Grant-in-Aid for Scientific Research (B)
|Allocation Type||Single-year Grants |
Electronic materials/Electric materials
|Research Institution||Ritsumeikan University |
NANISHI Yasushi RITSUMEIKAN UNIVERSITY, COLLEGE OF SCIENCE & ENGINEERING, PROFESSOR, 理工学部, 教授 (40268157)
TAKAKURA Hideyuki RITSUMEIKAN UNIVERSITY, COLLEGE OF SCIENCE & ENGINEERING, PROFESSOR, 理工学部, 教授 (30112022)
IMAI Shigeru RITSUMEIKAN UNIVERSITY, COLLEGE OF SCIENCE & ENGINEERING, PROFESSOR, 理工学部, 教授 (40223309)
ARAKI Tsutomu RITSUMEIKAN UNIVERSITY, COLLEGE OF SCIENCE & ENGINEERING, ASSISTANT PROFESSOR, 理工学部, 講師 (20312126)
SUZUKI Akira RITSUMEIKAN UNIVERSITY, RESEARCH ORGANIZATION OF SCIENCE & ENGINEERING, PROFESSOR, 総合理工学研究機構, 教授 (10111931)
HARIMA Hiroshi KYOTO INSTITUTE OF TECHNOLOGY, DEPARTMENT OF ELECTRONICS AND INFORMATION, PROFESSOR, 電子情報工学科, 教授 (00107351)
寺口 信明 シャープ(株), 技術本部基盤技術研究所, 係長
鈴木 章 シャープ(株), 技術本部基盤技術研究所, 技師長
|Project Period (FY)
2001 – 2004
Completed (Fiscal Year 2004)
|Budget Amount *help
¥12,800,000 (Direct Cost: ¥12,800,000)
Fiscal Year 2004: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 2003: ¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 2002: ¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 2001: ¥3,300,000 (Direct Cost: ¥3,300,000)
|Keywords||InN / RF-MBE / InGaN / HFET / bandqap / heterostructure / quantum well / crystal growth / InN / InGaN / 臨界膜厚 / InAlN / 量子井戸構造 / 貫通転位 / バンドギャツプ / 極性 / Si基板 / AlNバッファ / ヘテロ接合 / モンテカルロシミュレーション / 最大ドリフト速度 / 窒化 / 低温中間層 / AlGaN / GaN / 二次元電子ガス / Full Band Monte Carlo Simulation|
In this research project, our aim is to develop fundamental technologies for fabrication of HFET based on InN, GaN and their alloys. We have studied the crystal growth of high quality InN and InGaN using plasma-excited molecular beam epitaxy and the fabrication of heterostructure based on these materials. Principal results obtained in this project are summarized as follows ;
1. For the InN growth on sapphire by RF-MBE, single crystalline InN with high quality crystalliniy and excellent electrical properties were successfully grown by optimizing growth condition such as nitridation, low-temperature grown buffer layer, growth temperature etc.
2. Based on systematic studies on structural and optical characterizations using TEM, XRD, Raman scattering, EXAFS, PL and optical absorption, true bandgap energy of InN with ideal wurtzite structure is found to be approximately 0.65 eV.
3. Single-crystalline InN was successfully grown on Si by introducing brief nitridation and AIN buffer.
4. High quality In-rich InGaN without phase separation was obtained by using low-temperature grown InN buffer. It was also found that insertion of the InN template was very effective in improving the crystalline quality and surface morphology of In-rich InGaN.
5. InN/InGaN quantum well structures were successfully fabricated on the InN template grown on sapphire, and PL emissions from the InN well layers were observed for the first time.
6. Influences of thermal oxidation of InN on the chemical properties of InN surface and structural and optical properties were studied. The oxidation of InN was confirmed to promote the formation of In_2O_3, which had a remarkable influence on optical properties of the InN.
7. Monte Carlo simulation of electrical properties of InN with narrow bandgap showed that InN has higher mobility and saturation velocity than GaN, indication excellent potential for HFET application.