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Development of InGaAs QWR-VCSELs

Research Project

Project/Area Number 12355015
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

HIYAMIAZU Satoshi  Graduate School of Engineering Science, Osaka University, Professor, 基礎工学研究科, 教授 (50201728)

Co-Investigator(Kenkyū-buntansha) ISHIKAWA Hiroshi  Fujitsu Laboratories LTD., Opto-Electronics Research Division, Research Fellow, 基盤研究所, 主任研究員
KITADA Takahiro  Graduate School of Engineering Science, Osaka University, Research Associate, 基礎工学研究科, 助手 (90283738)
SHIMOMURA Satoshi  Graduate School of Engineering Science, Osaka University, Associate Professor, 基礎工学研究科, 助教授 (30201560)
OHTSUBO Koji  Fujitsu Laboratories LTD., Opto-Electronics Research Division, Researcher, 基盤研究所, 研究員
Project Period (FY) 2000 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥41,680,000 (Direct Cost: ¥36,700,000、Indirect Cost: ¥4,980,000)
Fiscal Year 2002: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2001: ¥15,470,000 (Direct Cost: ¥11,900,000、Indirect Cost: ¥3,570,000)
Fiscal Year 2000: ¥20,100,000 (Direct Cost: ¥20,100,000)
KeywordsInGaAs / High-index GaAs substrates / Self-organized quantum wire / MBE growth / QWR-VCSELs
Research Abstract

InGaAs quantum wire vertical cavity surface emitting lasers (QWR-VCSELs) with emitting wavelength of 0.85-μm have been developed. High-density and highly uniform self-organized InGaAs QWRs grown on (775)B GaAs substrates by molecular beam epitaxy (MBE) was used for an active region in the QWR-VCSELs. Polarization instability problem of VCSELs was resolved by the highly polarized photon emission from the QWRs of the (775)B InGaAs QWR-VCSELs.
InGaAs/GaAs heterostructures were grown on (nnl)A- and (nnl)B-oriented GaAs substrates by MBE in order to improve self-organized InGaAs QWR structures. It was found that highly uniform and high optical quality InGaAs QWRs can be formed on (221)A GaAs substrates. Full width at half maximum (FWHM) value of a photoluminescence (PL) peak at 12 K was only 5.8 meV, that is the smallest value reported for self-organized QWRs. The (221)A InGaAs QWR lasers oscillated at room temperature. The (775)B InGaAs QWR lasers also oscillated at room temperature with threshold current densities of 1.7-3.1 kA/cm^2 and lasing wavelengths of 830-860 nm. Furthermore, stacking of the (775)B InGaAs QWRs with the use of thin AlAs barrier layers was found to enhance the one-dimensionality and carrier confinement of the QWRs. The (775)B InGaAs stacked QWR lasers showed high characteristic temperature (T_0 = 243 K) in the temperature range of 20-80℃. InGaAs QWR-VCSEL structures were grown on the (775)B GaAs substrates. Distributed Bragg reflectors (DBRs) and λ-cavity were formed successfully on the (775)B GaAs substrates, quite similar to the case of conventional (100) GaAs substrates. The (775)B InGaAs QWR-VCSEL showed room temperature lasing action by optical pumping. The polarization direction of the light output from the (775)B QWR-VCSEL was parallel to the QWR direction, and the (775)B InGaAs QWR-VCSELs exhibited highly stable single polarization-mode operation.

Report

(4 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • 2000 Annual Research Report
  • Research Products

    (26 results)

All Other

All Publications (26 results)

  • [Publications] Y.Ohno: "Laser operation at room temperature of self-organized In_<0.1>Ga_<0.9>As/(GaAs)_6 (AlAs)_1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy"J. Vac. Sci. Technol.. B18(3). 1672-1674 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Nitta: "Highly uniform and high optical quality In_<0.22>Ga_<0.78>As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy"J. Vac. Sci. Technol.. B19(5). 1824-1827 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "Large anisotropy of electron mobilities in laterally modulated two-dimensional systems grown on the (775)B-oriented GaAs substrates by molecular beam epitaxy"Jpn. J. Appl. Phys.. 40 pt.2, 10A. L1058-L1060 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "Stacking effect of self-organized In_<0.15>Ga_<0.85>As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy"J. Crystal Growth. 227-228. 970-974 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "Room temperature lasing of quantum wire VCSELs by optical pumping grown on the (775)B GaAs substrates by MBE"PHYSICA E. 13. 892-895 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H.Kanamori: "Room temperature oscillation of self-organized In<0.2>Ga_<0.8>As/GaAs quantum wire lasers grown on (221)A GaAs substrates by molecular beam epitaxy"J. Vac. Sci. Technol.. B20(4). 1493-1495 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "High characteristic temperature (T_0=234K) of stacked In GaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy"J. Vac. Sci. Technol.. B20(3). 1270-1273 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "Laser operation at room temperature of self-organized In_<0.1>Ga_<0.9>As/(GaAs)_6 (AlAs)_1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy"J.Vac.Sci.Technol.. B18(3). 1672-1674 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Nitta: "Highly uniform and high optical quality In_<0.22>Ga_<0.73>As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy"J.Vac.Sci.Technol.. B19(5). 1824-1827 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "Large anisotropy of electron mobilities in laterally modulated two-dimensional systems grown on the (775)B-oriented GaAs substrates by molecular beam epitaxy"Jpn.J.Appl.Phys.. 40 pt.2, 10A. L1058-L1060 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "Stacking effect of self-organized In_<0.15>Ga_<0.35>As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy"J.Crystal Growth. 227-228. 970-974 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "Room temperature lasing of quantum wire VCSELs by optical pumping grown on the (775)B GaAs substrates by MBE"PHYSICA E. 13. 892-895 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H.Kanamori: "Room temperature oscillation of self-organized In_<0.2>Ga_<0.3>As/GaAs quantum wire lasers grown on (221)A GaAs substrates by molecular beam epitaxy"J.Vac.Sci.Technol.. B20(4). 1493-1495 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Ohno: "High characteristic temperature (T_0=234 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy"J.Vac.Sci.Technol.. B20(3). 1270-1273 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Tatsuoka: "Dissociation of AS4 molecules during molecular beam epitaxy of GaAsP on (nll)A and (nll)B GaAs substrates"J.Vac.Sci.Technol.. B20(1). 266-270 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Ohno: "High characteristic temperature (To=234K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy"J.Vac.Sci.Technol.. B20(3). 1270-1273 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Kanamori: "Room temperature oscillation of self-organized In_<0.2>Ga_<0.8>As/GaAs quantum wire lasers grown on(221)A GaAs substrates by molecular beam epitaxy"J.Vac.Sci.Technol.. B20(4). 1493-1495 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Kitada: "Single-particle relaxation times in a psueudomorphic In_<0.7>Ga_<0.3>As/In_<0.52> AS_<0.48>AS QW-HEMT structure with (411)A super-filat interfaces grown by MBE"PHYSICA E. 13. 657-662 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Ohno: "Room Temperature lasing quantum wire VCSELs by optical Pumping grown on the (775)B GaAs substrates by MBE"PHYSICA E. 13. 892-895 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Ohno: "Stacking effect of self-organized In_<0.15>Ga_<0.85>As quantum wires grown on (775)B-oriented CaAs substrates by molecular beam epitaxy"J. Crystal Growth. 227-228. 970-974 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Nitta: "Highly unigorm and high obpical quality In_<0.22>Ga_<0.78> AS/GaAS quantum wires grown on (221)a GaAs substrate by molecular beam epitasy"J. Vac, Sci. Teclnol.. B19(5). 1824-1827 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Ohno: "Large anisotropy of electron mobilities in laterally modulated two-dimensional systems grown on the (775)B-oriented GaAs substrates by molecular beam epitaxv"Jpn. J. Appl. Phys.. 40(Pt.2, 10A). L1058-L1060 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Shimomura: "Temperature dependence of photoluminescence in (221)A In 0.22 GaO. 78As/GaAs high density quantum wires"Proc. of 25th ICPS, Osaka, 2000. Pt.2. 1205-1206 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Ohno,T.Nitta,S.Shimomura,and S.Hiyamizu: "Stacking effect of self-organized In_<0.15>Ga_<0.85>As quantum wires grown on(775)B-oriented GaAs substrates by molecular beam epitaxy"Journal of Crystal Growth. (to be published).

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Shimomura,T.Nitta,Y.Ohno,T.Kitada,and S.Hiyamizu: "Temperature dependence of photoluminescence in (221)A In_<0.22>Ga_<0.78>As/GaAs high density quantum wires"Proceedings of 25th International Conference on the Physics of Semiconductors (ICPS),Osaka,2000 . (to be published).

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Nitta,Y.Ohno,S.Shimomura,and S.Hiyamizu: "Highly uniform and high optical quality In_<0.22>Ga_<0.78>As/GaAs quantum wires grown on (221)A GaAs substrate by MBE"Journal of Vacuum Science and Technology B. (to be published).

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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