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Ge含有シリカガラスの光化学過程における遷移状態の解明

Research Project

Project/Area Number 12750598
Research Category

Grant-in-Aid for Encouragement of Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Inorganic materials/Physical properties
Research InstitutionKyoto University

Principal Investigator

高橋 雅英  京都大学, 化学研究所, 助手 (20288559)

Project Period (FY) 2000 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 2001: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2000: ¥1,700,000 (Direct Cost: ¥1,700,000)
Keywords光導波回路 / 光化学 / フォトリフラクティブ / グレーティング素子 / 波長多重 / 光通信 / シリカガラス / 紫外光レーザ / 光ファイバ / 色中心 / 欠陥 / Ge / Si
Research Abstract

光ファイバや平面型光導波回路に用いられるGe : SiO_2ガラスは基本的に酸素欠損型であり,酸素欠損型構造欠陥を内包している.ある種の酸素欠乏型欠陥は吸収端近傍に欠陥準位を導く.これらの欠陥種は強力な紫外光を入射することにより電子励起に基づく光化学反応を示すことが知られている.この光化学過程は光通信の重要なデバイスの一つであるファイバブラッググレーティング素子の形成に利用されている.しかしながら,多くの欠陥は構造モデルさえ特定されておらず,光化学過程の解明には至っていない.また,多くの欠陥準位が250nm付近に集中しており特定の光化学反応のみを選択的に励起し解明することは困難である.本研究では通常光化学反応を誘起する250nm付近の光源より長波長の近紫外光源を用いることにより特定の光化学反応のみを励起し,反応機構の解明および反応生成構造の解明を行った.
光吸収,電子スピン共鳴などの実験結果に加え非経験分子軌道計算の結果などを加味して考察することにより,従来は電子中心と考えられてきた欠陥が常磁性欠陥であること絵を実験的に証明した.さらに,当該常磁性欠陥の構造モデルを提案し,光化学過程に伴うマクロな物性の変化との相関を解明した.

Report

(2 results)
  • 2001 Annual Research Report
  • 2000 Annual Research Report

Research Products

(14 results)

All Other

All Publications

  • [Publications] Tokuda Y: "Vibrational dynamics of glassy SiS_2 on the basis of molecular orbital calculations"J. Non-Cryst. Solids. 282. 256-264 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Enkhtuvshin D: "Photoelectrochemical Properties of the Sol-Gel Derived Ti_<1-X>V_XThin Film Electrodes"J. Ceram. Soc. Jpn.. 109. 666-670 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Uchino T: "E'-Centers in Amorphous SiO_2 Revisited : A New Look at an Old Problem"Pys. Rev. Lett.. 86. 5522-5525 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takahashi M.: "Enhanced Photocurrent in Thin Film TiO_2 Electrodes Prepared by Sol-Gel Method"Thin Solid Films. 78. 2730-2732 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Uchino T: "Structure and Generation Mechanism of the Peroxy-Radical Defect in Amorphous Silica"Pys. Rev. Lett.. 86. 2730-2732 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Uchino T: "Structure and Generation Mechanism of the Peroxy-Radical Defect in Amorphous Silica"Pys. Rev. Lett.. 86. 4560-5463 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Uchino,T.: ""Structure, Energies, and Vibrational Properties of Silica Rings in SiO_2 Glass""Phys.Rev.B,. 61. 234-240 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Uchino,T.: ""Mechanism of Interconversion among Radiation-induced Defects in Amorphous Silicon Dioxide""Phys.Rev.Lett.. 86(9). 1777-1780 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Uchino,T.: ""Structure and Formation Mechanism of Ge E' Center from Divalent Defects in Ge-doped SiO_2 Glass""Phys.Rev.Lett.,. 84. 1475-78 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Uchino,T.: ""Structure and Vibrational Properties of Alkali Phosphate Glasses from Ab Initio Molecular Orbital Calculations""J.Non-Cryst.Solids. 263&264. 180-88 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Uchino,T.: ""Model of Oxygen-Deficiency-Related Defects in SiO_2 Glass","Phys.Rev.B. 62. 2983-86 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Uchino,T.: ""Structural Study on PbO-B_2O_3 Glasses by X-Ray Diffraction and ^<11>B MAS NMR Techniques""J.Am.Ceram.Soc.. 83. 2543-48 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Uchino,T.: ""Structure and Paramagnetic Properties of Defect Centers in Ge-Doped SiO_2 Glass : Localized and Delocalized Ge E' Centers""Phys.Rev.Lett.. 84. 15305-08 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Uchino,T.: ""Mechanism of Electron Trapping in Ge-Doped SiO_2 Glass""Phys.Rev.B. 62. 1475-78 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-03-31   Modified: 2016-04-21  

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