Lower-Temperature Deposition of Poly-crystalline Silicon Film by High-Density Plasma
Grant-in-Aid for Scientific Research (B)
|Allocation Type||Single-year Grants|
|Research Institution||Nagoya University|
TOYODA Hirotaka Nagoya Univ., Electrical Eng., Assistant Prof., 工学研究科, 講師 (70207653)
KITAGAWA Masatoshi Matsushia Electric, Senior Researcher, 中央研究所, 主任研究員
NAKAMURA Keiji Chubu Univ., Electrical Eng., Associate Prof., 工学部, 助教授 (20227888)
SUGAI Hideo Nagoya Univ., Electrical Eng., Prof., 工学研究科, 教授 (40005517)
|Project Period (FY)
1997 – 1999
Completed(Fiscal Year 1999)
|Budget Amount *help
¥6,700,000 (Direct Cost : ¥6,700,000)
Fiscal Year 1999 : ¥700,000 (Direct Cost : ¥700,000)
Fiscal Year 1998 : ¥2,000,000 (Direct Cost : ¥2,000,000)
Fiscal Year 1997 : ¥4,000,000 (Direct Cost : ¥4,000,000)
|Keywords||poly-crystalline silicon / inductively-coupled plasma / lower temperature deposition / high-density plasma / high speed deposition / large area deposition|
Poly-crystalline silicon is one of candidate of the future materiel for thin film transistor. However, deposition technique which satisfies large area, high-speed, lower temperature is not yet established. Purpose of this research is to establish new technique which meets with the above requirement.
Followings are main results of this research project.
1) Experimental demonstration of poly-crystalline silicon by inductively-coupled plasma.
By using an internal-antenna inductively-coupled plasma, we have demonstrated deposition of poly-crystalline silicon deposition. Film evaluation is carried out by using X-ray diffraction analysis (XRD) and transparent electron microscopy (TEM). The XRD result have indicated that the crystalline of the film is (220) oriented and that the grain size is up to 150nm. The TEM result have shown that the film has columnar morphology.
2) Investigation of ionic composition in the plasma
By using quadrupole mass spectrometer, we have investigated ionic composition in the high-density silane plasma, and have found that the SiHx+ ionic component can be sufficiently high enough to explain the film deposition rate. Furthermore, it is also found that the SiHx+ ionic composition is roughly constant irrespective to silane flow rate ratio. This suggests that the crystallization of the film does not depend on the SiHx+ ionic composition.
3) Reproducibility of film crystallization
We have found that the reproducibility of the film crystallization can be improved by controlling the vessel wall condition. This suggests that the key species (presumably H atom) for the film crystallization critically depends on the wall condition.
Research Output (12results)