| Project/Area Number |
12650031
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Yokohama City University |
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Principal Investigator |
SHIGETA Yukichi Yokohama City University, Graduated School of Integrated Science, Professor, 総合理学研究科, 教授 (70106293)
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| Project Period (FY) |
2000 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2001: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2000: ¥2,700,000 (Direct Cost: ¥2,700,000)
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| Keywords | Reflection high-energy electron diffraction / Dynamic structure change / Surface Structure / in-situ observation / 反射型高速電子線回折 / その場測定 |
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| Research Abstract |
A goal of this study is a shortening in measurement time of reflection high-energy electron diffraction (RHEED) rocking curve and achieving high-speed measurement of RHEED rocking curve. To shorten the measurement time of rocking curve, we used a quasi one-dimensional convergent beam method instead of intensity measurements with varying glancing angle (θ), which takes about 20 sec. In 2000^<th>, we have confirmed that an accurate rocking curve can be obtained in 0.3 sec.
In 2001^<st>, we have applied the new method to a dynamic surface structure change When a highly Boron-doped Silicon is annealed, the B atoms are segregated from the bulk to the surface and the (111) surface shows the Si(111) 【square root】3×【square root】3-B structure. The surface structure has an interesting feature that the B atom sits on the S_5 site just below an adatom. The occupancy of the S_5 site depends on thermal treatments : After the flashing at 1200 ℃, the B atoms occupied about 70 % of S_5 sites on the surface ; and the occupancy reaches about 95 % after annealing at 950 ℃. Then we observed RHEED rocking curves from the flashed surface during annealing at 950 ℃ and we succeeded to observe the continuous change in the RHEED rocking with the surface segregation of B atom.
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