| Project/Area Number |
13450125
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Research Institute of Electronics, Shizuoka University |
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Principal Investigator |
NAKANISHI Yoichiro Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 教授 (00022137)
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| Co-Investigator(Kenkyū-buntansha) |
AOKI Toru Shizuoka University, Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (10283350)
KOMINAMI Hiroko Shizuoka University, Research Institute of Electronics, Research Associate, 電子工学研究所, 助手 (60313938)
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| Project Period (FY) |
2001 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥14,600,000 (Direct Cost: ¥14,600,000)
Fiscal Year 2004: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2003: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2002: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 2001: ¥5,900,000 (Direct Cost: ¥5,900,000)
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| Keywords | ZnO / Zn_<1-x>Mg_xO / Si / epitaxial growth / exciton / near ultra violet ray / LED / PL / Zn_<1-x>Mg_XS / ZnS |
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| Research Abstract |
This study has been carried out aiming to form light emitting devices with nrsr ultra violet laser emission using ZnO epitaxial thin films grown on Si substrates by new method developed in this study. New results obtained in this study are described below.
*Formation of ZnO epitaxial thin films on Si(111) substrates
The epitaxial ZnO thin film which, shows dominantly the exciton emission could be formed successfully for the first time by oxidation of an epitaxial ZnS film on the Si(111) substrate in oxygen atmosphere, although the formation of the epitaxigl thin films of oxides on Si substrates has been very difficult so far.
*Band gap control of by formation of Zn_<1-x>Mg_xO solid-solution epitaxial thin films on Si(111) substrates
Zn_<1-x>Mg_xO solid-soution thin films could be formed successfully on Si substrates by the oxidation of Zn_<1-x>Mg_xS epitaxial films deposited by electron beam evaporation using pellets mixed with ZnS and MgS as an evaporation source. It was confirmed that peak energy of the exciton emission was shifted from 3.34 eV of ZnO to 3.45 eV of Zn_<0.85>Mg_<0.1>5O.
*Conduction control of Zn_<1-x>Mg_xO epitaxial thin films on Si(111) Substrates
In this study, laser doping method which does not need high temperature annealing was tried. The formation of n-type ZnO and Zn_<1-x>Mg_xO thin films could be done using Al or Ga as dopant by the irradiation of KrF excimer laser. The p-type formation using Sb could be confirmed, but high conductivity was not obtained. It was shown in this study that the formation of ZnO light emission device with near ultra-violet emission can be expected.
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