| Project/Area Number |
12650123
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
機械工作・生産工学
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
IWAO Miyamoto Faculty of industrial Science and Technology ,Department of Applied Electronics ,Professor, 基礎工学部, 教授 (10084477)
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| Co-Investigator(Kenkyū-buntansha) |
JUN Taniguchi Faculty of industrial Science and Technology ,Department of Applied Electronics ,Resarch Associate, 基礎工学部, 助手 (40318225)
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| Project Period (FY) |
2000 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2001: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2000: ¥1,700,000 (Direct Cost: ¥1,700,000)
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| Keywords | Diamond / Ion beam etching / Irradiation damage / Graphite / XPS / Oxygen gas / Argon gas / specific etching rate / FIB / SOG / ECR / RIE |
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| Research Abstract |
In this term, we have finished the trial manufacture offine finish diamond etching machine using electron and ion beam. The constitution of this machine is vacuum chamber, assist gas injection nozzle, sample holder, and ECR ion source, which can produce ion beam and electron beam because ofbipolar bias applied to extract grid. Using this machine, acceleration voltage dependence of specific etching rate of diamond with various ion etching methods such as ion beam etching (ME), reactive ion beam etching (REBE), ion beam assisted etching (D3AE) and reactive ion beam assisted etching (RIBAE) were examined. As the results, non-liner dependence was observed between acceleration voltage and specific etching rate. Furthermore, irradiation damage of various ion beam etching was examined with X-ray Photoelectron Spectroscopy (XPS). All of ion beam etching methods caused graphitic transition, however, we found RIBAE was damage less process.
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