| Project/Area Number |
11650029
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
SUN Yong Kyushu Institute of Technology, Assistant, 情報工学部, 助手 (60274560)
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| Co-Investigator(Kenkyū-buntansha) |
MIYASATO Tatsurou Kyushu Institute of Technology, Professor, 情報工学部, 教授 (90029900)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2000: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1999: ¥1,700,000 (Direct Cost: ¥1,700,000)
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| Keywords | Silicon carbide / Hydrogen plasma / Epitaxial growth / Low temperature / Silicon substrate / Impurity / Oxygen / Crystallinity / 3C-SiC薄膜 / スパッタリング / 不純物酸素 / ドーピング / 欠陥 / 成長メカニズム |
|---|
| Research Abstract |
We report the self-organized growth of 0D-, 1D- and 2D-nanoscale SiC structures (grains, whiskers, and flakes) by a hydrogen plasma sputtering technique in which a small amount of oxygen is added to the hydrogen feed gas. Selective growth of the different structure is controlled by the substrate temperature, whiskers below approximately 800℃, grains in the range 800-900℃, and flakes at higher temperature. In the case of the first, the additional O atoms bond to Si resulting in tetragonal SiO_2 microcrystals in the SiC films, which nucleate whisker growth electrostatically. When the substrate temperature is above 800℃ deposits of amorphous carbon break up the developing film into small grains. With further increase of temperature, the carbon deposits are increasingly graphitic due to preferential formation of sp^2 bonding due to the presence of oxygen, resulting in the growth of SiC flakes.
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