近接場チップ増強赤外分光法による半導体デバイスの局所領域応力分布評価に関する研究

• Project/Area Number: 11J09705
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 国内
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Research Fellow: 小瀬村 大亮 National Institute for Materials Science, 特別研究員(PD)
• Project Period (FY): 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 2011: ¥800,000 (Direct Cost: ¥800,000)