| Project/Area Number |
13440102
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
固体物性Ⅱ(磁性・金属・低温)
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
TANDA Satoshi Hokkaido Univ., Grad.School of Eng., Asso.Prof., 大学院・工学研究科, 助教授 (80217215)
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| Co-Investigator(Kenkyū-buntansha) |
UJI Shinya National Institution for Material Science, Chief Director, ナノマテリアル研究所, 主席研究員 (80344430)
HATAKENAKA Noriyuki NTT Basic Research Labo., Chief Director, 主任研究員
OKAJIMA Yoshitosyi Asahikawa National College of Technology, Asso.Prof., 助教授 (00213934)
AKERA Hiroshi Hokkaido Univ., Grad.School of Eng., Prof., 大学院・工学研究科, 教授 (20184129)
YAMAYA Kazuhiko Hokkaido Univ., Grad.School of Eng., Prof., 大学院・工学研究科, 教授 (80002054)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥12,900,000 (Direct Cost: ¥12,900,000)
Fiscal Year 2002: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 2001: ¥7,700,000 (Direct Cost: ¥7,700,000)
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| Keywords | CWD / topological matter / Ring Crystals / superconductor / NbSe2 / NbSe3 / Mobius Crystals / Topology / NbSe_2 / NbSe_3 |
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| Research Abstract |
We have investigated new nanosize structures of a metal-dichalcogenide compound, NbSe2. Nano-crystals are characterized by scanning-and transmission electron microscopy, energy dispersive x-ray spectroscopy, and electron diffraction. We discovered evidence of the existence of NbSe2 nanotubes and nanofibers, both of which are stable crystalline systems and can be synthesized reproducibly in a nearly equilibrium reacting process. We also measured electrical resistence of the nanofibers with conductive atomic force microscopy and demonstrated that the material show metallic behavior at room temperature. Though low temperature behavior has not been revealed, the NbSe2 nanotubes may opened up the possibility of nanotube family exhibiting macroscopic quantum states such as charge density wave and superconductivity, in addition to normal metal or semiconductor (carbon nanotube) and insulator (BN and MoS2 nanotubes).
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