| Budget Amount *help |
¥38,220,000 (Direct Cost: ¥29,400,000、Indirect Cost: ¥8,820,000)
Fiscal Year 2004: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2003: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2002: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2001: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
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| Research Abstract |
We have studied electronic and magnetic states in strongly correlated two-dimensional systems formed in Si-MOSFETs, Si/SiGe heterostructures, and p-GaAs/AlGaAs heterostructures.
1)We have developed a rotatory sample stage used in a dilution refrigerator.
2)We observed a metallic behavior even for the completely spin polarized state in a Si/SiGe sample. We proposed a phase diagram for the condition of the metallic phase on the plane of disorder vs internal degree of freedom.
3)We found that the ground state in the insulating phase of a Si-MOSFET is not ferromagnetic.
4)Magnetotransport in the insulating phase has been measured for n-Si,n-GaAs and p-GaAs samples. The results indicate that giant resistivity oscillations can be observed for strongly correlated systems.
5)We observed a giant positive magnetoresistance in the insulating phase ofa 2D hole system.
6)We have performed cyclotron resonance and electron spin resonance measurements for a Si/SiGe sample.
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