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Fabrication of quantum dot lasers

Research Project

Project/Area Number 10355004
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied optics/Quantum optical engineering
Research InstitutionUniversity of Tokyo

Principal Investigator

ARAKAWA Yasuhiko  Institute of Industrial Science, University of Tokyo, Professor, 生産技術研究所, 教授 (30134638)

Co-Investigator(Kenkyū-buntansha) SOMEYA Takao  Research Center for Advanced Science and Technology, 先端科学技術研究センター, 講師 (90292755)
HIRAKAWA Kazuhiko  Institute of Industrial Science, University of Tokyo, Associate Professor, 生産技術研究所, 助教授 (10183097)
SAKAKI Hirouki  Institute of Industrial Science, University of Tokyo, Professor, 生産技術研究所, 教授 (90013226)
IMAI Hajime  Fujitsu Labs, Director, 所長代理
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥33,700,000 (Direct Cost: ¥33,700,000)
Fiscal Year 2000: ¥8,100,000 (Direct Cost: ¥8,100,000)
Fiscal Year 1999: ¥10,800,000 (Direct Cost: ¥10,800,000)
Fiscal Year 1998: ¥14,800,000 (Direct Cost: ¥14,800,000)
KeywordsQuantum dots / MOCVD / MBE / Semicondcutor lasers / Self-assembling growth / GaN / Quantum effects / InAs / 半導体 / ナノ構造
Research Abstract

This project is organized to establish device technologies aiming at bringing the quantum dot lasers into commercial market in thenear future.
We succeeded in optimizing self-assembled InAs quantum dots at the wavelength range from 1.3 -1.5 mm which is very important for optical communication applications. Finally 1.52 mm wavelength light emission was achieved by embedding InAs quantum dots not by GaAs but by InGaAs to suppress strain effects. In addition, quantum dot laser structures involving photonic crystals by developing selective era growth technique.
We have shown theoretically improvement ratio by introducing quantum dots in GaN-bases systems is much bigger than that in GaAs systems. In addition we established growth condition for blue light emitting GaN-based quantum dot for laser applications. Finally we succeeded in operating InGaN quantum dot lasers at room temperature by optical pumping method. We also show GaN quantum dots on A1N for UV laser applications.
In summary, we have succeeded in fabricating quantum dot lasers and establishing material growth technology for future photonic network IT technologies.

Report

(4 results)
  • 2001 Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (176 results)

All Other

All Publications (176 results)

  • [Publications] K.Tachibana, T.Someya, Y.Arakawa: "MOCVD Growth of Nanometer-scale InGaN Self-assembling Quantum Dots"Iop Conference Series. (1999)

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      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.C.Harris, H.Brisset, T.Someya, Y.Arakawa: "Growth Condition Dependence of the Photoluminescence Properties of InxGal-xN/InyGal-yN Multiple Quantum Wells Grown by MOCVD"Accepted for publication in Jpn. J. Appl. Phys. (1999). Part1. (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] S.Iwamoto, M.Nishioka, T.Someya, Y.Arakawa, K.Fukutani, T.Shimura, K.Kuroda: "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells"Opt. Lett.. vol.24,no.5. (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] R.Cingolani, F.Sogawa, Y.Arakawa, R.Rinaldi, M.DeVittorio, A.Passaseo, A.Taurino, M.Catalano: "Microphotoluminescence spectroscopy of vertically stacked InxGal-xAs/GaAsquantum wires"Phys Rev B. Vol.58,No.4. 1962-1966 (1998)

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      2001 Final Research Report Summary
  • [Publications] R.Cingolani, F.Sogawa, Y.Arakawa, L.Vanzetti, L.Sorba, A.Franciosi: "Microprobe spectroscopy of localized exciton states in II-VI quantum wells"Appl Phys Let. Vol.73,No.4. 148-150 (1998)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Suzuki, M.S.Minsky, S.B.Heisher, R.A.Hogg, E.L.Hu, J.E.Bowers, Y.Arakawa: "Radiative Lifetime of Spatially indirect Exciton in Type-II GaSb/GaAs Self-assembled Quantum Dots"IOP Publishing Co. in April(1999). (1999)

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      2001 Final Research Report Summary
  • [Publications] K.Suzuki, R.A.Hogg, Y.Arakawa: "Stractual and optical properties of type II self-assembled GaSb/GaAs quantum dots grown by molecular beam epitaxy"Submitted to Journal of Appl Phys. (1999)

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      2001 Final Research Report Summary
  • [Publications] K.Suzuki, R.A.Hogg, S.Kako, Y.Arakawa, M.S.Minsky, E.Hu, J.B.Bowers: "Radiative lifetimes of spatially indirect excitons in type-II GaSb/GaAs self-assembled quantum dots"I Submitted to Appl Phys Let. (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] B.Shen, T.Someya, O.Moriwaki, Y.Arakawa: "Effect of carrier confinement on photoluminescence from modulation-doped Al(x)Ga(x-1)N/GaN heterostructures"Applied Physics Letters. Vol.76,No.6. 679-681 (2000)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] B.Shen, T.Someya, Y.Arakawa: "Influence of strain relaxation of the Al(x)Ga(1-x)N barrier on transport properties of the two-dimensional electron gas in modulation-doped Al(x)Ga(1-x)N/GaN heterostructures"Applied Physics Letters. vol.76,No.19. 2746-2748 (2000)

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      2001 Final Research Report Summary
  • [Publications] Y.Arakawa, T.Someya, K.Tachibana: "Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers"LEICE TRANS. ELECTRON.. (Invited)Vol.E83-C,No.4. (2000)

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      2001 Final Research Report Summary
  • [Publications] Y.Arakawa, K.Okamoto: "Advanced optical devices for next generation high-speed communication systems and photonic networks"IEICE Trans. Electron.. vol.E83-C. 787-788 (2000)

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      2001 Final Research Report Summary
  • [Publications] Y.Toda, T.Sugimoto, M.Nishioka, Y.Arakawa: "Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots"Applied Physics Letters. Vol.76,No.26. 3887-3889 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.Tatebayashi, S.Ishida, M.Nishioka, T.Someya, Y.Arakawa: "Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD"1999 International Conference on Solid State Devices and Materials, Tokyo, Japan. D-9-2. 414-415 (1999)

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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, Y.Arakawa: "Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition"Applied Physics Letters. Vol.74,No.3. 383-385 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, Y.Arakawa: "MOCVD Growth of Nanometer-scale InGaN Self-assembling Quantum Dots"IOP Conference Series. Vol.162. 735-739 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, Y.Arakawa, R.Werner, A.Forchel: "Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser"Applied Physics Letters. Vol.75,No.17. 2605-2607 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, Y.Arakawa: "MOCVD Growth and Optical Characterization of Stacked InGaN Quantum Dots for Laser Applications"Physica Status Solidi (a). Vol.176. 629-633 (1999)

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      2001 Final Research Report Summary
  • [Publications] Hiroaki Watabe, Kaoru Arakawa, Yasuhiko Arakawa: "A Nonlinear Digital Filter for Beautifying Facial Images"The Journal of Three Dimensional Images. vol.13-no.3. 41-46 (1999)

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      2001 Final Research Report Summary
  • [Publications] J.C.Harris, S.Kako, T.Someya, Y.Arakawa: "Screening of the Polarization Field in InGaN Single Quantum Wells"Phys. Stat. Sol. (b) 216. 423 (1999)

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      2001 Final Research Report Summary
  • [Publications] J.C.Harris, H.Brisset, T.Someya, Y.Arakawa: "Growth Condition Dependence of the Photoluminescence Properties of InxGal-xN/InyGa-yN Multiple Quantum Wells Grown by MOCVD"Jpn. J. Appl. Phys. 38. 2613 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] Y.Toda, O.Moriwaki, M.Nishioka Y.Arakawa: "Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots, based on the existence of continuum states"Physical Review Letters 82. 4114 (1999)

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      2001 Final Research Report Summary
  • [Publications] Y.Toda, K.Suzuki, S.Shinomori, Y.Arakawa: "Near-field spectroscopy of a single self-assembled InAs quantum dots : observation of energy relaxation process"Microelectronic Engineering 47. 111-113 (1999)

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      2001 Final Research Report Summary
  • [Publications] T.Yamamoto, S.Inoue, M.Ozaki, N.Nishitani: "Distortion of the Outer Boundary of the Closed Region in the Tsyganenko Magnetic Field Model"Adv. Polar Upper Atmos. Res.. Vol.13. 11-26 (1999)

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      2001 Final Research Report Summary
  • [Publications] T.Yamamoto, S.Inoue, M.Ozaki: "Latitudinal Structure of the Nightside Region 1 Field-Aligned Current Observed from the EXOS-D Satellite"Adv. Polar Upper Atmos. Res.. Vol.13. 27-40 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Suzuki, R.A.Hogg, Y.Arakawa: "Stractual and Optical Properties of Type II Self-assembled GaSb/GaAs Quantum Dots Grown by Molecular Beam Epitaxy"Journal of Applied Physics. vol.85. 8349-8352 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Suzuki, Y.Arakawa: "Growth of Stacked GaSb/GaAs Self-assembled Qunatum Dots by Molecular Beam Epitaxy"Journal of Crystal Growth. VOl 201/202. 1205-1208 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Suzuki, M S.Minsky, S.B.Fleisher, R.A.Hogg, E.L.Hu, J.E.Bowers, Y.Arakawa: "Radiative Lifetime of Spatially Indirect Exciton in Type-II GaSb/GaAs Self-assembled Quantum Dots"IOP Conference Series. Vol 162. 475-480 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] N.Kamata, J.M.Zanardi Ocampo, K.Hoshino, K.Yamada, M.Nishioka, T.Someya, Y.Arakawa: "Below-gap spectroscopy of semiconductor quantum wells by two-wavelength excited photoluminescence (TWEPL)"Recent Research Developments in Quantum Electronics, 1,(Transworld Research). 123-135 (1999)

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      2001 Final Research Report Summary
  • [Publications] S.Iwamoto, H.Kageshima, T.Yuasa, M.Nishioka, T.Someya, Y.Arakawa, K.Fukutani, T.Shimura, K.Kuroda: "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells"Opt. Lett.. Vol.24,No.5. 321-323 (1999)

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      2001 Final Research Report Summary
  • [Publications] T.Saito, Y.Arakawa: "Atomic structure and phase stability of InxGal-xN random alloys calculated using a valence-force-field method"Physical Review B. Vol.60. 1701 (1999)

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      2001 Final Research Report Summary
  • [Publications] T.Someya, R.Werner, A.Forchel, M.Catalano, R.Cingolani, Y.Arakawa: "Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities"Science. Vol 285,No.5435. 1905-1906 (1999)

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      2001 Final Research Report Summary
  • [Publications] T.Someya, Y.Arakawa: "Microphotoluminescence Intensity Images of InGaN Single Quantum Wells"Japanese Journal of Applied Physics. Vol.38,No.11A. L1216-L1218 (1999)

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      2001 Final Research Report Summary
  • [Publications] T.Someya, Y.Arakawa, R.Werner, A.Forchel: "Growth and structural characterization of InGaN vertical cavity surface emitting lasers operating at room temperature"Physica Status Solidi 176. 63-66 (1999)

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      2001 Final Research Report Summary
  • [Publications] B.Shen, T.Someya, M.Nishioka, Y.Arakawa: "Influence of AlxGal-xN Thickness on Transport Properties of Two Dimensional Electron Gas in Modulation Doped AlxGal-xN/GaN Single Heterostructures"Physica Status Solidi (b) 216. No.1. 755-759 (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] K.Suzuki, R.A.Hogg, S.Kako, Y.Arakawa M.S.Minsky, S.B.Fleischer, E.Hu, J.E.Bowers: "Radiative lifetimes of spatially indirect excitons in type-II GaSb/GaAs self-assembled quantum dots"Appl Phys Let. (1999)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Hajime Nakayama, Yasuhiko Arakawa: "Phonon bottleneck in quantum dots : Role of lifetime of the confined optical phonons"Physical Review B 59. 5069-5073 (1999)

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      2001 Final Research Report Summary
  • [Publications] R.Cingolani, R.Rinaldi, H.Lipsanen, M.Sopanen, R.Virkkala, K.Maijah, J.Tulkki, J.Ahopelto, K.Uchida, N.Miura, Y.Arakawa: "Electron-Hole Correlation in Quantum Dots under a High Magnetic Field (up to 45 T)"Physical Review Letters--December 6, 1999 --. Volume 83. 4832-4835 (1999)

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  • [Publications] Xin-Qi Li, Hajime Nakayama, Y.Arakawa: "Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck"Issue Jpn. J. Appl. Phys. 38. 473 (1999)

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      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Y.Arakawa: "Confined Optical Phonons in Semiconductor Quantum Dots"Solid State Commun. 109, 351 (1999). (1999)

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      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Hajime Nakayama, Y.Arakawa: "Phonon Decay and Its Impact on Carrier Relaxation in Semiconductor Quantum Dots"The Proceedings of the 24th International Conference on the Physics of Semiconductors (World Scientific). (1999)

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      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Y.Arakawa: "Optical linewidths in an individual quantum dot"Phys. Rev. B. {\bf 6O}, 1915 (1999). (1999)

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      2001 Final Research Report Summary
  • [Publications] J.C.Harris, T.Someya, K.Hoshino, S.Kako, Y.Arakawa: "Photoluminescence of GaN Quantum Wells with AlGaN Barriers of Hight Aluminium Content"Physica. stat. sol. (a) 180, 339. (2000)

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      2001 Final Research Report Summary
  • [Publications] J.C.Harris, T.Someya, S.Kako, K.Hoshino, Y.Arakawa: "Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells"Applied Physics Letters. Vol.77,No.7. 1005-1007 (2000)

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      2001 Final Research Report Summary
  • [Publications] T.Saito: "Electronic structure of (311)-InAs monolayers embedded in GaAs"Superlattices and Microstructures 22, 1999. (1999)

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      2001 Final Research Report Summary
  • [Publications] T.Yamamoto, S.Inoue, M.Ozaki: "On the limitation of the current sheet approximation in estimation of the northward Bz associated field-aligned currents"J. Geophys. Res.. Vol.105,No.A9. 21143-21157 (2000)

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      2001 Final Research Report Summary
  • [Publications] K.Hoshino, J.M.Zariardi Ocampo, N.Kamata, K.Yamada, M.Nishioka, Y.Arakawa: "Absence of nonradiative recombination centers in Modulation-doped quantum wells revealed by two-wavelength excited photoluminescence"Physica E. Vol.7,No.3-4. 563-566 (2000)

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      2001 Final Research Report Summary
  • [Publications] Y.Toda, T.Sugimoto, M.Nishioka, Y.Arakawa: "Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots"Appl. Phys. Lett.. Vol.76,No.26. 3887-3889 (2000)

    • Description
      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] Y.Toda, Y.Arakawa: "Near-field spectroscopy of a single InGaAs self-assembled quantum dots"IEEE Journal of Selected Topics in Quantum electronics. Vol.6,No.3. 528-533 (2000)

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      2001 Final Research Report Summary
  • [Publications] Y.Toda, O.Moriwaki, M.Nishioka, Y.Arakawa: "Resonant Raman scattering of optical phonons in self-assembled quantum dots"Phisica E. Vol.8. 328-332 (2000)

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      2001 Final Research Report Summary
  • [Publications] O.Moriwaki, T.Someya, K.Tachibana, S.Ishida, Y.Arakawa: "Narrow photoluminescence peaks from localized states in InGaN quantum dot structures"Appl. Phys. Lett.. Vol.76,No.17. 2361-2363 (2000)

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      2001 Final Research Report Summary
  • [Publications] K.Tachibaim, T.Someya, R.Werner, A.Forchel, Y.Arakawa: "MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature"Physica E. vol.7,No.3-4. 944-948 (2000)

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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, S.Ishida, Y.Arakawa: "Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature"Appl. Phys. Lett.. Vol.76,No.22. 3212-3214 (2000)

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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, Y.Arakawa: "Growth of InGaN self-assembled quantum dots and their application to lasers"IEEE J. Selected Topics in Quantum Electronics. Vol.6,No.3. 475-481 (2000)

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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, S.Ishida, Y.Arakawa: "Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images"J. Crystal Growth. Vol.221. 576-580 (2000)

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      2001 Final Research Report Summary
  • [Publications] K.Tachibana, T.Someya, S.Ishida, Y.Arakawa: "High-density InGaN quantum dots fabricated by selective MOCVD growth"IPAP Conference Series1. 417-420 (2000)

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      2001 Final Research Report Summary
  • [Publications] J.Tatebayashi, S.Ishida, M.Nishioka, T.Someya, Y.Arakawa: "Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD"Jpn. J. of Appl. Phys.. vol.39,part1,No.4B. 2344-2346 (2000)

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      2001 Final Research Report Summary
  • [Publications] J.Tatebayashi, M.Nishioka, T.Someya, Y.Arakawa: "Area-controlled growth of InAs Quantum dots and improvement of density and size distribution"Appl. Phys. Lett.. Vol.77,No.21. 3382-3384 (2000)

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      2001 Final Research Report Summary
  • [Publications] T.Someya, K.Hoshino, J.C.Harris, K.Tchibana, Y.Arakawa: "Photoluminescence from sub-monolayer-thick GaN/AIGaN quantum wells"Applied PhysicsLetters. Vol.77,No.9. 1336-1338 (2000)

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      2001 Final Research Report Summary
  • [Publications] T.Someya, K.Hoshino, J.C.Harris, K.Tachibana, S.Kako, Y.Arakawa: "Emission at 247 nm from GaN quantum wells grown by MOCVD"MaterialResearch Society Symposium Proceedings. Vol.595. W12.8.1-W12.8.5 (2000)

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      2001 Final Research Report Summary
  • [Publications] Hiroaki Watabe, Kaoru Arakawa, Yasuhiko Arakawa: "Nonlinear Inverse Filter Using ε-Filter and Its Applications to Image Restoration"IEICE Trans. Fundamentals. vol.E83-A,no.2. 283-290 (2000)

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      「研究成果報告書概要(和文)」より
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      2001 Final Research Report Summary
  • [Publications] J.M.Z.Ocampo, N.Kamata, K.Hoshino, M.Hirasawa, K.Yamada, M.Nishioka, Y.Arakawa: "Spectroscopic discrimination of nonradiative centers in quantum wells by two-wavelength excited photoluminescence"J. CrystalGrowth. Vol.210. 238-241 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.M.Z.Ocampo, N.Kamata, K.Hoshino, K.Endoh, K.Yamada, M.Nishioka, T.Someya, Y.Arakawa: "Spectroscopy of nonradiative recombination centers in quantum wells by two-wavelength excited photoluminescence"J. Lumin.. Vol.87-89. 363-365 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Z.W.Zheng, B.Shen, R.Zhang, Y.S.Gui, C.P.Jiang, Z.X.Ma, S.L.Giuo, Y.SHi, TSOmeya, Y.Arakawa: "Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AIGaN/GaN heterostructures"Phys. Rev. B, 62. R7739-R7745 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R.Cingolani, M.De Giorgi, R.Rinaldi, H.Lipsanen, M.Sopanen, K.Uchida, N.Miura, Y.Arakawa: "Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)"Physica E. vol.7,No.3-4. 346-349 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Ph.Lelong, K.Suzuki, G.Bastard, H.Sakaki, Y.Arakawa: "Enhancement of the Coulomb correlations in typeII quantum dots"Physica E. vol.7,No.3-4. 393-397 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B.Shen, T.SOmeya, O.Moriwali, Y.Arakawa: "Photoluminescence from two-dimensional electron gas in modulation-doped AIGaN/GaN heterostructures"Physica E. vol.7,No.3-4. 939-943 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Y.Arakawa: "Single qubit from two coupled quantum dots : An approach to semiconductor quantum computations"Phys. Rev. A. Vol.63 012302. (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Arakawa: "Progress in GaN-based Quantum Dots and Heterostructures"International Workshop on Novel Gain Materials, Wueraburug. (Invited). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Arakawa, T.Someya, K.Tachibana: "Progress in Growth and Physics of Nitride-Based Quantum Dots (Editor's Choice)"Phys. Stat. Sol (B), 224. 1-11 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Suzuki, Y.Arakawa: "Near 1.3mm EMission at Room Temeperature from mAsS/GaAs Self-Assembled Quantum Dots on GaAs Substrates"phys. stat. sol. (b) 224. 139-142 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Arakawa, T.Someya, k.Tachibana: "Progress in Growth and Physics of Nitride-Based Quantum Dots"phys. Sta. Sol. (b) 224. 1-11 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R.Rinaldi, M.DeVittorio, R.Cingolani, U.Hohenester, E.Molinari, H.Lipsane, J.Tulkki, J.Ahopelto, K.Uchida, N.Miura, Y.Arakawa: "Correlation Effects in Strain-Induced Quantum Dots"phys. Sta. Sol. (b) 224. 1-11 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "MOCVD Growth of Nanometer-scale InGaN Self-assembling Quantum Dots"IOP Conference Series. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.C. Harris, H. Brisset, T. Someya and Y. Arakawa: "Growth Condition Dependence of the Photoluminescence Properties of InxGal-xN/lnyGal-yN Multiple Quantum Wells Grown by MOCVD"Accepted for publication, in Jpn. J. Appl. Phys. Part 1. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Iwamoto, H. Kageshima, T. Yuasa, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda: "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells"Opt. Lett.. vol. 24, no. 5. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R. Cingolani, F. Sogawa, Y. Arakawa, R. Rinaldi, M. DeVittorio, A. Passaseo, A. Traurino, M. Catalano, and L. Vasanelli: "Microphotoluminescence spectroscopy of vertically stacked InxGal-xAs/GaAsquantum wires"Phys. Rev. B. Vol. 58, No. 4. 1962-1966 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R. Cingolani, F. Sogawa, and Y. Arakawa, L. Vanzetti, L. Sorba, A. Franciosi: "Microprobe spectroscopy of localized exciton states in II-VI quantum wells"Appl. Phys. Let.. Vol. 73, No. 4. 148-150 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, R. A. Hogg, and Y. Arakawa: "Stractual and optical properties of type II self-assembled GaSb/GaAs quantum dots grown by molecular beam epitaxy"Journal of Appl Phys.. (Submitted). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, R. A. Hogg, S. Kako, Y. Arakawa, M. S. Minsky, S. B. Fleischer, E. Hu, and J. E. Bowers: "Radiative lifetimes of spatially indirect excitons in type-II GaSb/GaAs self-assembled quantum dots"Appl. Phys. Let.. (Submitted). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B. Shen, T. Someya, O. Moriwaki, and Y. Arakawa: "Effect of carrier confinement on photoluminescence from modulation-doped Al(x)Ga(x-1)N/GaN heterostructures"Applied Physics Letters. Vol. 76, No. 6. 679-681 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B. Shen, T. Someya, and Y. Arakawa: "Influence of strain relaxation of the Al(x)Ga(1-x)N barrier on transport properties of the two-dimensional electron gas in modulation-doped Al(x)Ga(1-x)N/GaN heterostructures"Applied Physics Letters. Vol. 76, No. 19. 2746-2748 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Arakawa, T. Someya, and K. Tachibana (Invited): "Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers"IEICE TRANS. ELECTRON. Vol. E83-C, No. 4. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Arakawa, K. Okamoto: ""Advanced optical devices for next generation high-speed communication systems and photonic networks""IEICE Trans. Electron. vol. E83-C. 787-788 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Toda, T. Sugimoto, M. Nishioka, and Y. Arakawa: "Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots"Applied Physics Letters. Vol. 76, No. 26. 3887-3889 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, and Y. Arakawa: "Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD"1999 International Conference on Solid State Devices and Materials. D-9-2. 414-415 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition"Applied Physics Letters. Vol. 74, No. 3. 383-385 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T, Someya, and Y. Arakawa: "MOCVD Growth of Nanometer-scale InGaN Self-assembling Quantum Dots"IOP Conference Series. Vol. 162. 735-739 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel: "Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser"Applied Physics Letters. Vol. 75, No. 17. 2605-2607 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "MOCVD Growth and Optical Characterization of Stacked InGaN Quantum Dots for Laser Applications"Physica Status Solidi (a). Vol. 176. 629-633 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B. Shen, T. Someya, O. Moriwaki, and Y. Arakawa: "Effect of carrier confinement on photoluminescence from modulation-doped Al(x)Ga(x-1)N/GaN heterostructures"Applied Physics Letters. Vol. 76, No. 6. 679-681 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B. Shen, T. Someya, and Y. Arakawa: "Influence of strain relaxation of the Al(x)Ga(1-x)N barrier on transport properties of the two-dimensional electron gas in modulation-doped Al(x)Ga(1-x)N/GaN heterostructures"Applied Physics Letters. vol. 76, No. 19. 2746-2748 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Arakawa, T. Someya, and K. Tachibana (Invited): "Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers"IECE TRANS. ELECTRON.. Vol. E83-C, No. 4. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Arakawa, K. Okamoto: ""Advanced optical devices for next generation high-speed communication systems and photonic networds""IEICE Trans. Electron.. vol. E83-C. 787-788 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Toda, T. Sugimoto, M. Nishioka, and Y. Arakawa: "Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots"Aplied Physics Letters. Vol. 76, No. 26. 3887-3889 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, and Y. Arakawa: "Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD"1999 International Conference on Solid State Devices and Materials. D-9-2. 414-415 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition"Applied Physics Letters. Vol. 74, No. 3. 383-385 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "MOCVD Growth of Nanometer-scale InGaN Self-assembling Quantum Dots"IOP Conference Series. Vol. 162. 735-739 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel: "Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser"Applied Physics Letters. Vol. 75, No. 17. 2605-2607 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "MOCVD Growth and Optical Characterization of Stacked InGaN Quantum Dots for Laser Applications"Physica Status Solidi (a). Vol. 176. 629-633 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Hiroaki Watabe, Kaoru Arakawa, and Yasuhiko Arakawa: "A Nonlinear Digital Filter for Beautifying Facial Images"The Journal of Three Dimensional Images. vol. 13-no. 3. 41-46 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. C. Harris, S. Kako, T. Someya and Y. Arakawa: "Screening of the Polarization Field in InGaN Single Quantum Wells"Phys. Stat. Sol. (b). 216. 423 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. C. Harris, H. Brisset, T. Someya and Y. Arakawa: "Growth Condition Dependence of the Photoluminescence Properties of InxGal-xN/InyGal-yN Multiple Quantum Wells Grown by MOCVD"Jpn. J. Appl. Phys.. 38. 2613 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Toda, O. Moriwaki, M. Nishioka Y. Arakawa: "Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots, based on the existence of continuum states"Physical Review Letters. 82. 4114 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Toda, K. Suzuki, S. Shinomori, and Y. Arakawa: "Near-field spectroscopy of a single self-assembled InAs quantum dots: observation of energy relaxation process"Microelectronic Engineering. 47. 111-113 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Yamamoto, S. Inoue, M. Ozaki and N. Nishitani: "Distortion of the Outer Boundary of the Closed Region in the Tsyganenko Magnetic Field Model"Adv. Polar Upper Atomos. Res.. Vol. 13. 11-26 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Yamamoto, S. Inoue and M. Ozaki: "Latitudinal Structure of the Nightside Region 1 Field-Aligned Current Observed from the EXOS-D Satellite"Adv. Polar Upper Atmos. Res.. Vol. 13. 27-40 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, R.A. Hogg, and Y. Arakawa: "Stractual and Optical Properties of Type II Self-assembled GaSb/GaAs Quantum Dots Grown by Molecular Beam Epitaxy"Journal of Applied Physics. vol. 85. 8349-8352 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki and Y. Arakawa: "Growth of Stacked GaSb/GaAs Self-assembled Qunatum Dots by Molecular Beam Epitaxy"Journal of Crystal Growth. Vol. 201/202. 1205-1208 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, M.S. Minsky, S.B. Fleisher, R.A. Hogg, E.L. Hu, J.E. Bowers, and Y. Arakawa: "Radiative Lifetime of Spatially Indirect Exciton in Type-II GaSb/GaAs Self-assembled Quantum Dots"IOP Conference Series. Vol. 162. 475-480 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Kamata, J. M. Zariardi Ocampo, K. Hoshino, K. Yamada, M. Nishioka. T. Someya and Y. Arakawa: "Below-gap spectroscopy of semiconductor quantum wells by two-wavelength excited photoluminescence (TWEPL)"Recent Research Developments in Quantum (Transworld Research Network, India). Electronics, 1. 123-135 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Iwamoto, H. Kageshima, T. Yuasa, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda: "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells"Opt. Lett.. Vol. 24, No. 5. 321-323 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Saito and Y. Arakawa: "Atomic structure and phase stability of lnxGal-xN random alloys calculated using a valence-force-field method"Physical Review B. Vol. 60. 1701 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, Y. Arakawa: "Room Temperature Casing at Blue Wavelengths in Gallium Nitride Microcavities"Science. Vol. 285, No. 5435. 1905-1906 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Someya and Y. Arakawa: "Microphotoluminescence Intensity Images of InGaN Single Quantum Wells"Japanese Journal of Applied Physic. Vol. 38, No. 11A. L1216-L1218 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Someya, Y. Arakawa R.Werner and A. Forchel: "Growth and structural characterization of InGaN vertical cavity surface emitting lasers operating at room temperature"Physica Status Solidi. 176. 63-66 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B. Shen, T. Someya, M. Nishioka and Y. Arakawa: "Influence of AlxGal-xN Thickness on Transport Properties of Two Dimensional Electron Gas in Modulation Doped AlxGal-xN/GaN Single Heterostructures"Physica Status Solidi (b). 216, No. 1. 755-759 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, R. A. Hogg, S. Kako, Y. Arakawa M. S. Minsky, S. B. Fleischer, E. Hu, and J. E. Bowers: "Radiative lifetimes of spatially indirect excitons in type II GaSb/GaAs self-assembled quantum dots"Appl. Phys. Let.. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Hajime Nakayama, and Yasuhiko Arakawa: "Phonon bottleneck in quantum dots: Role of lifetime of the confined optical phonons"Physical Review B. 59. 5069-5073 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R. Cingolani, R. Rinaldi, H. Lipsanen, M. Sopanen, R. Virkkala, K. Maijala J. Tulkki. J. Ahopelto, K. Uchida, N. Miura, and Y. Arakawa: "Electron-Hole Correlation in Quantum Dots under a High Magnetic Field (up to 45 T)"Physical Review Letters -- December 6, 1999 --. Volume 83. 4832-4835 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Hajime Nakayama and Y. Arakawa: "Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck"Issue Jpn. J. Appl. Phys.. 38. 473 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li and Y. Arakawa: "Confined Optical Phonons in Semiconductor Quantum Dots"Solid State Commun.. 109. 351 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li, Hajime Nakayama and Y. Arakawa: "Phonon Decay and Its Impact on Carrier Relaxation in Semiconductor Quantum Dots"The Proceedings of the 24th International Conference on the Physics of Semiconductors (World Scientific, Singapore 1999). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li and Y. Arakawa: "Optical linewidths in an individual quantum dot"Phys. Rev. B.. V60.3. 1915 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. C. Harris, T. Someya, K. Hoshino, S. Kako and Y. Arakawa: "Photoluminescence of GaN Quantum Wells with AlGaN Barriers of Might Aluminium Content"Physica. stat. sol. (a). 180. 339 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.C. Harris, T. Someya, S. Kako, K. Hoshino, and Y. Arakawa: "Time-resolved photoluminescence of GaN/A10.5Ga0.5N quantum wells"Applied Physics Letters. Vol. 77, No. 7. 1005-1007 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Saito: "Electronic structure of (311)-InAs monolayers embedded in GaAs"Superlattices and Microstructures. 22. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Yamamoto, S. Inoue and M. Ozaki: "On the limitation of the current sheet approximation in estimation of the northward Bz associated field-aligned currents"J. Geophys. Res.. Vol. 105, No. A9. 21143-21157 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Hoshino, J.M. Zanardi Ocampo, N. Kamata, K. Yamada, M. Nishioka, Y. Arakawa: "Absence of nonradiative recombination centers in Modulation-doped quantum wells revealed by two-wavelength excited photoluminescence"Physica E. Vol. 7, No. 3-4. 563-566 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Toda, T. Sugimoto, M. Nishioka, and Y. Arakawa: "Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots"Appl. Phys. Lett.. Vol. 76, No. 26. 3887-3889 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Toda, and Y. Arakawa: "Near-field spectroscopy of a single InGaAs self-assembled quantum dots"IEEE Journal of Selected Topics in Quantum electronics. Vol. 6, No. 3. 528-533 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa: "Resonant Raman scattering of optical phonons in self-assembled quantum dots"Physica E. Vol. 8. 328-332 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, and Y. Arakawa: "Narrow photoluminescence peaks from localized states in InGaN quantum dot structures"Appl. Phys. Lett.. Vol. 76, No. 17. 2361-2363 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, R. Werner, A. Forchel, and Y. Arakawa: "MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature"Physica E. vol. 7, No. 3-4. 944-948 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa: "Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature"Appl. Phys. Lett.. Vol. 76, No. 22. 3212-3214 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "Growth of InGaN self-assembled quantum dots and their application to lasers"IEEE J. Selected Topics in Quantum Electronics. Vol. 6, No. 3. 475-481 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa: "Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images"J. Crystal Growth. Vol. 221. 576-580 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa: "High-density InGaN quantum dots fabricated by selective MOCVD growth"IPAP Conference Series 1. 417-420 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, and Y. Arakawa: "Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD"Jpn. J. of Appl. Phys.. vol. 39, part 1, No. 4B. 2344-2346 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. Tatebayashi, M. Nishioka, T. Someya, and Y. Arakawa: "Area-controlled growth of InAs Quantum_dots and improvement of density and size distribution"Appl. Phys. Lett.. Vol. 77, No. 21. 3382-3384 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Someya, K. Hoshino, J. C. Harris, K. Tchibana, and Y. Arakawa: "Photoluminescence from sub-monolayer-thick GaN/AlGaN quantum wells"Applied Physics Letters. Vol. 77, No. 9. 1336-1338 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Someya, K. Hoshino, J. C. Harris, K. Tachibana, S. Kako, and Y. Arakawa: "Emission at 247 nm from GaN quantum wells grown by MOCVD"Material Research Society Symposium Proceedings. Vol. 595. W12.8.1-W12.8.5 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Hiroaki Watabe, Kaoru Arakawa, and Yasuhiko Arakawa: "Nonlinear Inverse Filter Using ε-Filter and Its Applications to Image Restoration"IEICE Trans.Fundamentals. vol. E83-A, no. 2. 283-290 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. M. Z. Ocampo, N. Kamata, K.Hoshino, M. Hirasawa, K. Yamada, M. Nishioka, and Y. Arakawa: "Spectroscopic discrimination of nonradiative centers in quantum wells by two-wavelength excited photoluminescence"J. Grystal Growth. Vol. 210. 238-241 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. M. Z. Ocampo, N. Kamata, K.Hoshino, K. Endoh, K. Yamada, M. Nishioka, T. Someya, and Y. Arakawa: "Spectroscopy of nonradiative recombination centers in quantum wells by two-wavelength excited photoluminescence"J. Lumin.. Vol. 87-89. 363-365 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Z.W. Zheng, B. Shen, R. Zhang, Y.S. Gui, C.P. Jiang, Z.X. Ma, S.L. Giuo, Y. Shi, T. Someya, and Y. Arakawa: "Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlGaN/GaN heterostructures"Phys. Rev. B. 62. R7739-7745 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R. Cingolani, M. De Giorgi, R. Rinaldi, H. Lipsanen, M. Sopanen, K. Uchida, N. Miura, and Y. Arakawa: "Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)"Physica E. vol. 7, No. 3-4. 346-349 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Ph. Lelong, K. Suzuki, G. Bastard, H. Sakaki, and Y. Arakawa: "Enhancement of the Coulomb correlations in typeII quantum dots"Physica E. vol. 7, No. 3-4. 393-397 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B. Shen, T. Someya, O. Moriwaki, and Y. Arakawa: "Photoluminescence from two-dimensional electron gas in modulation-doped AlGaN/GaN heterostructures"Physica E. vol. 7, No. 3-4. 939-943 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Xin-Qi Li and Y. Arakawa: "Single qubit from two coupled quantum dots: An approach to semiconductor quantum computations"Phys. Rev. A. Vol. 6301. 2302 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Arakawa (Invited): "Progress in GaN-based Quantum Dots and Heterostructures"International Workshop on Novel Gain Materials, Wueraburug. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Arakawa, T. Someya, and K. Tachibana: "Progress in Growth and Physics of Nitride-Based Quantum Dots (Editor's Choice)"Phys. Stat. Sol (B). 224. 1-11 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki and Y. Arakawa: "Near 1.3mm Emission at Room Temperature from InAsS/GaAs Self-Assembled Quantum Dots on GaAs Substrates"phys. stat. sol. (b). 224. 139-142 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Arakawa, T. Someya, and K. Tachibana: "Progress in Growth and Physics of Nitride-Based Quantum Dots"phys. Sta. Sol. (b). 224. 1-11 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R. Rinaldi, M. De Vittorio, R. Cingolani, U. Hohenester, E. Molinari, H. Lipsane, J. Tulkki, J. Ahopelto, K. Uchida, N. Miura, and Y. Arakawa: "Correlation Effects in Strain-Induced Quantum Dots"phys. Sta. Sol. (b). 224. 1-11 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Suzuki, M. S. Minsky, S. B. Fleisher, R. A. Hogg, E. L. Hu, J. E. Bowers, and Y. Arakawa: "Radiative Lifetime of Spatially Indirect Exciton in Type-II GaSb/GaAs Self-assembled Quantum Dots"(To be published) IOP Publishing Co.. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Toda,T.Sugimoto,M.Nishioka,and Y.Arakawa: "Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots"Appl.Phys.Lett.. Vol.76,No.26. 3887-3889 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Toda,and Y.Arakawa: "Near-field spectroscopy of a single InGaAs self-assembled quantum dots"IEEE Journal of Selected Topics in Quantum electronics. Vol.6 No.3. 528-533 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Toda,O.Moriwaki,M.Nishika,and Y.Arakawa: "Resonant Raman scattering of optical phonons in self-assembled quantum dots"Physica E. Vol.8. 328-332 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] O.Moriwaki,T.Someya,K.Tachibana,S.Ishida,Y.Arakawa: "Narrow photoluminescence peaks from localized states in InGaN quantum dot structures"Appl.Phys.Lett.. Vol.76,No.17. 2361-2363 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Tachibana,T.Someya,R.Werner,A.Forchel,Y.Arakawa: "MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature"Physica E. Vol.7,No.3-4. 944-948 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Tachibana,T.Someya,S.Ishida,and Y.Arakawa: "Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature"Appl.Phys.Lett.. Vol.76,No.22. 3212-3214 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Tachibana,T.Someya,and Y.Arakawa: "Growth of InGaN self-assembled quantum dots and their application to lasers"IEEE J.Selected Topics in Quantum Electronics. Vol.6,No.3. 475-481 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Tachibana,T.Someya,S.Ishida,and Y.Arakawa: "Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images"J.Crystal Growth. Vol.221. 576-580 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K. Tachibana, T. Someya,and Y. Arakawa: "Nonometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition"Applied Physics Letters. 74. 383-385 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel: "Room-temperature lasing oscillatation in an InGaN self-assembled quantum dot laser"Applied Physics Letters. 75. 2605-2607 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K. Tachibana, T. Someya, and Y. Arakawa: "MOCVD Growth and Optical Characterization of Stacked InGaN Quantum Dots for Laser Applications"Physica Status Solidi (a). 176. 629-633 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] J. C. Harris, S. Kako, T. Someya, and Y. Arakawa: "Screening of the Polarization Field in InGaN Single Quantum Wells"Phys. Stat. Sol. (b). 216. 423 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] J. C. Harris, H. Brisset, T. Someya, and Y. Arakawa: "Growth Condition Dependence of the Photoluminescence Properties of InxGal-xN/InyGal-yN Multiple Quantum Wells Grown by MOCVD"Jpn. J. Appl. Phys.. 38. 2613 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y. Toda, O. Moriwaki, M. Nishioka, Y. Arakawa: "Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots. Based on the existence of continuum states."Physical Review Letters. 82. 4114 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 橘浩一, 染谷隆夫, 荒川泰彦: "GaN上へのInGaN量子ドットの自然形成" 電子情報通信学会論文誌. Vol.J81-C-I No.8. 474-475 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Yamanaka, K.Suzuki, S.Ishida, and Y.Arakawa: "Light Emission from Individual Self-assembled InAs/GaAs Quantum Dots Excited by Tunneling" Current injection", Appl.phys.Lett.Vol.73,No.11. 1460-1462 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Saito, J.N.Schulman, ^* and Y.Arakawa: "Strain-energy Distribution and elctronic structure of InAs Pyramidal Quantum Dots with Uncovered Surfaces : Tight-binding Analysis" Phys.Rev.B.Vol.57. 13016-13019 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Toda, S.Shinomori. K.Suzuki, and Y.Arakawa: "Near-field Magneto-optical Spectroscopy of Single Self-assembled InAs Quantum Dots" Appl.Phys.Lett.Vol.73,No.4. 517-519 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Toda, S.Shinomori. K.Suzuki,and Y.Arakawa: "Polarized Photoluminescence Spectroscopy of Single Self-assembled InAs Quantum Dots" Phys.Rev.B.Vol.58,No.16. (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Xin-Qi Li and Yasuhiko Arakawa: "Anharmonic Decay of Confined Optical Phonons in Quantum Dots" Phys.Rev.B.Vol.57. 12285-12290 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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