Project/Area Number |
10650019
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Nihon University |
Principal Investigator |
SUGAWARA Katsuro Nihon-University, College of Engineering, Professor, 工学部, 教授 (60256815)
|
Project Period (FY) |
1998 – 2000
|
Project Status |
Completed (Fiscal Year 2000)
|
Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2000: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1999: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1998: ¥1,000,000 (Direct Cost: ¥1,000,000)
|
Keywords | silicon single crystal / reaction between Si melt and quartz crucible / convection in Si melt / SiO evaporation / oxygen segregation / finite difference method / finite element method / fraction solidified |
Research Abstract |
1. Research target : computer simulation of radial oxygen distribution in Si Czochralski-grown single crystal to improve its uniformity. 2. Research main result (1) Research principle : we simulate a radial oxygen distribution taking a series of processes, incorporation of oxygen originated by reaction Si melt and high purity quartz crucible- convective diffusion of oxygen in Si melt-SiO evaporation through Si melt free surface-oxygen segregation into Si single crystal, into consideration and find the simulation condition to explain the measured distribution. (2) Finite difference analysis for simplified model : we simulated the radial oxygen distribution for the simplified melt shape of a rectangular cross section and the simulation results could explain the measured oxygen concentration profile. (3) Finite element analysis for actual, complex model : we simulated the radial oxygen distribution for the actual, curved growing interface model and the simulation results agreed with the measured oxygen concentration profile by no difference. (4) Finite difference analysis of dopant concentration profile for simplified model : we simulated the radial phosphorus distribution for the simplified melt shape of a rectangular cross section, and the simulation results could explain the measured dopant concentration profile, especially more uniform distribution when we added PH_3 through Si melt free surface in addition the conventional doping in the melt. (5) 3D computer graphics of Si single crystal lattice image and Si crystal defect image : we visualized 3D computer graphics of Si single crystal lattice image and Si crystal defect image such as COP-crystal-originated particle-and these contents are very effective to understand VLSI devices structure of atomic scale.
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