SURFACE DIFFUSIVITY MEASUREMENTS ON SILICON SURFACES AND THEIR SIMULATION
| Project/Area Number |
12650030
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Kyushu University |
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Principal Investigator |
WATANABE Fumiya Faculty of Engineering, Kyushu University Research Associate, 工学研究院, 講師 (30264063)
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| Co-Investigator(Kenkyū-buntansha) |
MOTOOKA Teruaki Faculty of Engineering, Kyushu University Professor, 工学研究院, 教授 (50219979)
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| Project Period (FY) |
2000 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2001: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2000: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | Field Emission / Silicon / Surface Diffusion / Ultar-fast Phenomena / Surface Dynamics / Ultra-fast phenomena |
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| Research Abstract |
Femtosecond Field Emission Camera (FFEC) has been built to observe field emission current from silicon tips with the fastest time resolution of 4ps/pixel. The total current density is too low for any meaningful surface dynamics measurements with this resolution. With an order of magnitude slower resolutions, oscillations in 1GHz range are observed. We have developed a new method of analysis based on random telegraph noise statistics to improve the FFEC's time resolution in some cases. The time between electron observations are collected and their distribution indeed show an oscillation of 〜 27 ps period which are impossible to be seen in regular scans. This time resolution is more than two orders of magnitudes improvement over the conventional one.
In addition, field emission current fluctuation measurements are carried out on silicon tips fabricated from single crystals with and without boron deposition. The self diffusion of silicon on a vicinal surface of (100) plane has the activation value of 〜1.8eV, while the boron covered surfaces have the activation energy of 〜0.2eV at T = 600-900 K. The activation energy of diffusion returns to the original value of 1.8 eV above 900K.
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Report
(3 results)
Research Products
(6 results)
