeV Energy Heavy Ions"Atomic Collision Research in Japan Progress Report. 24. 52-53 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "Electronic Sputtering from an SiO2 Target Bombarded by Heavy Ions"Proceedings of the 15th Inter. Conf. on the Application of Accelerators in Research and Industry. 396-400 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "Emission Energy Distribution of Secondary Ions Produced through the Electronic Sputtering Process under Heavy Ion Bombardment"Nuclear Instruments and Methods in Physics Research B. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "Cluster-Ion Formation by Heavy-Ion-Induced Electronic Sputtering"Proceedings of 14ィイD1thィエD1 International Conference on the Application of Accelerators in Research and Industry. 507-510 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "Electronic Sputtering Process of SiOィイD22ィエD2 under Heavy Ion Bombardment"Nuclear Instruments and Methods B. 135. 424-429 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "Neutralization of Intermediate-Velocity Li Emerging from Cs-and Oxygen-Covered Si (100) and GaAs (110) Surfaces"Nuclear Instruments and Methods B. 135. 413-418 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "Crystallographic Azimuthal-Angle Dependence of the Neutral Fraction of Hydrogen Emerging from GaAs (110)"Nuclear Instruments and Methods B. 136. 1135-1139 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "Electronic Sputtering from a SiOィイD22ィエD2 Target Bombarded by Heavy Ions"Proceedings of the 2nd Japan-Russia Symposium on Interaction of Fast Charged Particles with Solids. 94-105 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "TOF Study on Electronic Sputtering of SiOィイD22ィエD2 Bombarded by MeV Energy Heavy Ions."Atomic Collision Research in Japan, Progress Report. 24. 52-53 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "Electronic Sputtering from an SiOィイD22ィエD2 Target Bombarded by Heavy Ions"Proceedings of 15ィイD1thィエD1 International Conference on the Applicationrs in Research and Industry. 396-400 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Imanishi: "Emission Energy Distribution of Secondary Ions Produced through the Electronic Sputtering Process under Heavy Ion Bombardment"Nuclear Instruments and Methods B. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 今西信嗣: "Electronic Sputtering from an SiO_2 Target Bombarded by Heavy Ions"Proceedings of the 15th Inter. Conf on the Application of Accelerators in Research and Industry. 396-400 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 今西信嗣: "Emission Energy Distribution of Secondary Ions Produced through the Electronic Sputtering Process under Heavy Ion Bombardment"Nuclear Instruments and Methods in Physics Research B. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 今西信嗣: "Electronic Sputtering Process of SiO_2 under Heavy Ion Bombardment" Nuclear Instruments and Methods in Physics Research B. 135. 424-429 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 今西信嗣: "Neutralization of Intermediate-Velocity Li Emerging from Cs- and Oxygen-Covered Si(100) and GaAs(110) Surfaces" Nuclear Instruments and Methods in Physics Research B. 135. 413-418 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 今西信嗣: "Crystallographic Azimuthal-Angle Dependence of the Neutral Fraction of Hydrogen Emerging from GaAs(110)" Nuclear Instruments and Methods in Physics Research B. 136. 1135-1139 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 今西信嗣: "Electronic Sputtering from an SiO_2 Target Bombarded by Heavy Ions" Proceedings of the 2^<nd> Japan-Russia Symposium on Interaction of Fast Charged Particles. 94-105 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 今西信嗣: "Electronic Sputtering from an SiO_2 Target Bombarded by Heavy Ions" Proceedings of the 15th Inter.Conf.on the Application of Accelerators in Research and Industry. (in press). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] 太田英之: "TOF Study on Electronic Sputtering of SiO_2 Bombarded by MeV Energy Heavy Ions" Atomic Collision Research in Japan,Progress Report. 24. 52-53 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 今西信嗣: "Electronic Sputtering Process of SiO_2 under Heavy Ion Bombardment" Nuclear Instruments and Methods in Physics Research. B 135. 424-429 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 今西信嗣: "Neutralization of Intermediate-Velocity Li Emerging from Cs- and Oxygen-Covered Si (100) and GaAs (110) Surfaces" Nuclear Instruments and Methods in Physics Research. B 135. 413-418 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 今西信嗣: "Crystallographic Azimuthal-Angle Dependence of the Neutral Fration of Hydrogen Emerging from GaAs (110)" Nuclear Instruments and Methods in Physics Research. B 136. 1135-1139 (1998)

    • Related Report
      1997 Annual Research Report

URL: 

Published: 1998-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi