Study of ferromagnetic multiple-tunnel-junction devices
| Project/Area Number |
13450132
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Hokkaido University |
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Principal Investigator |
YAMAMOTO Masafumi Hokkaido Univ., Grad. School of Eng., Prof., 大学院・工学研究科, 教授 (10322835)
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| Co-Investigator(Kenkyū-buntansha) |
UEMURA Tetsuya Hokkaido Univ., Grad. School of Eng., Asso. Prof., 大学院・工学研究科, 助教授 (20344476)
AMEMIYA Yoshihito Hokkaido Univ., Grad. School of Eng., Prof., 大学院・工学研究科, 教授 (80250489)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥15,400,000 (Direct Cost: ¥15,400,000)
Fiscal Year 2002: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2001: ¥13,400,000 (Direct Cost: ¥13,400,000)
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| Keywords | Ferromagnetic multiple-tunnel-junction / MRAM / Tunnel magnetoresistance device / Spin resonant-tunneling phenomena / 共鳴トンネル現象 |
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| Research Abstract |
Novel devices based on the concept of utilizing spin dependent resonant tunneling phenomena were investigated. The device characteristics of a resonant tunneling magnetic random access memory (MRAM) using a ferromagnetic triple-barrier structure in which both of two quantum wells are composed of ferromagnetic metals were analyzed. Calculations showed that the resonant tunneling memory consisting of a ferromagnetic triple-barrier structure could provide an exceedingly high reading current ratio for "1" and "0" of an order of 10^4%. This property is highly promising for nonvolatile ultrahigh-density spin-memory. Furthermore, we proposed and analysed a resonant tunneling spin filter, which is one of key devices for emerging spintronics, consisting of a ferromagnetic GaMnAs-based quantum well (QW) and a non-magnetic GaAs QW. Detailed calculations showed that it could produce high spin-polarized currents with polarizations exceeding 98 %.
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Report
(3 results)
Research Products
(9 results)
