|Budget Amount *help
¥2,200,000 (Direct Cost : ¥2,200,000)
Fiscal Year 1999 : ¥600,000 (Direct Cost : ¥600,000)
Fiscal Year 1998 : ¥700,000 (Direct Cost : ¥700,000)
Fiscal Year 1997 : ¥900,000 (Direct Cost : ¥900,000)
In this study, low resistive (electrical conductive) diamond-like carbon (DLC) films of about 1 Ω cm were formed for their applications to the coating of Si field emitters. By the control of parameters such as deposition temperature etc., the fabrication method and physical properties of electrical conductive amorphous diamond films, i.e. DLC films, with high hardness were studied. By the application of these DLC films to the coating of Si field emitters, good I-V characteristics were obtained.
In this experiment, by using isobutane (i-CィイD24ィエD2HィイD210ィエD2) including 4 carbon atoms in one molecule, high speed deposition of DLC films was studied. To lower the film resistivity, NィイD22ィエD2 gas was introduced as n-type dopant. As a result, a film with deposition rate of 1900Å/min and low resistivity of 0.17 Ω cm was obtained at wafer temperature of 160℃ and rf powers of 1kW/1kW to upper and lower electrodes. Film hardness was over 1700kg/mmィイD12ィエD1, which was higher than 1340kg/mmィイD12ィエD1 of glass (SiOィイD22ィエD2). By FT-IR spectrum measurement, absorption spectra of C-N, C=N and C≡N stretching modes were observed, and N atoms inclusion in DLC films was confirmed. By application of these films to the coating of Si field emitters, the threshold voltage of field emission was reduced from 550V to 360V, and random noise was reduced largely. Through this research, it was found that the application of electrical conductive DLC films to the coating of Si field emitters was effective to make high performance field emitters.