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Modeling of Impurity Diffusion in SOI Substrates for Future LSIs

Research Project

Project/Area Number10650334
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionNagoya Institute of Technology

Principal Investigator

ARAI Eisuke  Faculty of Engineering, Electrical and Computer Engineering, Prof., 工学部・電気情報工学科, 教授 (90283473)

Co-Investigator(Kenkyū-buntansha) UCHIDA Hideo  Faculty of Engineering, Electrical and Computer Engineering, Nagoya Institute of Technology Res.Associate, 工学部, 助手 (10293739)
SHAO Chunlin  Research Center for Micro-Structure Devices, Nagoya Institute of Technology Associate Prof., 極微構造デバイス研究センター, 助教授 (20242828)
ICHIMURA Masaya  Faculty of Engineering, Electrical and Computer Engineering, Nagoya Institute of Technology Associate Prof., 工学部, 助教授 (30203110)
YOSHIDA Masayuki  Yoshida Semiconductor Lab., Head, 所長 (80038984)
Project Period (FY) 1998 – 2000
Project Status Completed(Fiscal Year 2000)
Budget Amount *help
¥3,700,000 (Direct Cost : ¥3,700,000)
Fiscal Year 2000 : ¥800,000 (Direct Cost : ¥800,000)
Fiscal Year 1999 : ¥1,300,000 (Direct Cost : ¥1,300,000)
Fiscal Year 1998 : ¥1,600,000 (Direct Cost : ¥1,600,000)
Keywordssilicon LSI / ultra thin SOI / buried oxide / active layer / carrier concentration / spreading resistance / impurity diffusion / process simulation / プロセスシミュレータ / シリコン / SOI / シュミレーションモデル / 格子間Si / LSI / 低消費電力LSI / シミュレーションモデル / 埋込酸化膜
Research Abstract

To develop the ultra thin SOI substrates which is expected as ones for future LSIs with higher speed and lower power performance, we studied (i) the accurate measurement method of carrier concentration profiles in SOIs, and (ii) estimation of crystalline quality of SOIs, and extraction of modeling parameters of impurity diffusion in SOIs for process simulation. Results obtained are as follows :
(1) Carrier concentration profiles in SOIs were measured by spreading resistance method. For as-received p-and n-type SOI samples, there is a carrier-depleted (highly resistive ) layer near the interface of SOI and buried oxide. For samples annealed at high temperatures near 1000℃, the carrier-depleted layer changes to inversion layer for p-type SOIs and to accumulation layer for n-type SOIs. The changes with annealing can be explained by assuming the positive charge in buried oxide and the decrease of interface state density.
(2) Phosphorus and boron diffusion profiles in ultra thin SOIs involving SIMOX, UNIBOND and Eltran were compared with those in bulk substrates. The diffusion in such SOIs is retarded, compared with that in bulk substrates. Among ultra thin SOIs the diffusion in SIMOX is most retarded, compared with that in other SOIs. The diffusion retardation rate is considered to reflect the crystalline quality of buried oxide interface and SOI substrate. Furthermore, diffusion modeling parameters for process simulation were extracted from the measured profiles in SOI.

Report

(4results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • 1998 Annual Research Report

Research Products

(23results)

All Other

All Publications

  • [Publications] H.Uchida,M.Ichimura and E Arai: "Ultra shallow boron diffusion in SIMOX and UNIBOND structures"2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices. 285-289 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 市村,大橋,荒井: "拡がり抵抗測定により求めたSOI基板中のキャリア分布"信学技報(Tech.Report of IEICE). SDM99-3. 15-22 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 伊藤,内田,市村,荒井: "SOIウェーハ貼り合わせ界面付近のキャリア分布に及ぼすアニールの影響"信学技報(Tech.Report of IEICE). SDM2000-169. 15-21 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Bannno,I.Ichino,H.Uchida,M.Ichimura,E.Arai and M.Yoshida: "Surface concentration dependence of diffusion profile shape for phosphorus in Si"Proc.of 6th Int.Workshop on BAMS. (印刷中). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 荒井,内田,市村: "SIO層への不純物拡散と電気特性"応用物理学会結晶分科会第13回研究会テキスト. (印刷中). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Uchida, Y.Ieki, M.lchimura and E.Arai: "Retarded Diffusion of Phosphorus in Silicon-on-Insulator Substrates"Jpn.J.Appl.phys.. Vol.39. L137-L140 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Uchida, H.asai, Y.Ieki, M.Ichimura, C.Shao and E.Arai: "Effect of Oxidation Ambient on Phosphorus Diffusion in SOI"Extended Abstract of 1998 6tthInt. Workshop on Comp.Electron.. IWCE-6. 194-197 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Ieki, H.Asai, H.Uchida, M.Ichimura, C.Shao and E.Arai: ""Impurity Diffusion Profile Measurement in SOI and Diffusion Simulation" (in Japanese)"Tech.Report of IEICE.. SDM98-149. 17-23 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Uchida, M.Ichimura and E.Arai: ""Diffusion Simulation of Phosphorus and Boron in SOI Substrates" (in Japanese)"ibid.. SDM99-138. 79-84 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Asai, Y.Yoshikawa, Y.Ieki, H.Uchida, M.Ichimura and E.Arai: ""Comparison of Phosphorus and Boron Diffusion Profies in SOI and Bulk Substrates" (in Japanese)"ibid.. SDM99-168. 37-43 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Uchida, M.Ichimura and E.Arai: "Ultra shallow boron diffusion in SIMOX and UNIBOND structures"2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2000). 285-289

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Ichimura, T.Ohashi and E.Arai: "Carrier Profiles in SOI Substrates Measured by Spreading Resistance Method" (in Japanese)"The Report of IEICE. SDM99-3. 15-22 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Itoh, H.Uchida, M.Ichimura, and E.Arai: ""Annealing Characteristics of Carrier Profiles near Bonding Interface of SOI Substrates" (in Japanese)"ibid.. SDM2000-169. 15-21 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Banno, T.Icnino, H.Uchida, M.Ichimura, E.Arai and M.Yoshida: "Surface concentration dependence of diffusion profile shape for phosphorus in Si"Proceeding of 6^<th> Int.Workshop on BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] E.Arai, H.Uchida and M.Ichimura: "Impurity Diffusion in SOIs and Its Electrical Characteristics"Text of 13^<th> Subcommittee Meeting of Crystallographic Engineering in JSAP (2000.4.25). (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Uchida,M.Ichimura and E.Arai: "Ultra shallow boron diffusion in SIMOX and UNIBOND structures"2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices. 285-289 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 市村,大橋,荒井: "拡がり抵抗測定により求めたSOI基板中のキャリア分布"信学技報(Tech.Report of IEICE). SDM99-3. 15-22 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] 伊藤,内田,市村,荒井: "SOIウェーハ貼り合わせ界面付近のキャリア分布に及ぼすアニールの影響"信学技報(Tech.Report of IEICE). SDM2000-169. 15-21 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Uchida,Y.Ieki,M.Ichimura and E.Arai: "Retarded Diffusion of Phosphorus in Siticon-on-Insulator substrates"Jpn.J.Appl.Phys. Vol.39. L137-L140 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 浅井、吉川、家木、内田、市村、荒井: "SOIとバルクにおけるPとBの拡散プロファイルの比較検討"信学技法(Tech,Report of IEICE). SDM99-168. 37-43 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 内田、市村、荒井: "SOI基板へのリンとボロンの拡散シュミレーション"信学技法(Tech,Report of IEICE). SDM99-138. 79-84 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Uchida,H.Asai,Y.Ieki,M.Ichimura,C.Shao,E.Arai: "Effect of Oxidation Ambient on Phosphorus Diffusion in SOI" Extended Abstract of 1998 6th Int.Workshop on Comp.Electron.IWCE-6. 194-197 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 家木,浅井,内田,市村,邵,荒井: "SOI基板中での不純物分布測定と拡散シミュレーション" 信学技報(Tech.Report of IEICE). SDM98-149. 17-23 (1998)

    • Related Report
      1998 Annual Research Report

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Published : 1998-04-01   Modified : 2016-04-21  

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