直接接触法による環境半導体(β-FsSi_2)薄膜の作成技術の確立

• Project/Area Number: 12750030
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 表面界面物性
• Research Institution: Tokyo National College of Technology
• Principal Investigator: 大野 秀樹 東京工業高専, 助教授 (20300543)
• Project Period (FY): 2000
• Project Status: Completed (Fiscal Year 2000)
• Budget Amount: ¥1,300,000 (Direct Cost: ¥1,300,000); Fiscal Year 2000: ¥1,300,000 (Direct Cost: ¥1,300,000)