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Theoretical analysis of lasing characteristics of stacked lnGaN quantum dot lasers from atomic scale

Research Project

Project/Area Number 12650004
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Tokyo

Principal Investigator

SAITO Toshio  University of Tokyo, CCR, Research associate, 国際・産学共同研究センター, 助手 (90170513)

Co-Investigator(Kenkyū-buntansha) ARAKAWA Yasuhiko  University of Tokyo, RCAST, Professor, 先端科学技術研究センター, 教授 (30134638)
Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 2001: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2000: ¥1,700,000 (Direct Cost: ¥1,700,000)
KeywordsGaN / lnGaN / quantum dot / electronic structure / fight-binding method / piezoelectric effect / Stark effect / wave function overlap
Research Abstract

We have analyzed the electronic structures of ln_<0.2>Ga_<0.8>N pyramidal quantum dots (QDs) in a GaN barrier layer using a polarization-potential dependent sp^3 tight-binding method. A valence-force-field method using the Keating potential was used for the strain and atom-position calculations. For the QD with the diameter 86.4 A, height of 20.8 A, and facet inclination angle of 30 degree, the maximum piezoelectric field is calculated to be1.64 MV/cm. The energy gap shows a red shift of 0.100 eV due to the quantum-confined Stark effect. The field causes a spatial separation of the electron and hole wave functions in the QD. The number of electron-hole pairs, which can screen the field totally, is estimated as a function of the diameter. We find that 13 electron-hole pairs are required for the complete field screening for the QD with the diameter 86.4 A. In experiments by Damilano et al., the photoluminescence peak energy, E_<PL>, of 2.71 eV (at room temperature) was measured for the MBE-grown In_<0.2>Ga_<0.8>N QDs with the similar QD size ; diameter = 100 A, heitht = 20 A. Eg = 2.706 eV for the pyramidal QD is in better agreement with the measured energy, E_<PL> = 2.71 eV, than Eg = 2.502 eV for the prismatic QD.

Report

(3 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] T.Saito: "Formation of InGaN Quantum Dots : MOCVD Growth and Electronic Structures"Memoirs of The Institute of Scientific and Industrial Research, Osaka Univ.. 57. 167-168 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Saito: "Quantum confined electronic states in In GaN dots embedded in GaN"Proc. of 27th Int. Symp. on Compound Semiconductors. 285-290 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Saito: "Effects of internal piezoelectric Field on electronic states of In GaN quantum dots grown on GaN"J. of Crystal Growth.. (in press). (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Saito: "Quantum-Contined Stark Effect in In GaN Pyramidal Dots Induced by the Piezoelectric Field"Proc. of 28th Int. Symp. on Compound Semiconductors. (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 斎藤敏夫: "GaN系量子ドット構造における分極電界と電子状態"電子情報通信学会技術研究報告. 101. 27-31 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Saito, T. Someya, K. Tachibana, S. Ishida, O. Moriwaki, and Y. Arakawa: ""Formation of InGaN Quantum Dots : NOCVD Growth and Electronic Structures," Proc. of 3rd SANKEN Int"Symp. on Advanced Nanoelectronics : Devices, Materials, and Computing, Osaka, Japan, (Memoirs of The Institute of Scientific and Industrial Research, Osaka, University, Special Issue. Vol. 57. 167 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Saito, and Y. Arakawa: ""Quantum confined electronic states in InGaN dots embedded in GaN : Tight-binding calculation," Proc. of 27th Int. Symp. on Compound Semiconductors, Monterey, California"IEEE. 00TH8498. 285 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Saito, and Y. Arakawa: ""Effects of internal piezoelectric field on electronic states of InGaN quantum dots grown on GaN,""J. of Crystal Growth. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Satio, and Y. Arakawa: ""Quantum-Confined Stark Effect in InGaN Pyramidal Dots Induced by the Piezoelectric Field," Proc. of 28th Int"Symp. on Compound Semiconductors, Tokyo, Japan. (in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Saito: "Effects of internal piezoelectric field on electronic states of InGaN quantum dots grown on GaN"J. of Crystal Growth.. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Saito: "Quantum-Confined Stark Effect in InGaN Pyramidal Dots Induced by the Piezoelectric Field"Proc. of 28th Int. Symp. on Compound Semiconductors, Tokyo, Japan, 2001.. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] 斎藤敏夫: "GaN系量子ドット構造における分極電界と電子状態"電子情報通信学会技術研究報告. Vol.101 No.618. 27-31 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Saito: "Quantum confined electronic states in InGaN dots embedded in GaN : Tight-binding calculation"Proc.of 27th Int.Symp.on Compound Semiconductors, Monterey, California, 2000. (in press). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Saito: "Electronic states of GaN-based quantum dots"Proc.of 5th Symp.on Atomic-Scale Surface and Interface Dynamics (Tokyo, Japan, March 1-2,2001).. 45-48 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Saito: "Electronic Structure of InCaN Quantum Dots in GaN : Atomic Scale Calculations"Extended Abstracts of 2000 Int.Conf.on Solid State Devices and Materials (Sendai, Japan, Aug.29-31, 2000). (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2016-04-21  

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